Growth and Characterization of Epitaxial GaAs on Ge/Si Substrates

1983 ◽  
Vol 25 ◽  
Author(s):  
Robert M. Fletcher ◽  
D. Ken Wagner ◽  
Joseph M. Ballantyne
Keyword(s):  
Electron Beam ◽  
Electrical Properties ◽  
Vapor Phase ◽  
Electron Beam Evaporation ◽  
Organometallic Vapor Phase Epitaxy ◽  
Si Substrate ◽  
Epitaxial Gaas ◽  
Si Substrates ◽  
Structural And Electrical Properties

ABSTRACTEpitaxial GaAs layers have been grown on Ge-coated Si substrates. Deposition of epitaxial Ge was performed by electron beam evaporation onto a <100> Si substrate. GaAs was then deposited by organometallic vapor-phase epitaxy. Films grown over large areas (∼1 cm2) and by selective epitaxy in stripe patterns (∼50 μm wide) have been evaluated by a number of techniques to determine structural and electrical properties. In addition, we report what we believe to be the first LEDs fabricated in GaAs/Ge/Si heterostructures.

scholarly journals Structural and electrical properties of large area epitaxial VO2films grown by electron beam evaporation

2017 ◽  
Vol 121 (5) ◽  
pp. 055303 ◽  
Author(s):  
V. Théry ◽  
A. Boulle ◽  
A. Crunteanu ◽  
J. C. Orlianges ◽  
A. Beaumont ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electrical Properties ◽  
Electron Beam Evaporation ◽  
Large Area ◽  
Structural And Electrical Properties

Characterization of InP/GaAs epilayers grown on Si substrates by low‐pressure organometallic vapor phase epitaxy

1988 ◽  
Vol 52 (11) ◽  
pp. 880-882 ◽  
Author(s):  
M. K. Lee ◽  
D. S. Wuu ◽  
H. H. Tung ◽  
K. Y. Yu ◽  
K. C. Huang
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Si Substrates

Characterization of Gd[sub 2]O[sub 3] Films Deposited on Si(100) by Electron-Beam Evaporation

2001 ◽  
Vol 148 (2) ◽  
pp. G29 ◽  
Author(s):  
D. Landheer ◽  
J. A. Gupta ◽  
G. I. Sproule ◽  
J. P. McCaffrey ◽  
M. J. Graham ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Evaporation

scholarly journals Characterization of Gaas/Si/GaAs Heterointerfaces

1989 ◽  
Vol 148 ◽  
Author(s):  
Zuzanna Liliental-Weber ◽  
Raymond P. Mariella
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Defect Density ◽  
Si Substrate ◽  
Reverse Polarity ◽  
Si Substrates ◽  
Transmission Electron ◽  
Metal Semiconductor Metal

ABSTRACTTransmission electron microscopy of GaAs grown on Si for metal-semiconductor-metal photodetectors is presented in this paper. Two kinds of samples are compared: GaAs grown on a 15 Å Si epilayer grown on GaAs, and GaAs grown at low temperature (300°C) on Si substrates. It is shown that the GaAs epitaxial layer grown on thin Si layer has reverse polarity to the substrate (antiphase relation). Higher defect density is observed for GaAs grown on Si substrate. This higher defect density correlates with an increased device speed, but with reduced sensitivity.

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