Effect of deposition rate on structural and electrical properties of Al films deposited on glass by electron beam evaporation

ABSTRACTEpitaxial GaAs layers have been grown on Ge-coated Si substrates. Deposition of epitaxial Ge was performed by electron beam evaporation onto a <100> Si substrate. GaAs was then deposited by organometallic vapor-phase epitaxy. Films grown over large areas (∼1 cm2) and by selective epitaxy in stripe patterns (∼50 μm wide) have been evaluated by a number of techniques to determine structural and electrical properties. In addition, we report what we believe to be the first LEDs fabricated in GaAs/Ge/Si heterostructures.

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Low Temperature Deposited High Quality ITO Films Prepared by E-Beam Evaporation

MRS Proceedings ◽

10.1557/proc-187-147 ◽

1990 ◽

Vol 187 ◽

Author(s):

C. S. Chang ◽

J. C. Wang ◽

L. C. Kuo

Keyword(s):

Electron Beam ◽

Low Temperature ◽

Substrate Temperature ◽

Optimal Condition ◽

Deposition Rate ◽

Oxygen Pressure ◽

Electron Beam Evaporation ◽

Film Properties ◽

High Quality ◽

Ito Films

AbstractAn electron beam evaporation method has been used to prepare tin doped indium oxide (ITO) films with 95 wt.% In2O3 and 5 wt.% SnO2 in an oxygen atmosphere. It was found that the deposition rate and oxygen pressure strongly influence the film properties when the substrate temperature was lower than 200°C. In an optimal condition, highly transparent (transmittance ˜ 90% at wavelength 570 nm) and conductive (resistivity – 3×10−4Ω-cm) films of thickness around 2000 Å at substrate temperature as low as 180°C can be obtained.

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Electrical properties of aluminum oxide ceramics film on a metal

Perspektivnye Materialy ◽

10.30791/1028-978x-2021-2-59-65 ◽

2021 ◽

Vol 2 ◽

pp. 59-65

Author(s):

I. Yu. Bakeev ◽

◽

Yu. A. Burachevsky ◽

E. S. Dvilis ◽

D. B. Zolotukhin ◽

...

Keyword(s):

Electron Beam ◽

Electrical Properties ◽

Aluminum Oxide ◽

Relative Dielectric Constant ◽

Plasma Electron ◽

Electron Beam Evaporation ◽

Original Method ◽

Alumina Powder ◽

Oxide Ceramic ◽

Temperature Dependences

The work is devoted to the study of electrical properties (temperature dependences of conductivity, relative dielectric constant, dielectric loss tangent for various frequencies) of an aluminum oxide ceramic film deposited on a metal substrate. The film was created by the original method of electron beam evaporation of a non-conductive target, consisting of a compressed alumina powder, using a plasma electron source, which is able to reliably operate in the fore-vacuum pressure range (5 – 100 Pa). Such increased working gas pressures ensures the generation of a dense beam plasma near the target, which neutralizes the charging of a non-conducting target and thereby provides its effective melting and electron beam evaporation.

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Enhancement of the optical and electrical properties of ITO thin films deposited by electron beam evaporation technique

The European Physical Journal Applied Physics ◽

10.1051/epjap:2005044 ◽

2005 ◽

Vol 31 (2) ◽

pp. 87-93 ◽

Cited By ~ 44

Author(s):

H. M. Ali ◽

H. A. Mohamed ◽

S. H. Mohamed

Keyword(s):

Thin Films ◽

Electron Beam ◽

Electrical Properties ◽

Electron Beam Evaporation ◽

Optical And Electrical Properties ◽

Electron Beam Evaporation Technique ◽

Ito Thin Films ◽

Evaporation Technique

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Chemistry, microstructure, and electrical properties at interfaces between thin films of cobalt and alpha (6H) silicon carbide (0001)

Journal of Materials Research ◽

10.1557/jmr.1995.0026 ◽

1995 ◽

Vol 10 (1) ◽

pp. 26-33 ◽

Cited By ~ 32

Author(s):

L.M. Porter ◽

R.F. Davis ◽

J.S. Bow ◽

M.J. Kim ◽

R.W. Carpenter

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Transmission Electron Microscopy ◽

Electron Beam ◽

Electrical Properties ◽

Photoelectron Spectroscopy ◽

Electron Beam Evaporation ◽

Leakage Currents ◽

X Ray ◽

Transmission Electron

Thin films (4–1000 Å) of Co were deposited onto n-type 6H-SiC(0001) wafers by UHV electron beam evaporation. The chemistry, microstructure, and electrical properties were determined using x-ray photoelectron spectroscopy, high resolution transmission electron microscopy, and I-V and C-V measurements, respectively. The as-deposited contacts exhibited excellent rectifying behavior with low ideality factors and leakage currents of n < 1.06 and 2.0 × 10−8 A/cm2 at −10 V, respectively. During annealing at 1000 °C for 2 min, significant reaction occurred resulting in the formation of CoSi and graphite. These annealed contacts exhibited ohmic-like character, which is believed to be due to defects created in the interface region.

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