Effect of Interface and Surface on the Performance of a-Si:H TFTs

1992 ◽  
Vol 258 ◽  
Author(s):  
Jin Jang ◽  
Moon Youn Jung ◽  
Sun Sung Yoo ◽  
Hyon Kyun Song ◽  
Jung Mok Jun
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Buffer Layer ◽  
Thin Film Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Surface Oxidation ◽  
Gate Insulator ◽  
Rf Power ◽  
Electron Accumulation ◽  
Hydrogenated Amorphous

ABSTRACTWe have studied the effects of interface and surface on the performance of hydrogenated amorphous silicon(a-Si:H) thin film transistors. The effects of rf power, the buffer layer between the gate insulator and a-Si:H, and the surface oxidation on the performance on the a-Si:H TFTs have been investigated. By introducing suitable buffer layer, we can increase the mobility up to 2.1 cm2/Vs. The surface oxidation gives rise to the electron accumulation near the surface.

Effects of Top Insulator Overlap on the Stability in Hydrogenated Amorphous Silicon Thin Film Transistors

1994 ◽  
Vol 336 ◽  
Author(s):  
H.S. Choi ◽  
Y.S. Kim ◽  
S.K. Lee ◽  
J.K. Yoon ◽  
W.S. Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Charge Trapping ◽  
Channel Length ◽  
Gate Insulator ◽  
Silicon Thin Film ◽  
Bias Stress ◽  
Hydrogenated Amorphous

ABSTRACTThe effects of top-insulator on the instability problems of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) have been studied. In a-Si:H TFT with top-insulator (E/S type), charge trapping into the both of top-insulator and gate insulator has been shown under the bias stress.In order to investigate the charge trapping effects of top-insulator, we proposed a new method of Measurement. By this Method, we observed that trapped charges in top-insulator increased drain currents for positive gate bias stress, and this increment of drain currents was more serious with increasing the ratio of source/drain overlap length to channel length. It has founded that the instability problems of a-Si:H TFTs was attributed to the effects of top-insulator as well as that of gate insulator.

Performance of thin hydrogenated amorphous silicon thin‐film transistors

1991 ◽  
Vol 69 (4) ◽  
pp. 2339-2345 ◽  
Author(s):  
J. Kanicki ◽  
F. R. Libsch ◽  
J. Griffith ◽  
R. Polastre
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Thin Film ◽  
Hydrogenated Amorphous

Layout Dependence on Threshold Voltage Instability of Hydrogenated Amorphous Silicon Thin Film Transistors

2007 ◽  
Vol 46 (3B) ◽  
pp. 1318-1321 ◽  
Author(s):  
Huai-Yuan Tseng ◽  
Ko-Yu Chiang ◽  
Hau-Yan Lu ◽  
Chen-Pang Kung ◽  
Ting-Chang Chang
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Thin Film ◽  
Voltage Instability ◽  
Hydrogenated Amorphous
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