Layout Dependence on Threshold Voltage Instability of Hydrogenated Amorphous Silicon Thin Film Transistors

2007 ◽  
Vol 46 (3B) ◽  
pp. 1318-1321 ◽  
Author(s):  
Huai-Yuan Tseng ◽  
Ko-Yu Chiang ◽  
Hau-Yan Lu ◽  
Chen-Pang Kung ◽  
Ting-Chang Chang
1990 ◽  
Vol 192 ◽  
Author(s):  
M. Hack ◽  
W. B. Jackson ◽  
R. Lujan

ABSTRACTWe have developed a means to speed up the recovery of both the threshold voltage shift of hydrogenated amorphous silicon (a-Si:H) transistors and the Vx shift of high voltage a-Si devices. This is accomplished by placing a lightly doped compensated layer adjacent to the active layer in these transistors. This proximity recovery layer does not alter the initial characteristics of a-Si:H transistors and is completely process compatible with standard fabrication procedures.


1991 ◽  
Vol 69 (4) ◽  
pp. 2339-2345 ◽  
Author(s):  
J. Kanicki ◽  
F. R. Libsch ◽  
J. Griffith ◽  
R. Polastre

1995 ◽  
Vol 30 (9) ◽  
pp. 2254-2256 ◽  
Author(s):  
Bor -Yir Chen ◽  
Wei -Hsiung Wu ◽  
Jiann -Ruey Chen ◽  
Chum -Sam Hong

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