A Correlation between Si Surface Micro-Roughness and Atomic Concentration on Surface: Application to Micro-Roughness Measurement of Si

1992 ◽  
Vol 259 ◽  
Author(s):  
I. Oki ◽  
T. Biwa ◽  
J. Kudo ◽  
H. Shibayama

ABSTRACTWe have developed a new method of evaluating Si surface micro-roughness, by forming thin oxide in HCI/H2O2 solution and then measuring the concentration of chlorine atoms or the total charge in this oxide. It is shown that this oxide does not affect the surface micro-roughness, and the surface concentration of chlorine atoms incorporated in this oxide and the total oxide charge are proportional to the surface micro-roughness, as obtained by AFM. From these correlations, it is possible to evaluate the surface microroughness for large areas compared with the areas of AFM measurement.

1991 ◽  
Vol 46 (10) ◽  
pp. 1357-1363 ◽  
Author(s):  
Yüniu Bai ◽  
Mathias Noltemeyer ◽  
Herbert W. Roesky

A new method for the preparation of monoalkylamides of composition Cp′TiCl2NHR is reported. Me3SnNHR (R = tBu 1a, CHiPr2 1b) reacts with Cp′TiCl3 with elimination of Me3SnCl to yield Cp′TiCl2NHR (2) (2a: Cp′ = C5H5, R = tBu, 2b: Cp′ = Me3SiC5H4, R = tBu, 2c: Cp′ = (Me3Si)2C5H3, R = tBu, 2d: Cp′ = Me4C5H, R = tBu, 2e: Cp′ = Me5C5, R = tBu, 2f: Cp′ = C5H5, R = CHiPr2, 2g: Cp′ = Me3SiC5H4, R = CHiPr2, 2h: Cp′ = (Me3Si)2C5H3, R = CHiPr2, 2i: Cp′ = Me4C5H, R = CHiPr2, 2j: Cp′ = Me5C5, R = CHiPr2). Compounds 2a-2j are stable and eliminate HCl only in the presence of a strong base to form (C5H5TiClNtBu)2 (3a) or (Me3SiC5H4TiClNtBu)2 (3b) from 2a and 2b, respectively. In 3a the chlorine atoms are substituted by NHtBu groups in boiling THF by means of LiNHtBu to give (C5H5TiNHtBuNtBu)2 (4). The reactions of 2e and 2b with LiN(SiMe3)2·Et2O in the presence of pyridine yield Me5C5TiClNtBu · Py (5a) (Py = pyridine) and Me3SiC5H4TiClNtBu·Py (5b), respectively. Compounds 2e and 5a have been characterized by X-ray crystal structural analysis.


1995 ◽  
Vol 386 ◽  
Author(s):  
Heng-Chih Lin ◽  
J. P. Snyder ◽  
C. R. Helms

ABSTRACTNext generation ULSI devices will require ultra thin gate insulators where degradation due to contamination or surface microroughness is an even more important problem. Tunneling and breakdown characteristics are critical electrical testing methods, but unfortunately obtaining meaningful oxide integrity information on the one hand and tunneling IV's on the other is a tedious and time consuming process.In this research, we report on a new method to measure meaningful IV's, Qbd's, and Vbd's at the same time. This method uses a linear current ramp strategy where a voltage ramp to between 8–10 MV/cm is applied first followed by a linear current ramp until breakdown is reached. There are several advantages of this new method: The linear voltage ramp quickly and easily identifies low breakdown devices, whereas switching to a linear current ramp provides for nearly constant field stressing to obtain meaningful IV and Qbd


Author(s):  
C. C. Clawson ◽  
L. W. Anderson ◽  
R. A. Good

Investigations which require electron microscope examination of a few specific areas of non-homogeneous tissues make random sampling of small blocks an inefficient and unrewarding procedure. Therefore, several investigators have devised methods which allow obtaining sample blocks for electron microscopy from region of tissue previously identified by light microscopy of present here techniques which make possible: 1) sampling tissue for electron microscopy from selected areas previously identified by light microscopy of relatively large pieces of tissue; 2) dehydration and embedding large numbers of individually identified blocks while keeping each one separate; 3) a new method of maintaining specific orientation of blocks during embedding; 4) special light microscopic staining or fluorescent procedures and electron microscopy on immediately adjacent small areas of tissue.


1960 ◽  
Vol 23 ◽  
pp. 227-232 ◽  
Author(s):  
P WEST ◽  
G LYLES
Keyword(s):  

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