A new method for fixed oxide charge determination using a dual-gate MOS capacitor

ABSTRACTWe have developed a new method of evaluating Si surface micro-roughness, by forming thin oxide in HCI/H2O2 solution and then measuring the concentration of chlorine atoms or the total charge in this oxide. It is shown that this oxide does not affect the surface micro-roughness, and the surface concentration of chlorine atoms incorporated in this oxide and the total oxide charge are proportional to the surface micro-roughness, as obtained by AFM. From these correlations, it is possible to evaluate the surface microroughness for large areas compared with the areas of AFM measurement.

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A new method for charge determination of heavy, cosmic ray particles

Nuclear Instruments and Methods ◽

10.1016/0029-554x(68)90471-0 ◽

1968 ◽

Vol 58 (2) ◽

pp. 241-244 ◽

Cited By ~ 23

Author(s):

E.V. Benton ◽

R.P. Henke

Keyword(s):

Cosmic Ray ◽

New Method ◽

Charge Determination

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Quantified Density of Active near Interface Oxide Traps in 4H-SiC MOS Capacitors

Materials Science Forum ◽

10.4028/www.scientific.net/msf.858.603 ◽

2016 ◽

Vol 858 ◽

pp. 603-606 ◽

Cited By ~ 7

Author(s):

Hamid Amini Moghadam ◽

Sima Dimitrijev ◽

Ji Sheng Han ◽

Amirhossein Aminbeidokhti ◽

Daniel Haasmann

Keyword(s):

Conduction Band ◽

Threshold Voltage ◽

Energy Levels ◽

New Method ◽

Mos Capacitors ◽

Mos Capacitor ◽

Voltage Instability ◽

Capacitance Voltage ◽

Oxide Traps

This paper presents a new method to quantify near interface oxide traps (NIOTs) that are responsible for threshold voltage instability of 4H-SiC MOSFETs. The method utilizes the shift observed in capacitance–voltage (C–V) curves of an N-type MOS capacitor. The results show that both shallow NIOTs with energy levels below the bottom of conduction band and NIOTs with energy levels above the bottom of the conduction band of SiC are responsible for the C–V shifts, and consequently, for the threshold voltage instabilities in MOSFETs. A higher density of NIOTs is measured at higher temperatures.

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The new method of topological charge determination of optical vortices in the interference field of the optical vortex interferometer

Optik ◽

10.1016/j.ijleo.2005.11.007 ◽

2006 ◽

Vol 117 (9) ◽

pp. 423-425 ◽

Cited By ~ 12

Author(s):

Ewa Frączek ◽

Wojciech Frączek ◽

Jan Masajada

Keyword(s):

Topological Charge ◽

Optical Vortex ◽

New Method ◽

Optical Vortices ◽

Interference Field ◽

Charge Determination

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A new method for analyzing boron penetration and gate depletion using dual-gate PMOSFETs for high performance G-bit DRAM design

ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153) ◽

10.1109/icmts.2001.928657 ◽

2002 ◽

Author(s):

N. Takaura ◽

R. Nagai ◽

H. Asakura ◽

S. Yamada ◽

S. Kimura

Keyword(s):

High Performance ◽

New Method ◽

Dual Gate ◽

Boron Penetration

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Quantitative oxide charge determination by photocurrent analysis

Microelectronics Reliability ◽

10.1016/j.microrel.2007.01.069 ◽

2007 ◽

Vol 47 (4-5) ◽

pp. 673-677 ◽

Cited By ~ 2

Author(s):

M. Rommel ◽

A.J. Bauer ◽

H. Ryssel

Keyword(s):

Oxide Charge ◽

Charge Determination

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Selective Sampling and Orientation of Non-Homogeneous Tissues

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100100238 ◽

1968 ◽

Vol 26 ◽

pp. 98-99

Author(s):

C. C. Clawson ◽

L. W. Anderson ◽

R. A. Good

Keyword(s):

Electron Microscopy ◽

Electron Microscope ◽

Light Microscopy ◽

Random Sampling ◽

New Method ◽

Microscope Examination ◽

Small Areas ◽

Selective Sampling ◽

Large Numbers ◽

Specific Orientation

Investigations which require electron microscope examination of a few specific areas of non-homogeneous tissues make random sampling of small blocks an inefficient and unrewarding procedure. Therefore, several investigators have devised methods which allow obtaining sample blocks for electron microscopy from region of tissue previously identified by light microscopy of present here techniques which make possible: 1) sampling tissue for electron microscopy from selected areas previously identified by light microscopy of relatively large pieces of tissue; 2) dehydration and embedding large numbers of individually identified blocks while keeping each one separate; 3) a new method of maintaining specific orientation of blocks during embedding; 4) special light microscopic staining or fluorescent procedures and electron microscopy on immediately adjacent small areas of tissue.

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