Photoluminescence and Photoacoüstic Spectroscopy of Si Single-and Multi-Step Ingot- and Wafer-Annealed GaAs Crystals

1992 ◽  
Vol 262 ◽  
Author(s):  
O. Ka ◽  
O. Oda ◽  
S. Shigetomi ◽  
T. Ikari ◽  
Y. Makita ◽  
...  
Keyword(s):  
Low Temperature ◽  
Photoacoustic Spectroscopy ◽  
Radiative Recombination ◽  
Room Temperature ◽  
Defect Density ◽  
Band Edge ◽  
Near Band Edge ◽  
Exciton Recombination ◽  
Additional Defect ◽  
Neutral Acceptor

ABSTRACTSI GaAs crystals submitted to single- or multi-step, ingot-or wafer-annealing are investigated using photoluminescence (PL) and photoacoustic spectroscopy (PA). The near-band-edge PL transitions are well resolved, with a neutral acceptor-bound exciton recombination displayed as a split doublet. The improvement induced by wafer-annealing is illustrated by the absence of additional defect-related transitions found after ingot-annealing. For the room temperature PA measurements, the intensity of a peak occuring at 1.39 eV is shown to lead to an estimation of the arsenic micro-defect density as evaluated by AB etching. The 1.39 eV PA band is also asserted to be the non-radiative recombination path of a 1.482 eV band found in the low-temperature PL spectra.

Light-Emitting Structures with Near-Band Edge Luminescence for Si Optoelectronics

2007 ◽  
Vol 131-133 ◽  
pp. 601-606
Author(s):  
N.A. Sobolev
Keyword(s):  
Radiative Recombination ◽  
Room Temperature ◽  
Record Values ◽  
Band Edge ◽  
Near Band Edge ◽  
Interband Transitions ◽  
Light Emitters ◽  
Dominant Mechanism ◽  
Light Emitting ◽  
Band Edge Luminescence

Single crystal Si, Si0.948Ge0.052 and Si0.66Ge0.34 diode as well as Ge transistor structures with high electroluminescence (EL) intensities in the region of interband transitions at room temperature were fabricated by different techniques and their luminescence properties were studies. The analysis of the experimental data shows that recombination involving excitons is the dominant mechanism of near-band edge radiative recombination in all the light-emitting structures at room temperature. Some of the structures are characterized by record values of EL intensity and/or external quantum efficiency, so they can be used as effective light emitters for Si optoelectronics.

scholarly journals Low temperature near band edge recombination dynamics in ZnO nanorods

2014 ◽  
Vol 116 (12) ◽  
pp. 123506 ◽  
Author(s):  
Z. N. Urgessa ◽  
J. R. Botha ◽  
M. O. Eriksson ◽  
C. M. Mbulanga ◽  
S. R. Dobson ◽  
...  
Keyword(s):  
Low Temperature ◽  
Zno Nanorods ◽  
Band Edge ◽  
Near Band Edge ◽  
Recombination Dynamics

Room-temperature spin glass and near band edge properties of highly disorder (FeCo)0.03Zn0.97O and (FeCoNi)0.03Zn0.97O nanorods

2010 ◽  
Vol 107 (4) ◽  
pp. 043902 ◽  
Author(s):  
Javed Iqbal ◽  
Xiaofang Liu ◽  
Naeem Ahmad ◽  
Takashi Harumoto ◽  
Dapeng Yu ◽  
...  
Keyword(s):  
Spin Glass ◽  
Room Temperature ◽  
Band Edge ◽  
Near Band Edge

scholarly journals Узкозонные гетероструктуры InAs-=SUB=-1-y-=/SUB=-Sb-=SUB=-y-=/SUB=-/InAsSbP (y=0.09-0.16) для спектрального диапазона 4-6 μm, полученные методом МОГФЭ

2019 ◽  
Vol 61 (10) ◽  
pp. 1746
Author(s):  
В.В. Романов ◽  
Э.В. Иванов ◽  
К.Д. Моисеев
Keyword(s):  
Solid Solution ◽  
Low Temperature ◽  
Active Layer ◽  
Radiative Recombination ◽  
Room Temperature ◽  
Composition Range ◽  
Narrow Gap ◽  
Spectral Maximum ◽  
Antimony Content ◽  
Metalorganic Compounds

AbstractAsymmetric n -InAs/InAs_(1 – _ y )Sb_ y / p -InAsSbP heterostructures with a narrow-gap active layer and a composition range y = 0.09–0.16 were grown by vapor phase epitaxy from metalorganic compounds. Room-temperature electroluminescence was observed at a wavelength of up to λ = 5.1 μm at a spectral maximum. The study of low-temperature electroluminescence spectra provided the possibility to establish the existence of two radiative recombination channels caused by the nature of the InAsSb/InAsSbP heterointerface. The effect produced by the chemistry of the active layer on the composition of the grown barrier layer and the formation of the InAsSb/InAsSbP heterojunction with an increase in the antimony content in the InAsSb solid solution was demonstrated.

Observation of Near Band Edge Transition in Aluminum Nitride Thin Film Grown by MOCVD

1996 ◽  
Vol 449 ◽  
Author(s):  
Xiao Tang ◽  
Fazla R. B. Hossain ◽  
Kobchat Wongchotigul ◽  
Michael G Spencer
Keyword(s):  
Aluminum Nitride ◽  
Band Edge ◽  
Near Band Edge ◽  
Edge Region ◽  
Urbach Tail ◽  
Carbon Doped ◽  
Exciton Recombination ◽  
Line Widths ◽  
Dominant Peak ◽  
Band Edge Transition

ABSTRACTThe Cathodoluminescence (CL) measurements of undoped and carbon doped aluminum nitride (AlN) thin films near the band-edge region were performed at 300, 77 and 4.2 K, respectively. These films were grown on three different substrates: 6H-SiC, 4H-SiC and sapphire. A dominant peak was observed in undoped samples around 5.9 eV. This peak can be further resolved into three distinct peaks at 6.05, 5.85, and 5.69 eV for AlN on sapphire. The temperature dependence of the peak positions and line widths were investigated. These peaks are believed to be due to exciton recombination. Also, the absorption spectra of carbon doped AlN on sapphire were analyzed to study the Urbach tail parameters which play an important role in near band-edge transitions.

Near band edge photoacoustic spectra od GaAs below room temperature

1990 ◽  
Vol 121 (1) ◽  
pp. K125-K127 ◽  
Author(s):  
T. Ikari ◽  
H. Yokoyama ◽  
K. Maeda ◽  
K. Futagami
Keyword(s):  
Room Temperature ◽  
Band Edge ◽  
Near Band Edge ◽  
Photoacoustic Spectra
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