Узкозонные гетероструктуры InAs-=SUB=-1-y-=/SUB=-Sb-=SUB=-y-=/SUB=-/InAsSbP (y=0.09-0.16) для спектрального диапазона 4-6 μm, полученные методом МОГФЭ
AbstractAsymmetric n -InAs/InAs_(1 – _ y )Sb_ y / p -InAsSbP heterostructures with a narrow-gap active layer and a composition range y = 0.09–0.16 were grown by vapor phase epitaxy from metalorganic compounds. Room-temperature electroluminescence was observed at a wavelength of up to λ = 5.1 μm at a spectral maximum. The study of low-temperature electroluminescence spectra provided the possibility to establish the existence of two radiative recombination channels caused by the nature of the InAsSb/InAsSbP heterointerface. The effect produced by the chemistry of the active layer on the composition of the grown barrier layer and the formation of the InAsSb/InAsSbP heterojunction with an increase in the antimony content in the InAsSb solid solution was demonstrated.