Nucleation of Oxygen Precipitates in a Quenched Czochralski Silicon Crystal

1992 ◽  
Vol 262 ◽  
Author(s):  
A. Ikari ◽  
H. Haga ◽  
O. Yoda ◽  
A. Uedono ◽  
Y. Ujihira
Keyword(s):  
Annealing Temperature ◽  
Silicon Crystal ◽  
Ir Absorption ◽  
Quenching Temperature ◽  
Annealing Behavior ◽  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Ir Absorption Spectra ◽  
Oxygen Precipitates ◽  
Oxygen Complexes

ABSTRACTWe have studied the nucleation of oxygen precipitates in Czochralski (Cz) Si crystal quenched from high temperature (1390°C). We observed that the oxygen precipitation was enhanced by the quenching treatment. We found the density of precipitates in the quenched crystal depended on quenching temperature and that nuclei for oxygen precipitates were introduced during quenching. We studied these nuclei using infrared absorption (IR) and positron annihilation techniques. In order to clarify the state of the nuclei, the quenched specimens were irradiated with 3-MeV electrons at a dose of 1×1018e/cm2 and vacancy-oxygen complexes were introduced. Positron lifetime spectra and IR absorption spectra for these specimens were measured as a function of isochronal annealing temperature. From the annealing behavior of the vacancy-oxygen complexes, it was found that oxygen clusters are introduced by the quenching and these clusters are the nuclei for the enhanced precipitation of the quenched Si crystal.

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

2009 ◽  
Vol 156-158 ◽  
pp. 275-278
Author(s):  
Xiang Yang Ma ◽  
Yan Feng ◽  
Yu Heng Zeng ◽  
De Ren Yang
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
High Temperature Anneal ◽  
Oxygen Precipitates ◽  
Co Doped ◽  
Oswald Ripening

Oxygen precipitation (OP) behaviors in conventional and nitrogen co-doped heavily arsenic-doped Czocharalski silicon crystals subjected to low-high two-step anneals of 650 oC/8 h + 1000 oC/4-256 h have been comparatively investigated. Due to the nitrogen enhanced nucleation of OP during the low temperature anneal, much higher density of oxygen precipitates generated in the nitrogen co-doped specimens. With the extension of high temperature anneal, Oswald ripening of OP in the nitrogen co-doped specimens preceded that in the conventional ones. Moreover, due to the Oswald ripening effect, the oxygen precipitates in the conventional specimens became larger with a wider range of sizes. While, the sizes of oxygen precipitates in the nitrogen co-doped specimens distributed in a much narrower range with respect to the conventional ones.

Effect of Annealing Temperature on the Properties of Silicon Crystal

2011 ◽  
Vol 415-417 ◽  
pp. 1323-1326 ◽  
Author(s):  
Qiu Yan Hao ◽  
Xin Jian Xie ◽  
Bing Zhang Wang ◽  
Cai Chi Liu
Keyword(s):  
Annealing Temperature ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Silicon Crystal ◽  
Minority Carrier Lifetime ◽  
Interstitial Oxygen ◽  
Oxygen Precipitation ◽  
Oxygen Donor ◽  
Infrared Spectrometer ◽  
Effect Of Oxygen

In order to investigate the performance of silicon single crystal depended on the annealing temperature, the minority carrier lifetime, the resistivity and oxygen concentration after different temperature annealing in Ar ambient were examined. And the effect of oxygen and related defects formed during annealed on the minority carrier lifetime were analyzed by microwave photoconductivity method, Fourier transform infrared spectrometer and four-probe measurement. The results indicate that after 450°C annealing for 30h, the resistivity and minority carrier lifetime of silicon increase significantly, while the concentration of interstitial oxygen decreases. After the annealing at 650°C, oxygen donor can be removed and the resistivity and the minority carrier lifetime decrease. During the high-temperature (above 650°C) annealing, the oxygen precipitation can decrease the minority carrier lifetime silicon.

Temperature Ramping for Nucleation of Oxygen Precipitates in Silicon

1984 ◽  
Vol 36 ◽  
Author(s):  
R. F. Pinizzotto ◽  
H. F. Schaake ◽  
R. G. Massey ◽  
D. W. Heidt
Keyword(s):  
Volume Fraction ◽  
New Method ◽  
Number Density ◽  
Small Particles ◽  
Ramp Rate ◽  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Temperature Ramp ◽  
Oxygen Precipitates ◽  
Precipitate Nucleation

ABSTRACTA new method for the nucleation of oxygen precipitates in Czochralski silicon is described. The temperature is ramped at approximately 100°C/hr from a very low value, near 400°C, to the highest temperature used for subsequent process steps. The technique generates a larger precipitate number density and a greater volume fraction of precipitated oxygen than standard isothermal nucleation anneals. The morphology of the precipitates changes from 0.lum sizéd (100) platelets to small particles unresovable by TEM. The new temperature ramping technique can reduce the time needed for precipitate nucleation by at least a factor of three. The details of oxygen precipitation can be totally controlled by adjusting the temperature ramp rate as a function of time.

Evidence for the effect of carbon on oxygen precipitation in Czochralski silicon crystal

2000 ◽  
Vol 87 (8) ◽  
pp. 3669-3673 ◽  
Author(s):  
Peidong Liu ◽  
Xiangyang Ma ◽  
Jinxin Zhang ◽  
Liben Li ◽  
Duanlin Que
Keyword(s):  
Silicon Crystal ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Enhancement of Oxygen Precipitation in Quenched Czochralski Silicon Crystals

1989 ◽  
Vol 163 ◽  
Author(s):  
A. Hara ◽  
T. Fukuda ◽  
I. Hirai ◽  
A. Ohsawa
Keyword(s):  
Cooling Rate ◽  
Slow Cooling ◽  
Quenching Temperature ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation

AbstractWe studied oxygen precipitation in quenched Czochralski silicon crystals. The larger the cooling rate and the higher the quenching temperature, the more oxygen precipitated. The defects enhancing oxygen precipitation are eliminated by annealing above 900°C. The defects are formed and removed repeatedly by quenching and slow cooling. We think that the aggregation of vacancies is related to those defects.

Structure of Thermally-Induced Microdefects in Czochralski Silicon

1983 ◽  
Vol 31 ◽  
Author(s):  
F. A. Ponce ◽  
S. Hahn
Keyword(s):  
Quasi Equilibrium ◽  
Interstitial Oxygen ◽  
Thermally Induced ◽  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Transmission Electron ◽  
Long Time ◽  
History Of ◽  
Silicon Materials ◽  
Oxygen Precipitates

ABSTRACTThe process of oxygen precipitation in Czochralski silicon materials has been studied using high resolution transmission electron microscopy. The resulting structure depends strongly on the thermal history of the material. The initial stages of precipitation involve the formation of clusters exhibiting strain fields which are coherent and isotropic at intermediate temperatures (∼7000°C). Incoherent defects are formed when the interstitial oxygen precipitates into substitutional sites in the silicon lattice. For long-time anneals, the quasi-equilibrium defect structure ranges from needle-like coesite (450–600°C), silica platelets (600–1000°C) to polyhedral silica precipitates (900–1200°C).

Germanium in Czochralski Silicon

2005 ◽  
Vol 242-244 ◽  
pp. 169-184 ◽  
Author(s):  
De Ren Yang ◽  
Jiahe Chen
Keyword(s):  
Mechanical Strength ◽  
Crystal Lattice ◽  
Silicon Crystal ◽  
Zone Formation ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

The behaviors of isovalent impurities doped in Czochralski (CZ) silicon crystal have attracted considerable attention in recent years. In this article, a review concerning recent processes in the study about germanium in CZ silicon is presented. The disturbance of silicon crystal lattice in and the influence on the mechanical strength due to germanium doping is described. Oxygen related donors, oxygen precipitation and voids defects in germanium doped Czochralski (GCZ) silicon has been demonstrated in detail. In addition, the denuded zone formation and the internal gettering technology of GCZ silicon is also discussed.

Germanium-doped Czochralski silicon: Oxygen precipitates and their annealing behavior

2006 ◽  
Vol 9 (4-5) ◽  
pp. 600-605 ◽  
Author(s):  
Jiahe Chen ◽  
Deren Yang ◽  
Hong Li ◽  
Xiangyang Ma ◽  
Duanlin Que
Keyword(s):  
Annealing Behavior ◽  
Czochralski Silicon ◽  
Oxygen Precipitates ◽  
Silicon Oxygen

The Effect of Annealing Temperature on the Morphology of Stacking Faults in Czochralski Silicon

1980 ◽  
Vol 2 ◽  
Author(s):  
R. F. Pinizzotto ◽  
H. F. Schaake
Keyword(s):  
Annealing Temperature ◽  
Stacking Faults ◽  
Nucleation And Growth ◽  
X Ray ◽  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Oxygen Precipitate

ABSTRACTNucleation and growth of stacking faults formed in CZ silicon during oxygen precipitation have been studied using x-ray topography, TEM and FTIR. Samples were annealed in argon for various times at 550°C and 750°C followed by a 16 hour anneal in dry oxygen at 1000°C. In samples annealed at 550°C, the stacking faults were several layers thick with colonies of precipitates at their centers. The faults in samples annealed at 750°C contained only one particle and were single in nature. It is proposed that the faults are formed by thin oxygen precipitate platelets and that the different morphologies are due to different oxygen precipitation rates. The platelets are probably a modified cristobalite, as determined by micro-diffraction results.

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