Temperature Ramping for Nucleation of Oxygen Precipitates in Silicon

1984 ◽  
Vol 36 ◽  
Author(s):  
R. F. Pinizzotto ◽  
H. F. Schaake ◽  
R. G. Massey ◽  
D. W. Heidt
Keyword(s):  
Volume Fraction ◽  
New Method ◽  
Number Density ◽  
Small Particles ◽  
Ramp Rate ◽  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Temperature Ramp ◽  
Oxygen Precipitates ◽  
Precipitate Nucleation

ABSTRACTA new method for the nucleation of oxygen precipitates in Czochralski silicon is described. The temperature is ramped at approximately 100°C/hr from a very low value, near 400°C, to the highest temperature used for subsequent process steps. The technique generates a larger precipitate number density and a greater volume fraction of precipitated oxygen than standard isothermal nucleation anneals. The morphology of the precipitates changes from 0.lum sizéd (100) platelets to small particles unresovable by TEM. The new temperature ramping technique can reduce the time needed for precipitate nucleation by at least a factor of three. The details of oxygen precipitation can be totally controlled by adjusting the temperature ramp rate as a function of time.

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

2009 ◽  
Vol 156-158 ◽  
pp. 275-278
Author(s):  
Xiang Yang Ma ◽  
Yan Feng ◽  
Yu Heng Zeng ◽  
De Ren Yang
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
High Temperature Anneal ◽  
Oxygen Precipitates ◽  
Co Doped ◽  
Oswald Ripening

Oxygen precipitation (OP) behaviors in conventional and nitrogen co-doped heavily arsenic-doped Czocharalski silicon crystals subjected to low-high two-step anneals of 650 oC/8 h + 1000 oC/4-256 h have been comparatively investigated. Due to the nitrogen enhanced nucleation of OP during the low temperature anneal, much higher density of oxygen precipitates generated in the nitrogen co-doped specimens. With the extension of high temperature anneal, Oswald ripening of OP in the nitrogen co-doped specimens preceded that in the conventional ones. Moreover, due to the Oswald ripening effect, the oxygen precipitates in the conventional specimens became larger with a wider range of sizes. While, the sizes of oxygen precipitates in the nitrogen co-doped specimens distributed in a much narrower range with respect to the conventional ones.

Structure of Thermally-Induced Microdefects in Czochralski Silicon

1983 ◽  
Vol 31 ◽  
Author(s):  
F. A. Ponce ◽  
S. Hahn
Keyword(s):  
Quasi Equilibrium ◽  
Interstitial Oxygen ◽  
Thermally Induced ◽  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Transmission Electron ◽  
Long Time ◽  
History Of ◽  
Silicon Materials ◽  
Oxygen Precipitates

ABSTRACTThe process of oxygen precipitation in Czochralski silicon materials has been studied using high resolution transmission electron microscopy. The resulting structure depends strongly on the thermal history of the material. The initial stages of precipitation involve the formation of clusters exhibiting strain fields which are coherent and isotropic at intermediate temperatures (∼7000°C). Incoherent defects are formed when the interstitial oxygen precipitates into substitutional sites in the silicon lattice. For long-time anneals, the quasi-equilibrium defect structure ranges from needle-like coesite (450–600°C), silica platelets (600–1000°C) to polyhedral silica precipitates (900–1200°C).

Nucleation of Oxygen Precipitates in a Quenched Czochralski Silicon Crystal

1992 ◽  
Vol 262 ◽  
Author(s):  
A. Ikari ◽  
H. Haga ◽  
O. Yoda ◽  
A. Uedono ◽  
Y. Ujihira
Keyword(s):  
Annealing Temperature ◽  
Silicon Crystal ◽  
Ir Absorption ◽  
Quenching Temperature ◽  
Annealing Behavior ◽  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Ir Absorption Spectra ◽  
Oxygen Precipitates ◽  
Oxygen Complexes

ABSTRACTWe have studied the nucleation of oxygen precipitates in Czochralski (Cz) Si crystal quenched from high temperature (1390°C). We observed that the oxygen precipitation was enhanced by the quenching treatment. We found the density of precipitates in the quenched crystal depended on quenching temperature and that nuclei for oxygen precipitates were introduced during quenching. We studied these nuclei using infrared absorption (IR) and positron annihilation techniques. In order to clarify the state of the nuclei, the quenched specimens were irradiated with 3-MeV electrons at a dose of 1×1018e/cm2 and vacancy-oxygen complexes were introduced. Positron lifetime spectra and IR absorption spectra for these specimens were measured as a function of isochronal annealing temperature. From the annealing behavior of the vacancy-oxygen complexes, it was found that oxygen clusters are introduced by the quenching and these clusters are the nuclei for the enhanced precipitation of the quenched Si crystal.

Dislocation Motions in Czochralski Silicon Wafers Treated by Rapid Thermal Processing under Different Atmospheres

2013 ◽  
Vol 205-206 ◽  
pp. 238-242 ◽  
Author(s):  
Ling Mao Xu ◽  
Chao Gao ◽  
Xiang Yang Ma ◽  
De Ren Yang
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Dislocation Motion ◽  
Nitrogen Atmosphere ◽  
Dislocation Glide ◽  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Pinning Effect ◽  
Oxygen Precipitates ◽  
Critical Resolved Shear Stress

Effects of prior rapid thermal processing (RTP) under different atmospheres on the motion of dislocations initiated from indentations in Czochralski (CZ) silicon have been investigated. It is found that the maximum gliding distances of dislocations in the specimens with the prior RTP under nitrogen (N2) atmosphere are much smaller than those in the specimens with the prior RTP under argon (Ar) atmosphere. This is also the case when the specimens received annealing for oxygen precipitation (OP) subsequent to the RTP at 1250 °C under N2 and Ar atmospheres, respectively. It is believed that the nitrogen atoms introduced during the RTP under nitrogen atmosphere or the oxygen precipitates facilitated by the RTP-introduced nitrogen atoms can exhibit pinning effect on the dislocation motion, which increases the critical resolved shear stress for dislocation glide.

Oxygen Precipitation in Heavily Phosphorus-doped Czochralski Silicon

2019 ◽  
Vol 18 (1) ◽  
pp. 1001-1011 ◽  
Author(s):  
Yuheng Zeng ◽  
Deren Yang ◽  
Xiangyang Ma ◽  
Xinpeng Zhang ◽  
Lixia Lin ◽  
...  
Keyword(s):  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Phosphorus Doped

A Method for Tracking a Solid Body in a Fluid Field in Immersed Boundary Methods

2018 ◽  
Author(s):  
Guangfa Yao
Keyword(s):  
Level Set ◽  
Solid Body ◽  
Volume Fraction ◽  
Transformation Matrix ◽  
The Body ◽  
New Method ◽  
Immersed Boundary ◽  
Body Interaction ◽  
Level Set Function ◽  
Set Function

Immersed boundary method has got increasing attention in modeling fluid-solid body interaction using computational fluid dynamics due to its robustness and simplicity. It usually simulates fluid-solid body interaction by adding a body force in the momentum equation. This eliminates the body conforming mesh generation that frequently requires a very labor-intensive and challenging task. But accurately tracking an arbitrary solid body is required to simulate most real world problems. In this paper, a few methods that are used to track a rigid solid body in a fluid domain are briefly reviewed. A new method is presented to track an arbitrary rigid solid body by solving a transformation matrix and identifying it using a level set function. Knowing level set function, the solid volume fraction can be derived if needed. A three-dimensional example is used to study a few methods used to represent and solve the transformation matrix, and demonstrate the presented new method.

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