A Study of Interdiffusion, Crystallinity, Strain and Thermal Stability of Si1−xGex/Si Created Using Pulsed Laser Induced Epitaxy (PLIE)

1992 ◽  
Vol 263 ◽  
Author(s):  
K.-Josef Kramer ◽  
S. Talwar ◽  
K. H. Weiner ◽  
T. W. Sigmon
Keyword(s):  
Thermal Stability ◽  
Pulsed Laser ◽  
Alloy Layer ◽  
Device Fabrication ◽  
Silicon Substrates ◽  
Yield Curves ◽  
Ion Channeling ◽  
Good Crystallinity ◽  
Thermal Stability Of ◽  
Xecl Excimer Laser

ABSTRACTHeteroepitaxy of Sil−xGex alloy layers on Si(100) and Si(111) has been achieved using Pulsed Laser Induced Epitaxy (PLIE). The energy of 1-50 pulses from a spatially homogenized XeCl excimer laser is used to melt a structure of electron beam evaporated Germanium on Silicon substrates. On Si(100) substrates alloys with Germanium fractions between 6 and 22% are investigated and exhibit very good crystallinity, as confirmed by MeV-Ion Channeling along the <100> - direction. Heteroepitaxy on Si(l11) yields similar results. MeV-Ion Channeling is also used to determine the level of strain in the layers. This is done by comparing angular yield curves around the <110> - direction for substrate and alloy layer. The obtained strain values are close to calculations for an ideally strained layer state. The strain is also measured for layers that have been subjected to different thermal cycles. As a result of this, predictions of feasibility for subsequent device fabrication can be made for the layers.

GaN Growth on Si Using ZnO Buffer Layer

2003 ◽  
Vol 764 ◽  
Author(s):  
K.C. Kim ◽  
S.W. Kang ◽  
O. Kryliouk ◽  
T.J. Anderson ◽  
D. Craciun ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Buffer Layer ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Films ◽  
Silicon Substrates ◽  
Zno Buffer Layer ◽  
Thermal Stability Of

AbstractZnO films were deposited by Pulsed Laser Deposition (PLD) onto silicon substrates to serve as a buffer layer for GaN films grown by MOCVD. A ZnO buffer layer was found to improve the quality of GaN grown on Si. The thermal stability of ZnO as a buffer layer was also examined. It was determined that exposure of ZnO/Si to NH3 at high temperature (> 600°C) results in the decomposition of ZnO and subsequent poor nucleation of GaN. The ZnO layer thickness on GaN quality was found to be important.

Synthesis of Fine Nickel Powders by Solvothermal Method

2007 ◽  
Vol 334-335 ◽  
pp. 1145-1148 ◽  
Author(s):  
Yin Ye ◽  
Fang Li Yuan ◽  
Li Min Zhou ◽  
Hai Tao Huang
Keyword(s):  
Thermal Stability ◽  
Chemical Reduction ◽  
Spherical Shape ◽  
Butyl Alcohol ◽  
Nickel Powders ◽  
Good Crystallinity ◽  
Average Size ◽  
Solvothermal Conditions ◽  
Thermal Stability Of ◽  
Fine Nickel

Fine nickel powders have been prepared by chemical reduction between nickel acetate and alcohol under solvothermal conditions. The effect of adding surfactant and varying solvent on the particle size of the as-synthesized nickel powders have been explored. SEM, XRD and TG were employed to characterize the size, morphology, crystalline structure and the thermal stability of the as-synthesized nickel powders. It is revealed that the FCC-structured nickel powders are of uniform spherical shape with good crystallinity and thermal stability. Typically, nickel powders with an average size of 300 nm were obtained at 200°C for 8 h using 0.04 mol/L solution of Ni(CH3COO)2·4H2O in n-butyl alcohol under solvothermal conditions.

Ion Induced Mixing of AlGaAs/GaAs Superlattices

1987 ◽  
Vol 93 ◽  
Author(s):  
T. Venkatesan ◽  
S. A. Schwarz ◽  
P. Mei ◽  
H. W. Yoon
Keyword(s):  
Thermal Stability ◽  
Process Parameters ◽  
Alloy Composition ◽  
Device Fabrication ◽  
Crystalline Quality ◽  
Good Crystalline Quality ◽  
Potential Applications ◽  
Mixed Layers ◽  
High Degree ◽  
Thermal Stability Of

ABSTRACTSubsequent to the implantation of certain ions, the thermal stability of AlGaAs/GaAs superlattices can be reduced, enabling mixing of the layers at temperatures where they would otherwise be stable. The mixed layers have intermediate alloy composition and are of good crystalline quality. As a result this process is of great value in device fabrication where a high degree of vertical and lateral bandgap control is desirable. This paper reviews our work in understanding the mechanism of diffusion, its dependence on varilous process parameters, and potential applications in device fabrication.

Excellent Electrochemical Performance and Thermal Stability of LiNi0.5Mn1.5O4 Thin-Film Cathode Prepared by Pulsed Laser Deposition

2013 ◽  
Vol 853 ◽  
pp. 83-89
Author(s):  
Yan Wang ◽  
Guang Yang ◽  
Qian Peng ◽  
Pei Xiang Lu
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Pulsed Laser Deposition ◽  
Rate Capability ◽  
Pulsed Laser ◽  
Reversible Capacity ◽  
Laser Deposition ◽  
Lithium Secondary Batteries ◽  
Steel Substrates ◽  
Thermal Stability Of

Lithium secondary batteries using LiNi0.5Mn1.5O4 (LNMO) films as a cathode material were prepared by pulsed laser deposition on stainless steel substrates. X-ray diffraction and Field-emission Scanning Electron Microscope results show that the film deposited at 750°C exhibits good crystallinity with well-defined grains structure. Galvanostatic charge/discharge measurement results revealed that the reversible capacity maintains 116.8mAhg-1 after 100 cycles at 0.5C. It also exhibits excellent rate capability, as the rates increase to 5 and 10 C, about 95.4% and 92.3% of its initial capacity at 0.2C can be retained. In additional, thermal stability of the Al2O3 coated LNMO thin film cathodes were also explored. The high temperature cyclic performance of LNMO thin film electrode was significantly enhanced by the coating.

Microstructural Investigations of Hafnium Aluminum Oxide Films

2008 ◽  
Vol 1074 ◽  
Author(s):  
Doina Craciun ◽  
Gabriel Socol ◽  
Emanuel Axente ◽  
Aurelian-Catalin Galca ◽  
Rajiv Singh ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Phase Composition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Grazing Incidence ◽  
Laser Deposition ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thermal Stability Of

ABSTRACTThe crystalline structure, composition, chemical bonding and thermal stability of HfO2-Al2O3 mixtures deposited on Si using a combinatorial pulsed laser deposition technique were investigated. After deposition some films were annealed at temperatures from 850 to 950 °C for 6 or 12 minutes. Grazing incidence x-ray diffraction investigations were performed to asses the crystallinity and thermal stability of the annealed layers. Measurements of the Al to Hf ratios were performed using energy dispersive x-ray spectroscopy and x-ray photoelectron spectroscopy. From simulations of the x-ray reflectivity and spectroscopic ellipsometry spectra the phase composition and thickness of the films was calculated and then the Al to Hf ratios. Al/Hf values of 1 and 8 were found to be necessary to block the crystallization of the films after anneals at 850 and 950 °C, respectively.

Thermal stability of amorphous carbon films grown by pulsed laser deposition

1996 ◽  
Vol 68 (12) ◽  
pp. 1643-1645 ◽  
Author(s):  
T. A. Friedmann ◽  
K. F. McCarty ◽  
J. C. Barbour ◽  
M. P. Siegal ◽  
Dean C. Dibble
Keyword(s):  
Thermal Stability ◽  
Pulsed Laser Deposition ◽  
Amorphous Carbon ◽  
Pulsed Laser ◽  
Carbon Films ◽  
Laser Deposition ◽  
Amorphous Carbon Films ◽  
Thermal Stability Of
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