Maskless Patterning of Cr Films Using Focused Ion Beams

1983 ◽  
Vol 27 ◽  
Author(s):  
K. Gamo ◽  
K. Moriizumi ◽  
T. Matsui ◽  
S. Namba
Keyword(s):  
Ion Implantation ◽  
Plasma Etching ◽  
Etching Rate ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Latent Image ◽  
Sharp Threshold ◽  
Patterning Technique ◽  
Resistant Layer ◽  
Maskless Patterning

ABSTRACTCharacteristics of maskless patterning of Cr films using focused Sb+ ion implantation have been investigated. Dose and depth dependence of the etching rate of Sb-implanted layers during plasma etching using CCl4 were measured. Sb profiles were also measured by Rutherford backscattering techniques. It was found that a sharp threshold dose exists to form an etch-resistant layer by Sb implantation. It was also found that a latent image of an Sb implanted pattern at a dose ≥3.8×1015/cm2 was developed by the plasma etching, and that Cr patterns with a thickness of a few hundred nanometers were formed by the present maskless patterning technique.

Recent Advances in The Application of Focused Ion Beams

1985 ◽  
Vol 45 ◽  
Author(s):  
Kenji Gamo ◽  
Susumu Namba
Keyword(s):  
Ion Implantation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Ion Beam Modification ◽  
Chemical Effects ◽  
Recent Advances ◽  
Maskless Patterning

Recent advances of focused ion beam systems and their applications are presented. The applications include maskless ion implantation and various maskless patterning techniques which make use of ion induced chemical effects. These are ion beam assisted etching, deposition and ion beam modification techniques and are promising to improve patterning speed and extend applications of focused ion beams.

Maskless Patterning of Mo and Si by Focused Ion Beam Implantation

1986 ◽  
Vol 76 ◽  
Author(s):  
Kenji Gamo ◽  
Katsuyuki Yonehara ◽  
Shohei Nagatomo ◽  
Susumu Namba
Keyword(s):  
Plasma Etching ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Etching Rate ◽  
Chemical Properties ◽  
Sample Surface ◽  
Tone Pattern ◽  
Patterning Technique ◽  
Maskless Patterning ◽  
Higher Doses

ABSTRACTMaskless patterning of Mo and Si was done by implanting 50 keV focused Ga+ ion beam and by plasma etching using CF4 gas. The implantation is done to modify the chemical properties of the sample surface. It was found that Mo films became etch-resistant for the plasma etching after implantation at a dose higher than 4×1015 /cm2. Si crystals showed a positive tone pattern due to a radiation enhanced etching at a dose lower than 5x1016/cm2. At higher doses, the etching rate decreased and above 8 x 1016/cm2, no etching was observed in the implanted region. Patterns with a thickness of a several hundred nanometers were formed by the present maskless patterning technique.

Maskless Etching of SiO2 by Ion Beam Assisted Etching Technique

1987 ◽  
Vol 101 ◽  
Author(s):  
Zheng Xu ◽  
Kenji Gamo ◽  
Susumu Namba
Keyword(s):  
Energy Deposition ◽  
Ion Beam ◽  
Etching Rate ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Etching Technique ◽  
Physical Sputtering ◽  
H2 Addition ◽  
Ion Species ◽  
Energy Deposition Rate

ABSTRACTCharacteristics of ion beam assisted etching (IBAE) for SiO2 have been investigated to reveal'a possibility for maskless etching using focused ion beams. The ion beam assisted etching was done by bombarding 50 keV unfocused ion beams in XeF2 atmosphere and effect of various etching parameter on etching characteristics have been investigated. These are the effects of XeF2 gas pressure, bombarding ion species, bombarding angle and H2 addition, etc. Significant enhancements up to 100 times larger than physical sputtering were achieved. The selectivity of SiO2 to Si could be tailored to specific requirements from 0.1 to 6 by changing the gas mixing ratio. The etching rate was approximately proportional to the energy deposition rate bombarded by ion beam on surface. Carbon contamination on surface after etching were improved by the introduction of XeF2 gas.

scholarly journals Ion implantation with focused ion beams.

1990 ◽  
Vol 56 (7) ◽  
pp. 1181-1184
Author(s):  
Haruo KASAHARA ◽  
Hiroshi SAWARAGI ◽  
Ryuso AIHARA
Keyword(s):  
Ion Implantation ◽  
Ion Beams ◽  
Focused Ion Beams

Gain-coupled distributed-feedback GaInAs-GaAs laser structures defined by maskless patterning with focused ion beams

1995 ◽  
Vol 7 (8) ◽  
pp. 845-847 ◽  
Author(s):  
A. Orth ◽  
J.P. Reithmaier ◽  
F. Faller ◽  
A. Forchel
Keyword(s):  
Ion Beams ◽  
Distributed Feedback ◽  
Focused Ion Beams ◽  
Gaas Laser ◽  
Maskless Patterning

Characteristics of Al maskless patterning using focused ion beams

1985 ◽  
Vol 7-8 ◽  
pp. 864-868 ◽  
Author(s):  
Kenji Gamo ◽  
Ge Huang ◽  
Kouichi Moriizumi ◽  
Norihiko Samoto ◽  
Ryuichi Shimizu ◽  
...  
Keyword(s):  
Ion Beams ◽  
Focused Ion Beams ◽  
Maskless Patterning

Preparation of TEM samples by focused ion beams

1995 ◽  
Vol 53 ◽  
pp. 518-519
Author(s):  
John F. Walker ◽  
J C Reiner ◽  
C Solenthaler
Keyword(s):  
Integrated Circuit ◽  
Polycrystalline Silicon ◽  
Field Effect Transistor ◽  
High Spatial Resolution ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Precise Location ◽  
Effect Transistor ◽  
Circuit Technology

The high spatial resolution available from TEM can be used with great advantage in the field of microelectronics to identify problems associated with the continually shrinking geometries of integrated circuit technology. In many cases the location of the problem can be the most problematic element of sample preparation. Focused ion beams (FIB) have previously been used to prepare TEM specimens, but not including using the ion beam imaging capabilities to locate a buried feature of interest. Here we describe how a defect has been located using the ability of a FIB to both mill a section and to search for a defect whose precise location is unknown. The defect is known from electrical leakage measurements to be a break in the gate oxide of a field effect transistor. The gate is a square of polycrystalline silicon, approximately 1μm×1μm, on a silicon dioxide barrier which is about 17nm thick. The break in the oxide can occur anywhere within that square and is expected to be less than 100nm in diameter.

scholarly journals Low-temperature charge transport in Ga-acceptor nanowires implanted by focused-ion beams

2007 ◽  
Vol 91 (12) ◽  
pp. 122105 ◽  
Author(s):  
S. J. Robinson ◽  
C. L. Perkins ◽  
T.-C. Shen ◽  
J. R. Tucker ◽  
T. Schenkel ◽  
...  
Keyword(s):  
Low Temperature ◽  
Charge Transport ◽  
Ion Beams ◽  
Focused Ion Beams
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