Off-Axis Growth of Y1Ba2Cu3O7-y on Different Substrates

1992 ◽  
Vol 275 ◽  
Author(s):  
P. R. Broussard ◽  
V. C. Cestone ◽  
Laura H. Allen ◽  
M. E. Reeves

ABSTRACTFilms of Y1Ba2Cu3O7-y have been grown by off-axis DC sputtering onto substrates of (100) SrTiO3. LaAlO, LaGaO3, Yttria-stabilized Zirconia, and MgO. Our best films, grown on SrTiO3 substrates at a temperature of 650°C and a sputtering pressure of 100 mTorr (consisting of 80 mTorr Ar and 20 mTorr O2) have room temperature resistivities of 280 μΩ-cm, an inductive Tcof 88 K and an inductive Jc 'Sof∼ 2.6 × 106 A/cm2 at 77 K and 3.9 × 107 A/cm2at 4.2 K. Films grown on YSZ tend to have higher resistivities (∼ 600 μΩ-cm) but still have Tc's of 86 K and Jc's of - 106 A/cm2 at 77 K. Films down to 550 Å still have Tc's of 86 K and Jc's at 77 K > 106 A/cm2. Films grown at lower temperatures (600°C) on S1TiO3 begin to show a-axis growth, but the superconducting properties deteriorate.

2020 ◽  
Vol 40 (5) ◽  
pp. 2050-2055 ◽  
Author(s):  
Lin Feng ◽  
Arseniy Bokov ◽  
Shen J. Dillon ◽  
Ricardo H.R. Castro

1997 ◽  
Vol 12 (10) ◽  
pp. 2589-2593 ◽  
Author(s):  
Yi-Rong He ◽  
Vidya Subramanian ◽  
John J. Lannutti

Sedimentation in organic solvents was followed by hot-pressing to produce 2 mole % yttria stabilized zirconia-NiAl functionally graded materials (FGM's). These FGM's were better able to accommodate high levels of residual stress than alumina-NiAl FGM's; this is possibly due to enhanced tetragonal phase retention. However, we found that the zirconia layer in these FGM's subsequently experiences room temperature transformation of t-ZrO2 to m-ZrO2.


2013 ◽  
Vol 57 (1) ◽  
pp. 1103-1106
Author(s):  
D. Y. Jang ◽  
H. Kim ◽  
K. Bae ◽  
M. V. F. Schlupp ◽  
M. Prestat ◽  
...  

2005 ◽  
Vol 905 ◽  
Author(s):  
Paul F. Newhouse ◽  
Cheol-Hee Park ◽  
Douglas A. Keszler ◽  
Janet Tate ◽  
Peter S. Nyholm

AbstractHigh electron mobility thin films of In2−xWxO3+d (0 ≤ × ≤ 0.075) were prepared by pulsed laser deposition. The highest mobility polycrystalline and textured films show mobility >110 cm2/Vs on both amorphous SiO2 and single crystal yttria-stabilized zirconia substrates. The carrier density is in the range 1−3 × 1020 cm−3 at room temperature. The W dopant concentration for films with optimized electrical properties was x ∼ 0.03.


2010 ◽  
Vol 20 (30) ◽  
pp. 6235 ◽  
Author(s):  
Hugo J. Avila-Paredes ◽  
Enrique Barrera-Calva ◽  
Harlan U. Anderson ◽  
Roger A. De Souza ◽  
Manfred Martin ◽  
...  

Ionics ◽  
2001 ◽  
Vol 7 (4-6) ◽  
pp. 332-338 ◽  
Author(s):  
T. Bak ◽  
M. Rekas ◽  
J. Nowotny ◽  
C. C. Sorrell ◽  
A. Adamski ◽  
...  

2006 ◽  
Vol 45 (11) ◽  
pp. 8827-8831 ◽  
Author(s):  
Naoki Wakiya ◽  
Naoya Tajiri ◽  
Takanori Kiguchi ◽  
Nobuyasu Mizutani ◽  
Jeffrey S. Cross ◽  
...  

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