High Electron Mobility W-doped In2O3 Thin Films

2005 ◽  
Vol 905 ◽  
Author(s):  
Paul F. Newhouse ◽  
Cheol-Hee Park ◽  
Douglas A. Keszler ◽  
Janet Tate ◽  
Peter S. Nyholm

AbstractHigh electron mobility thin films of In2−xWxO3+d (0 ≤ × ≤ 0.075) were prepared by pulsed laser deposition. The highest mobility polycrystalline and textured films show mobility >110 cm2/Vs on both amorphous SiO2 and single crystal yttria-stabilized zirconia substrates. The carrier density is in the range 1−3 × 1020 cm−3 at room temperature. The W dopant concentration for films with optimized electrical properties was x ∼ 0.03.

2003 ◽  
Vol 82 (22) ◽  
pp. 3901-3903 ◽  
Author(s):  
E. M. Kaidashev ◽  
M. Lorenz ◽  
H. von Wenckstern ◽  
A. Rahm ◽  
H.-C. Semmelhack ◽  
...  

2005 ◽  
Vol 87 (11) ◽  
pp. 112108 ◽  
Author(s):  
P. F. Newhouse ◽  
C.-H. Park ◽  
D. A. Keszler ◽  
J. Tate ◽  
P. S. Nyholm

2008 ◽  
Vol 104 (1) ◽  
pp. 013708 ◽  
Author(s):  
Matthias Brandt ◽  
Holger von Wenckstern ◽  
Heidemarie Schmidt ◽  
Andreas Rahm ◽  
Gisela Biehne ◽  
...  

2011 ◽  
Vol 191 (1) ◽  
pp. 12-23 ◽  
Author(s):  
Sebastian Heiroth ◽  
Ruggero Frison ◽  
Jennifer L.M. Rupp ◽  
Thomas Lippert ◽  
Eszter J. Barthazy Meier ◽  
...  

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