Internal Electric Field in Light-Degraded p-i-n a-Si:H Solar Cells
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Based on results of a-Si:H solar cell computer simulation solving numerically the Poisson, transport and continuity equations, using a rather complex density of states distribution being in agreement with experimental observations, shows that light-soaking degradation can be attributed to both, light induced effects in heterojunction region and to changes in the i-layer, which together tend to reduce the built-in electric field inside of the i-region. Measurements of spectral sensitivity using small intensity monochromatic illumination in combination with an accurate computer analysis provides the possibility of ascertaining which of the degrading effects is the dominating one in a particular a-Si:H solar cell structure.
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2021 ◽
Vol 68
(4)
◽
pp. 1757-1763
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2017 ◽
Vol 60
(5)
◽
pp. 407-414
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