Internal Electric Field in Light-Degraded p-i-n a-Si:H Solar Cells

1993 ◽  
Vol 297 ◽  
Author(s):  
Franc Smole ◽  
JoŽe Furlan ◽  
Marko TopiČ

Based on results of a-Si:H solar cell computer simulation solving numerically the Poisson, transport and continuity equations, using a rather complex density of states distribution being in agreement with experimental observations, shows that light-soaking degradation can be attributed to both, light induced effects in heterojunction region and to changes in the i-layer, which together tend to reduce the built-in electric field inside of the i-region. Measurements of spectral sensitivity using small intensity monochromatic illumination in combination with an accurate computer analysis provides the possibility of ascertaining which of the degrading effects is the dominating one in a particular a-Si:H solar cell structure.

2021 ◽  
Vol 53 (1) ◽  
Author(s):  
Agageldi Muhammetgulyyev ◽  
Yeşim Yalçın ◽  
Furkan Kuruoğlu ◽  
Erman Çokduygulular ◽  
Barış Kınacı ◽  
...  

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 638
Author(s):  
Sanam SaeidNahaei ◽  
Hyun-Jun Jo ◽  
Sang Jo Lee ◽  
Jong Su Kim ◽  
Sang Jun Lee ◽  
...  

For examining the carrier movements through tunnel junction, electrically and optically-biased photoreflectance spectroscopy (EBPR and OBPR) were used to investigate the internal electric field in the InGaP/GaAs dual junction solar cell at room temperature. At InGaP and GaAs, the strength of p-n junction electric fields (Fpn) was perturbed by the external DC bias voltage and CW light intensity for EBPR and OBPR experiments, respectively. Moreover, the Fpn was evaluated using the Fast Fourier Transform (FFT) of the Franz—Keldysh oscillation from PR spectra. In the EBPR, the electric field decreased by increasing the DC bias voltage, which also decreased the potential barrier. In OBPR, when incident CW light is absorbed by the top cell, the decrement of the Fpn in the GaAs cell indicates that the photogenerated carriers are accumulated near the p-n junction. Photogenerated carriers in InGaP can pass through the tunnel junction, and the PR results show the contribution of the modification of the electric field by the photogenerated carriers in each cell. We suggest that PR spectroscopy with optical-bias and electrical-bias could be analyzed using the information of the photogenerated carrier passed through the tunnel junction.


2017 ◽  
Vol 60 (5) ◽  
pp. 407-414 ◽  
Author(s):  
Mengni Xue ◽  
Hai Zhou ◽  
Yang Xu ◽  
Jun Mei ◽  
Lu Yang ◽  
...  

2012 ◽  
Vol 112 (11) ◽  
pp. 114910 ◽  
Author(s):  
Muhammad Monirul Islam ◽  
Naoya Miyashita ◽  
Nazmul Ahsan ◽  
Takeaki Sakurai ◽  
Katsuhiro Akimoto ◽  
...  

2017 ◽  
Vol 8 (6) ◽  
pp. 549-522
Author(s):  
Vytautas Makarskas ◽  
Mindaugas Jurevičius ◽  
Artūras Kilikevičius

Solar cells are one of the most popular renewable energy generation technologies, because they are reliable, low operating and maintenance costs, to conclude without any moving parts and is a boundless source of energy. In any solar cell can avoid mechanical vibrations, which may produce the solar cell glass, damage to the inner structure. In order to determine the influence of mechanical vibrations of the solar cell structure was carried out theoretical and experimental modal analysis. The study found dangerous solar cell frequencies and their deformation and optimize the method of attachment which provides a better solar cell stability. Saulės elementai – vieni populiariausių atsinaujinančių energijos gavybos technologijų, nes jie patikimi, jų mažos eksploatavimo ir priežiūros išlaidos, šie elementai sudaryti be jokių judančių dalių ir yra beribis energijos šaltinis. Bet saulės elementas neišvengia mechaninių virpesių, kurie gali įskelti saulės elemento stiklą, pažeisti vidinę konstrukciją. Siekiant nustatyti mechaninių virpesių įtaką saulės elemento konstrukcijai, buvo atliktos teorinės ir eksperimentinės modalinės analizės. Tyrime buvo rasti pavojingi saulės elemento dažniai ir jų deformacijos, rastas optimalus tvirtinimo būdas, kuris suteikia geresnį saulės elemento stabilumą.


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