Use of Optical Emission Spectroscopy as a Diagnostic Technique for Plasma Deposition of Hydrogenated Amorphous Silicon and Carbon

MRS Proceedings ◽

10.1557/proc-30-291 ◽

1983 ◽

Vol 30 ◽

Author(s):

F. J. Kampas

Keyword(s):

Energy Distribution ◽

Amorphous Silicon ◽

Emission Spectroscopy ◽

Optical Emission Spectroscopy ◽

Plasma Deposition ◽

Hydrogenated Amorphous Silicon ◽

Diagnostic Technique ◽

Optical Emission ◽

Hydrogen Mixtures ◽

Hydrogenated Amorphous

ABSTRACTOptical emission intensities have been measured as a function of composition for silane-argon and silane-hydrogen mixtures used in the deposition of hydrogenated amorphous silicon. It was found that changes in silane fraction have a large effect on the electron concentration and energy distribution in the discharge.

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Optical emission spectroscopy: Toward the identification of species in the plasma deposition of hydrogenated amorphous silicon alloys

Solar Cells ◽

10.1016/0379-6787(80)90014-9 ◽

1980 ◽

Vol 2 (4) ◽

pp. 385-400 ◽

Author(s):

F.J. Kampas ◽

R.W. Griffith

Keyword(s):

Amorphous Silicon ◽

Emission Spectroscopy ◽

Optical Emission Spectroscopy ◽

Plasma Deposition ◽

Hydrogenated Amorphous Silicon ◽

Optical Emission ◽

Silicon Alloys ◽

Identification Of Species ◽

Hydrogenated Amorphous

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Analysis of intrinsic hydrogenated amorphous silicon passivation layer growth for use in heterojunction silicon wafer solar cells by optical emission spectroscopy

Journal of Applied Physics ◽

10.1063/1.4810900 ◽

2013 ◽

Vol 113 (23) ◽

pp. 234310 ◽

Author(s):

Jia Ge ◽

Zhi Peng Ling ◽

Johnson Wong ◽

Rolf Stangl ◽

Armin G. Aberle ◽

...

Keyword(s):

Solar Cells ◽

Amorphous Silicon ◽

Silicon Wafer ◽

Emission Spectroscopy ◽

Optical Emission Spectroscopy ◽

Hydrogenated Amorphous Silicon ◽

Optical Emission ◽

Layer Growth ◽

Passivation Layer ◽

Hydrogenated Amorphous

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Optoelectronic and Structural Properties of Good Quality Hydrogenated Amorphous Silicon Carbide Films Deposited by Hot Wire Assisted RF Plasma Deposition Technique

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.5480 ◽

1998 ◽

Vol 37 (Part 1, No. 10) ◽

pp. 5480-5484 ◽

Author(s):

S. Chattopadhyay ◽

Debabrata Das ◽

A. K. Barua ◽

D. L. Williamson ◽

S. T. Kshirsagar

Keyword(s):

Silicon Carbide ◽

Amorphous Silicon ◽

Structural Properties ◽

Plasma Deposition ◽

Hydrogenated Amorphous Silicon ◽

Rf Plasma ◽

Hot Wire ◽

Deposition Technique ◽

Amorphous Silicon Carbide ◽

Hydrogenated Amorphous

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Performance control for amorphous silicon germanium alloys by in situ optical emission spectroscopy

Thin Solid Films ◽

10.1016/j.tsf.2018.05.016 ◽

2018 ◽

Vol 659 ◽

pp. 36-40 ◽

Author(s):

Guanghong Wang ◽

Chengying Shi ◽

Lei Zhao ◽

Libin Mo ◽

Hongwei Diao ◽

...

Keyword(s):

Amorphous Silicon ◽

Silicon Germanium ◽

Emission Spectroscopy ◽

Optical Emission Spectroscopy ◽

Optical Emission ◽

Performance Control ◽

Amorphous Silicon Germanium ◽

Silicon Germanium Alloys

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Optical emission spectroscopy of lead sulfide films plasma deposition

Spectrochimica Acta Part A Molecular and Biomolecular Spectroscopy ◽

10.1016/j.saa.2020.118629 ◽

2020 ◽

Vol 241 ◽

pp. 118629 ◽

Author(s):

Leonid Mochalov ◽

Dominik Dorosz ◽

Marcin Kochanowicz ◽

Alexander Logunov ◽

Aleksey Letnianchik ◽

...

Keyword(s):

Lead Sulfide ◽

Emission Spectroscopy ◽

Optical Emission Spectroscopy ◽

Plasma Deposition ◽

Optical Emission

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Ion bombardment effects in plasma deposition of hydrogenated amorphous silicon carbide films: A comparative study of d.c. and r.f. discharges

Thin Solid Films ◽

10.1016/0040-6090(83)90134-7 ◽

1983 ◽

Vol 109 (2) ◽

pp. 145-158 ◽

Author(s):

Y. Catherine ◽

A. Zamouche ◽

J. Bullot ◽

M. Gauthier

Keyword(s):

Silicon Carbide ◽

Comparative Study ◽

Amorphous Silicon ◽

Plasma Deposition ◽

Hydrogenated Amorphous Silicon ◽

Ion Bombardment ◽

Amorphous Silicon Carbide ◽

Hydrogenated Amorphous

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The growth process and optical emission spectroscopy of amorphous silicon carbide films from methyltrichlorosilane by rf plasma enhanced CVD

Surface and Coatings Technology ◽

10.1016/s0257-8972(01)01078-7 ◽

2001 ◽

Vol 142-144 ◽

pp. 360-364 ◽

Author(s):

Tsutomu Kaneko ◽

Noriaki Miyakawa ◽

Hayato Sone ◽

Hiroyosi Yamazakia

Keyword(s):

Silicon Carbide ◽

Amorphous Silicon ◽

Emission Spectroscopy ◽

Growth Process ◽

Optical Emission Spectroscopy ◽

Optical Emission ◽

Rf Plasma ◽

Amorphous Silicon Carbide ◽

Plasma Enhanced Cvd

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Energy distribution and thermal broadening of band tail states in doped and undoped hydrogenated amorphous silicon

Journal of Non-Crystalline Solids ◽

10.1016/0022-3093(89)90126-9 ◽

1989 ◽

Vol 114 ◽

pp. 247-249 ◽

Author(s):

S. Aljishi ◽

J.D. Cohen ◽

L. Ley

Keyword(s):

Energy Distribution ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Band Tail ◽

Hydrogenated Amorphous

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Form-Free Reconstruction of an Electron Energy Distribution Function from Optical Emission Spectroscopy

10.1063/1.2909110 ◽

2008 ◽

Author(s):

D. Dodt ◽

A. Dinklage ◽

R. Fischer ◽

K. Bartschat ◽

O. Zatsarinny ◽

...

Keyword(s):

Distribution Function ◽

Energy Distribution ◽

Electron Energy ◽

Electron Energy Distribution Function ◽

Emission Spectroscopy ◽

Optical Emission Spectroscopy ◽

Optical Emission ◽

Energy Distribution Function ◽

Electron Energy Distribution

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Optical Emission Spectroscopy(OES) and Characterization of Hydrogenated Amorphous Carbon (a-C:H) by Ionization Deposition.

Shigen-to-Sozai ◽

10.2473/shigentosozai.110.889 ◽

1994 ◽

Vol 110 (11) ◽

pp. 889-894

Author(s):

Toshiaki UEDA ◽

Yukio IDE ◽

Takashi NAKAMURA ◽

Kusuhiro MUKAI

Keyword(s):

Amorphous Carbon ◽

Emission Spectroscopy ◽

Optical Emission Spectroscopy ◽

Optical Emission ◽

Hydrogenated Amorphous Carbon ◽

Hydrogenated Amorphous

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