Sub-Nanometer Microscopy the Easy Way: An Underutilzed Tool for Reliability Assurance

1993 ◽  
Vol 309 ◽  
Author(s):  
Doug Hamilton ◽  
C. Colvard

AbstractScanning electron microscopy (SEM) is a frequently used tool for establishing reliability where potential causes of failure are related to structural aspects that show up on a submicron scale. Conventional SEMs, however, even those equipped with field emission sources, can provide high-quality photomicrographs only up to a magnification of about 100,000×. For many purposes greater resolution (several nanometers or below) is required, in which case the usual alternative is to turn to transmission electron microscopy (TEM), in spite of the laborious sample preparation required and limited plan-view images obtained. We describe here an underutilized alternative to TEM for many applications. The in-lens field emission SEM (ILFESEM) can provide pictures above 500,000× magnification with sub-nanometer resolution, with the simple sample preparation and surface viewing advantages of the SEM. Magnification in this range is necessary to verify modern day tolerances on surface morphology and roughness, oxide and thin film structure, thickness, and step coverage, and pore sizes in adhesion layers or diffusion membranes.

1992 ◽  
Vol 281 ◽  
Author(s):  
S. Shih ◽  
K. H. Jung ◽  
D. L. Kwong

ABSTRACTWe have developed a new, minimal damage approach for examination of luminescent porous Si layers (PSLs) by transmission electron microscopy (TEM). In this approach, chemically etched PSLs are fabricated after conventional plan-view TEM sample preparation. A diffraction pattern consisting of a diffuse center spot, characteristic of amorphous material, is primarily observed. However, crystalline, microcrystalline, and amorphous regions could all be observed in selected areas. A crystalline mesh structure could be observed in some of the thin areas near the pinhole. The microcrystallite sizes were 15–150 Å and decreased in size when located further from the pinhole.


2009 ◽  
Vol 15 (S2) ◽  
pp. 360-361
Author(s):  
N Wang ◽  
A Myers ◽  
M Sidorov ◽  
H Koo ◽  
C Yuan ◽  
...  

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009


1997 ◽  
Vol 480 ◽  
Author(s):  
Suli Suder ◽  
C. A. Faunce ◽  
S. E. Donnelly

AbstractVarious small-angle wedge two-view samples have been prepared by a small-angle cleavage technique using hand tools and examined by transmission electron microscopy. Cleaved wedges from the same material are mounted both as plan-view and cross-sectional samples on the same TEM specimen grid allowing convenient examination in both views. Samples of Si3N4, Zr, Co and TiN/CN/TiN films deposited on Si, and He ion implanted Si prepared by this technique are shown to be suitable for analysis in the TEM.


2009 ◽  
Vol 15 (6) ◽  
pp. 558-563 ◽  
Author(s):  
Herman Carlo Floresca ◽  
Jangbae Jeon ◽  
Jinguo G. Wang ◽  
Moon J. Kim

AbstractWe have developed the focused ion beam (FIB) fold-out technique, for transmission electron microscopy (TEM) sample preparation in which there is no fine polishing or dimpling, thus saving turnaround time. It does not require a nanomanipulator yet is still site specific. The sample wafer is cut to shape, polished down, and then placed in a FIB system. A tab containing the area of interest is created by ion milling and then “folded out” from the bulk sample. This method also allows a plan-view of the sample by removing material below the wafer's surface film or device near the polished edge. In the final step, the sample is thinned to electron transparency, ready to be analyzed in the TEM. With both a cross section and plan-view, our technique gives microscopists a powerful tool in analyzing multiple zone axes in one TEM session. The nature of the polished sample edge also includes the ability to sample many areas, allowing the user to examine a very large device or sample. More importantly, this technique could make multiple site-specific e-beam transparent specimens in one polished sample, which is difficult to do when prepared by other methods.


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