Large Area Plan-View Transmission Electron Microscopy Sample Preparation for Direct-Bonded Interfaces

ABSTRACTWe have developed a new, minimal damage approach for examination of luminescent porous Si layers (PSLs) by transmission electron microscopy (TEM). In this approach, chemically etched PSLs are fabricated after conventional plan-view TEM sample preparation. A diffraction pattern consisting of a diffuse center spot, characteristic of amorphous material, is primarily observed. However, crystalline, microcrystalline, and amorphous regions could all be observed in selected areas. A crystalline mesh structure could be observed in some of the thin areas near the pinhole. The microcrystallite sizes were 15–150 Å and decreased in size when located further from the pinhole.

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Transmission electron microscopy sample preparation method for micrometer-sized powder particles using focused ion beam

Micron ◽

10.1016/j.micron.2021.103030 ◽

2021 ◽

Vol 143 ◽

pp. 103030

Author(s):

Tong Liu ◽

Hongyan Jin ◽

Leilei Xu ◽

Zengli Huang ◽

Haijun Chen ◽

...

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Sample Preparation ◽

Focused Ion Beam ◽

Preparation Method ◽

Ion Beam ◽

Transmission Electron Microscopy Sample ◽

Sample Preparation Method ◽

Transmission Electron ◽

Powder Particles

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Reducing of ion beam induced surface damaging using “low voltage” focused ion beam technique for transmission electron microscopy sample preparation

EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany ◽

10.1007/978-3-540-85156-1_343 ◽

2009 ◽

pp. 685-686

Author(s):

R. Salzer ◽

M. Simon ◽

A. Graff ◽

F. Altmann ◽

L. Pastewka ◽

...

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Sample Preparation ◽

Focused Ion Beam ◽

Low Voltage ◽

Ion Beam ◽

Transmission Electron Microscopy Sample ◽

Transmission Electron ◽

Beam Technique

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Transmission Electron Microscopy Sample Preparation By Design Based Recipe Writing in a DBFIB Part 2

ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2019p0470 ◽

2019 ◽

Author(s):

J. Demarest ◽

B. Austin ◽

J. Arjavac ◽

M. Breton ◽

M. Bergendahl ◽

...

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Sample Preparation ◽

Unique Feature ◽

Sample Thickness ◽

Transmission Electron Microscopy Sample ◽

Transmission Electron ◽

Placement Accuracy ◽

2D Arrays ◽

Scanning Electron

Abstract Demarest et al. concluded in their previous report that a ten times improvement in placement accuracy was required to enable automated transmission electron microscopy (TEM) sample preparation, and wafer alignment by GDS coordinates demonstrated a factor of two improvement in comparison to optical or scanning electron microscope based processes. This paper provides an additional update on this project. The study is about a GDS based process developed to simplify the complicated workflow for examining discrete electrical failures. The results of this study indicated that the recipe prototype developed on a test structure had a unique feature that consisted of an approximately 45nm by 200nm Cu line segment. Executing the prototype recipe on a wafer at the same process point fabricated 6 months after the original wafer yielded four identical successful samples of about 30nm sample thickness. This technique can thus be extended to large 2D arrays of small structures.

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