scholarly journals The Epitaxial Growth of Ge on Si(100) Using Te as a Surfactant

1993 ◽  
Vol 312 ◽  
Author(s):  
X. Yango ◽  
R. Cao ◽  
J. Li ◽  
J. Terry ◽  
J. Wu ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Layer Growth ◽  
Low Energy ◽  
Growth Mode ◽  
Layer By Layer ◽  
Cross Sectional ◽  
Low Energy Electron Diffraction ◽  
Transmission Electron ◽  
Layer Mode ◽  
Low Energy Electron

AbstractThe epitaxial growth of Ge on Si using Te as a surfactant has been studied with high resolution photoemission, low energy electron diffraction and cross-sectional transmission electron microscopy. The growth mode of Ge on Si changed from Stranski-Krastanov (S-K) to layer-by-layer mode when 1/4 ML Te atoms were on the surface. During the growth, Te atoms segregated to the top of the surface. If the growth temperature is too high (above ∼450°C), the Te coverage was less than that necessary to keep the layer-by-layer growth, and the growth mode of Ge on Si is still S-K.

Oblique-incidence Reflectivity Difference (OI-RD) and Leed Studies of Adsorption and Growth of Xe on Nb(110)

2003 ◽  
Vol 780 ◽  
Author(s):  
P. Thomas ◽  
E. Nabighian ◽  
M.C. Bartelt ◽  
C.Y. Fong ◽  
X.D. Zhu
Keyword(s):  
Transition Layer ◽  
Layer Growth ◽  
Flow Mode ◽  
Layer By Layer ◽  
Zeroth Order ◽  
Step Flow ◽  
Low Energy Electron Diffraction ◽  
Oriented Film ◽  
Low Energy Electron

AbstractWe studied adsorption, growth and desorption of Xe on Nb(110) using an in-situ obliqueincidence reflectivity difference (OI-RD) technique and low energy electron diffraction (LEED) from 32 K to 100 K. The results show that Xe grows a (111)-oriented film after a transition layer is formed on Nb(110). The transition layer consists of three layers. The first two layers are disordered with Xe-Xe separation significantly larger than the bulk value. The third monolayer forms a close packed (111) structure on top of the tensile-strained double layer and serves as a template for subsequent homoepitaxy. The adsorption of the first and the second layers are zeroth order with sticking coefficient close to one. Growth of the Xe(111) film on the transition layer proceeds in a step flow mode from 54K to 40K. At 40K, an incomplete layer-by-layer growth is observed while below 35K the growth proceeds in a multilayer mode.

Interaction of Pt Films With ZnO(0001) and ZnO(0001)

1994 ◽  
Vol 357 ◽  
Author(s):  
W.T. Petrie ◽  
J.M. Vohs
Keyword(s):  
Low Energy ◽  
Layer By Layer ◽  
Electronic Interactions ◽  
Low Energy Electron Diffraction ◽  
Growth Structure ◽  
Barrier Formation ◽  
Resolution Electron ◽  
Low Energy Electron ◽  
Pt Films ◽  
Electron Energy Loss

AbstractThe growth, structure, and electronic properties of Pt films supported on the (0001) and (0001) surfaces of ZnO were investigated using high-resolution electron energy-loss spectroscopy (HREELS) and low-energy electron diffraction (LEED). Vapor-deposited Pt films were found to grow in a layer-by-layer fashion on both surfaces and exhibited hexagonal LEED patterns. HREELS results indicate that there are only weak electronic interactions at the Pt/ZnO(0001) interface, while charge transfer and Schottky barrier formation occurs at the Pt/ZnO(0001) interface.

Initial Growth of Co on Cu{001} Studied with LEED I(V)

2003 ◽  
Vol 10 (04) ◽  
pp. 641-648 ◽  
Author(s):  
J. Sainio ◽  
E. Alshamaileh ◽  
J. Lahtinen ◽  
C. J. Barnes
Keyword(s):  
Layer Growth ◽  
Layer By Layer ◽  
Initial Growth ◽  
Matrix Approximation ◽  
Low Energy Electron Diffraction ◽  
Disordered Alloys ◽  
Random Alloy ◽  
Low Energy Electron ◽  
Temperature Programmed ◽  
Model Structures

The initial growth of Co deposited at room temperature on Cu{001} was studied with low energy electron diffraction (LEED) and temperature-programmed desorption (TPD). Measured I(V) spectra were compared with calculated spectra from several model structures, including substitutionally disordered alloys. The averaged T-matrix approximation (ATA) was used to model the random alloy layers. According to the I(V) analysis, alloying occurs in the first stages of the growth. TPD of CO indicates that both large areas of Co and areas of a surface alloy are already present at the lowest coverage. Both methods show that a transition to layer-by-layer growth occurs as the coverage increases.

Sign in / Sign up

Export Citation Format

Share Document