Oblique-incidence Reflectivity Difference (OI-RD) and Leed Studies of Adsorption and Growth of Xe on Nb(110)

2003 ◽  
Vol 780 ◽  
Author(s):  
P. Thomas ◽  
E. Nabighian ◽  
M.C. Bartelt ◽  
C.Y. Fong ◽  
X.D. Zhu
Keyword(s):  
Transition Layer ◽  
Layer Growth ◽  
Flow Mode ◽  
Layer By Layer ◽  
Zeroth Order ◽  
Step Flow ◽  
Low Energy Electron Diffraction ◽  
Oriented Film ◽  
Low Energy Electron

AbstractWe studied adsorption, growth and desorption of Xe on Nb(110) using an in-situ obliqueincidence reflectivity difference (OI-RD) technique and low energy electron diffraction (LEED) from 32 K to 100 K. The results show that Xe grows a (111)-oriented film after a transition layer is formed on Nb(110). The transition layer consists of three layers. The first two layers are disordered with Xe-Xe separation significantly larger than the bulk value. The third monolayer forms a close packed (111) structure on top of the tensile-strained double layer and serves as a template for subsequent homoepitaxy. The adsorption of the first and the second layers are zeroth order with sticking coefficient close to one. Growth of the Xe(111) film on the transition layer proceeds in a step flow mode from 54K to 40K. At 40K, an incomplete layer-by-layer growth is observed while below 35K the growth proceeds in a multilayer mode.

Initial Growth of Co on Cu{001} Studied with LEED I(V)

2003 ◽  
Vol 10 (04) ◽  
pp. 641-648 ◽  
Author(s):  
J. Sainio ◽  
E. Alshamaileh ◽  
J. Lahtinen ◽  
C. J. Barnes
Keyword(s):  
Layer Growth ◽  
Layer By Layer ◽  
Initial Growth ◽  
Matrix Approximation ◽  
Low Energy Electron Diffraction ◽  
Disordered Alloys ◽  
Random Alloy ◽  
Low Energy Electron ◽  
Temperature Programmed ◽  
Model Structures

The initial growth of Co deposited at room temperature on Cu{001} was studied with low energy electron diffraction (LEED) and temperature-programmed desorption (TPD). Measured I(V) spectra were compared with calculated spectra from several model structures, including substitutionally disordered alloys. The averaged T-matrix approximation (ATA) was used to model the random alloy layers. According to the I(V) analysis, alloying occurs in the first stages of the growth. TPD of CO indicates that both large areas of Co and areas of a surface alloy are already present at the lowest coverage. Both methods show that a transition to layer-by-layer growth occurs as the coverage increases.

scholarly journals The Epitaxial Growth of Ge on Si(100) Using Te as a Surfactant

1993 ◽  
Vol 312 ◽  
Author(s):  
X. Yango ◽  
R. Cao ◽  
J. Li ◽  
J. Terry ◽  
J. Wu ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Layer Growth ◽  
Low Energy ◽  
Growth Mode ◽  
Layer By Layer ◽  
Cross Sectional ◽  
Low Energy Electron Diffraction ◽  
Transmission Electron ◽  
Layer Mode ◽  
Low Energy Electron

AbstractThe epitaxial growth of Ge on Si using Te as a surfactant has been studied with high resolution photoemission, low energy electron diffraction and cross-sectional transmission electron microscopy. The growth mode of Ge on Si changed from Stranski-Krastanov (S-K) to layer-by-layer mode when 1/4 ML Te atoms were on the surface. During the growth, Te atoms segregated to the top of the surface. If the growth temperature is too high (above ∼450°C), the Te coverage was less than that necessary to keep the layer-by-layer growth, and the growth mode of Ge on Si is still S-K.

Atomic Layer and Unit-Cell Layer Growth of (Ca,Sr)CuO2 and Bi2Sr2Can-1CunO2n+4 Thin Films by Laser Molecular Bean Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
Masaki Kanai ◽  
Tomoji Kawai ◽  
Takuya Matsumoto ◽  
Shichio Kawai
Keyword(s):  
Thin Films ◽  
Diffraction Pattern ◽  
Cell Layer ◽  
Atomic Layer ◽  
High Energy ◽  
Layer Growth ◽  
Unit Cell ◽  
Layer By Layer ◽  
Diffraction Intensity

ABSTRACTThin films of (Ca,Sr)CuO2 and Bi2Sr2Can-1CunO2n+4 are formed by laser molecular beam epitaxy with in-situ reflection high energy electron diffraction observation. The diffraction pattern shows that these materials are formed with layer-by-layer growth. The change of the diffraction intensity as well as the analysis of the total diffraction pattern makes It possible to control the grown of the atomic layer or the unit-cell layer.

Growth of MBE-Codeposited IrSi3 on Si(111) and Si(100)

1994 ◽  
Vol 299 ◽  
Author(s):  
Gary A. Gibson ◽  
Davis A. Lange ◽  
Charles M. Falco
Keyword(s):  
Ion Beam ◽  
Silicide Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Growth Modes ◽  
Transmission Electron ◽  
Low Energy Electron

AbstractWe have used Molecular Beam Epitaxy (MBE) to successfully grow films that are predominantly IrSi3 on both Si(111) and Si(100) substrates by codeposition of Si and Ir in a 3:1 ratio. Bragg-Brentano and Seemann-Bohlin x-ray diffraction reveal that polycrystalline IrSi3 films form as low as 450 °C. This is the lowest temperature yet reported for growth of this iridium silicide phase. These x-ray diffraction techniques, along with Transmission Electron Microscope (TEM) diffraction and in situ Low Energy Electron Diffraction (LEED), show that at higher deposition temperatures codeposition can form IrSi3 films on Si(111) that consist predominantly of a single epitaxial growth orientation. Ion beam channeling and x-ray rocking curves show that the epitaxial quality of IrSi3 films deposited on Si(111) is superior to that of IrSi3 films deposited on Si(100). We also present evidence for several new epitaxial IrSi3 growth modes on Si(111) and Si(100).

Interaction of Pt Films With ZnO(0001) and ZnO(0001)

1994 ◽  
Vol 357 ◽  
Author(s):  
W.T. Petrie ◽  
J.M. Vohs
Keyword(s):  
Low Energy ◽  
Layer By Layer ◽  
Electronic Interactions ◽  
Low Energy Electron Diffraction ◽  
Growth Structure ◽  
Barrier Formation ◽  
Resolution Electron ◽  
Low Energy Electron ◽  
Pt Films ◽  
Electron Energy Loss

AbstractThe growth, structure, and electronic properties of Pt films supported on the (0001) and (0001) surfaces of ZnO were investigated using high-resolution electron energy-loss spectroscopy (HREELS) and low-energy electron diffraction (LEED). Vapor-deposited Pt films were found to grow in a layer-by-layer fashion on both surfaces and exhibited hexagonal LEED patterns. HREELS results indicate that there are only weak electronic interactions at the Pt/ZnO(0001) interface, while charge transfer and Schottky barrier formation occurs at the Pt/ZnO(0001) interface.

In-Situ Studies of the Formation of GA and AL Wires on SI(112) Facet Surfaces

1999 ◽  
Vol 570 ◽  
Author(s):  
S.M. Prokes ◽  
O.J. Glembocki
Keyword(s):  
Light Scattering ◽  
Electron Diffraction ◽  
Rapid Change ◽  
Low Energy ◽  
Chemical Sensitivity ◽  
Low Energy Electron Diffraction ◽  
Sequential Deposition ◽  
Low Energy Electron ◽  
Metallic Wires

ABSTRACTReflectance difference anisotropy (RDA) and low energy electron diffraction (LEED)have been used to study the formation of Ga or Al chains and nanowires on the Si(112) surface. At T > 350°C, the Ga or Al chains form at the step edges by a self-limiting process, while at lower temperatures, Ga or Al nanowires form on the terraces in addition to the chains on the ledges. The process has been tracked in real time from the rapid change of the (2×1) Si(112) reconstruction under subcritical coverage to chain formation leading to a 5×1 reconstruction followed by a 6×1 reconstruction’. During sequential deposition of Ga and Al, we observe (in RDA and AES) that Ga atoms forming the chains can be replaced by Al, indicating a stronger Al-Si bond strength and confirming the chemical sensitivity of the light scattering in RDA. Low temperature depositions (in the 300’C range) are shown to lead to the formation of Al (or Ga) metallic wires on the Si(111) terraces. Continued deposition of less than 10 monolayers at T below 250°C leads to a very anisotropic but patterned Al or Ga structure in registry with the substrate which retains an unexpectedly large polarizability for coverages as thick as 40 ml.

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