Characterization of Cd1-x ZnxTe Alloys Using Infrared Reflectivity and Raman Scattering Spectroscopy

1993 ◽  
Vol 324 ◽  
Author(s):  
D. N. Talwar ◽  
Z. C. Feng ◽  
P. Becla

AbstractStudy of impurity-induced phonon disordering in Cdl-xZnxTe alloys is reported for a variety of samples by using far-infrared reflectivity and Raman scattering spectroscopy. Substantial differences were noted among the various published values for the optical phonon frequencies versus x. Contrary to an earlier Raman study on MBE grown Cdl-xZnxTe/GaAs films, our results within a twomode behavior, yield an increase of both the CdTe- and ZnTe-like transverse optical phonons with x. Unlike earlier speculations for a gap-mode in ZnTe : Cd of ∼140∼145 cm−1, our Greens function theory predicts it to be at a relatively higher frequency of ∼153 cm−1.

1990 ◽  
Vol 5 (3S) ◽  
pp. S68-S72 ◽  
Author(s):  
P M Amirtharaj ◽  
N K Dhar ◽  
J Baars ◽  
H Seelewind

1996 ◽  
Vol 16 (11) ◽  
pp. 1157-1161 ◽  
Author(s):  
Hideyuki Kanai ◽  
Yohachi Yamashita ◽  
Masato Kakihana ◽  
Masahiro Yoshimura

2016 ◽  
Vol 18 (7) ◽  
pp. 5397-5403 ◽  
Author(s):  
Christoph J. Sahle ◽  
Simon Kujawski ◽  
Arndt Remhof ◽  
Yigang Yan ◽  
Nicholas P. Stadie ◽  
...  

We present an in situ study of the thermal decomposition of Mg(BH4)2 in a hydrogen atmosphere of up to 4 bar and up to 500 °C using X-ray Raman scattering spectroscopy at the boron K-edge and the magnesium L2,3-edges.


2000 ◽  
Vol 220 (1) ◽  
pp. 373-376 ◽  
Author(s):  
N.E. Massa ◽  
R.G. Pregliasco ◽  
A. Fainstein ◽  
H. Salva ◽  
J.A. Alonso ◽  
...  

1973 ◽  
Vol 13 (4) ◽  
pp. 321-326 ◽  
Author(s):  
S. Perkowitz ◽  
J. Breecher

2008 ◽  
Vol 600-603 ◽  
pp. 501-504 ◽  
Author(s):  
T. Kitamura ◽  
Shinichi Nakashima ◽  
Tomohisa Kato ◽  
K. Kojima ◽  
Hajime Okumura

We characterized the 4H- and 6H-SiC bulk crystals with graded doping and epitaxial films with various carrier densities by Raman scattering spectroscopy. Electrical properties such as free carrier density were examined for the SiC crystals through Raman measurements of the A1 LO-phonon plasmon coupled (LOPC) mode and its line shape analysis. The peak frequency and band width of LOPC mode varied with carrier density in the range from 1016 to 1019 cm-3. The line shape analysis revealed that the carrier density in the SiC crystals can be simply estimated from measured frequency shift of LOPC mode for 4H- and 6H-SiC crystals.


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