Ambient Temperature–Corrected Mechanical Stress Mapping of Gallium Nitride and Aluminum Indium Gallium Phosphide Films by Raman Scattering Spectroscopy for Characterization of Light‐Emitting Diodes
1989 ◽
Vol 28
(Part 2, No. 8)
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pp. L1337-L1340
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Keyword(s):
1996 ◽
Vol 16
(11)
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pp. 1157-1161
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Keyword(s):
2016 ◽
Vol 18
(7)
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pp. 5397-5403
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2011 ◽
Vol 21
(3)
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pp. 3352-3355
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2008 ◽
Vol 600-603
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pp. 501-504
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