Characterization of Copper Indium Diselenide Thin Films by Raman Scattering Spectroscopy for Solar Cell Applications

1989 ◽  
Vol 28 (Part 2, No. 8) ◽  
pp. L1337-L1340 ◽  
Author(s):  
Satoshi Yamanaka ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
1994 ◽  
Vol 29 (2) ◽  
pp. 195-202 ◽  
Author(s):  
R. Jeyakumar ◽  
S. Ramamurthy ◽  
M. Jayachandran ◽  
Mary Juliana Chockalingam

1993 ◽  
Vol 48 (6) ◽  
pp. 697-704 ◽  
Author(s):  
H. P. Fritz ◽  
E. Pöll

Structural properties for Cu—In—Se thin-films for solar cell applications formed by electrochemical deposition at room temperature were studied using Raman-scattering. Reactions among Cu, In and Se to binary compounds and CuInSe2, respectively, were observed. It is concluded that Raman scattering spectroscopy only at low temperature conditions shows the real composition of the electrochemically deposited Cu—In—Se layer. It was also found by Raman spectroscopy that the CuInSe, phase is formed by annealing as-deposited Cu—In—Se thin films preferentially at temperatures around 400°C under selenium vapour pressure.


2017 ◽  
Vol 110 ◽  
pp. 180-187 ◽  
Author(s):  
Kiran Diwate ◽  
Kakasaheb Mohite ◽  
Manish Shinde ◽  
Sachin Rondiya ◽  
Amit Pawbake ◽  
...  

2016 ◽  
Vol 390 ◽  
pp. 393-398 ◽  
Author(s):  
N. Ali ◽  
A. Hussain ◽  
R. Ahmed ◽  
W.N. Wan Shamsuri ◽  
Y.Q. Fu

Sign in / Sign up

Export Citation Format

Share Document