Characterization of grain boundary phase of a lead-based relaxor by raman scattering spectroscopy

1996 ◽  
Vol 16 (11) ◽  
pp. 1157-1161 ◽  
Author(s):  
Hideyuki Kanai ◽  
Yohachi Yamashita ◽  
Masato Kakihana ◽  
Masahiro Yoshimura
Keyword(s):  
Grain Boundary ◽  
Raman Scattering ◽  
Boundary Phase ◽  
Raman Scattering Spectroscopy

Characterization of intergranular cuprous oxide in polycrystalline YBa2Cu3O7-x

1988 ◽  
Vol 46 ◽  
pp. 880-881
Author(s):  
Bradley L. Thiel ◽  
Chan Han R. P. ◽  
Kurosky L. C. Hutter ◽  
I. A. Aksay ◽  
Mehmet Sarikaya
Keyword(s):  
Grain Boundary ◽  
Cuprous Oxide ◽  
Room Temperature ◽  
Boundary Phase ◽  
Spectroscopic Techniques ◽  
Transition Width ◽  
Practical Applications ◽  
Thin Foils ◽  
Superconducting Oxides

The identification of extraneous phases is important in understanding of high Tc superconducting oxides. The spectroscopic techniques commonly used in determining the origin of superconductivity (such as RAMAN, XPS, AES, and EXAFS) are surface-sensitive. Hence a grain boundary phase several nanometers thick could produce irrelevant spectroscopic results and cause erroneous conclusions. The intergranular phases present a major technological consideration for practical applications. In this communication we report the identification of a Cu2O grain boundary phase which forms during the sintering of YBa2Cu3O7-x (1:2:3 compound).Samples are prepared using a mixture of Y2O3. CuO, and BaO2 powders dispersed in ethanol for complete mixing. The pellets pressed at 20,000 psi are heated to 950°C at a rate of 5°C per min, held for 1 hr, and cooled at 1°C per min to room temperature. The samples show a Tc of 91K with a transition width of 2K. In order to prevent damage, a low temperature stage is used in milling to prepare thin foils which are then observed, using a liquid nitrogen holder, in a Philips 430T at 300 kV.

scholarly journals In situ characterization of the decomposition behavior of Mg(BH4)2 by X-ray Raman scattering spectroscopy

2016 ◽  
Vol 18 (7) ◽  
pp. 5397-5403 ◽  
Author(s):  
Christoph J. Sahle ◽  
Simon Kujawski ◽  
Arndt Remhof ◽  
Yigang Yan ◽  
Nicholas P. Stadie ◽  
...  
Keyword(s):  
Thermal Decomposition ◽  
Raman Scattering ◽  
Hydrogen Atmosphere ◽  
In Situ Characterization ◽  
Raman Scattering Spectroscopy ◽  
X Ray ◽  
Decomposition Behavior

We present an in situ study of the thermal decomposition of Mg(BH4)2 in a hydrogen atmosphere of up to 4 bar and up to 500 °C using X-ray Raman scattering spectroscopy at the boron K-edge and the magnesium L2,3-edges.

Characterization of Cd1-x ZnxTe Alloys Using Infrared Reflectivity and Raman Scattering Spectroscopy

1993 ◽  
Vol 324 ◽  
Author(s):  
D. N. Talwar ◽  
Z. C. Feng ◽  
P. Becla
Keyword(s):  
Raman Scattering ◽  
Function Theory ◽  
Far Infrared ◽  
Raman Scattering Spectroscopy ◽  
Infrared Reflectivity ◽  
Gaas Films ◽  
Raman Study ◽  
Greens Function ◽  
Gap Mode

AbstractStudy of impurity-induced phonon disordering in Cdl-xZnxTe alloys is reported for a variety of samples by using far-infrared reflectivity and Raman scattering spectroscopy. Substantial differences were noted among the various published values for the optical phonon frequencies versus x. Contrary to an earlier Raman study on MBE grown Cdl-xZnxTe/GaAs films, our results within a twomode behavior, yield an increase of both the CdTe- and ZnTe-like transverse optical phonons with x. Unlike earlier speculations for a gap-mode in ZnTe : Cd of ∼140∼145 cm−1, our Greens function theory predicts it to be at a relatively higher frequency of ∼153 cm−1.

Characterization of Electrical Properties in SiC Crystals by Raman Scattering Spectroscopy

2008 ◽  
Vol 600-603 ◽  
pp. 501-504 ◽  
Author(s):  
T. Kitamura ◽  
Shinichi Nakashima ◽  
Tomohisa Kato ◽  
K. Kojima ◽  
Hajime Okumura
Keyword(s):  
Electrical Properties ◽  
Raman Scattering ◽  
Shape Analysis ◽  
Line Shape ◽  
Carrier Density ◽  
Peak Frequency ◽  
Bulk Crystals ◽  
Raman Scattering Spectroscopy ◽  
Line Shape Analysis

We characterized the 4H- and 6H-SiC bulk crystals with graded doping and epitaxial films with various carrier densities by Raman scattering spectroscopy. Electrical properties such as free carrier density were examined for the SiC crystals through Raman measurements of the A1 LO-phonon plasmon coupled (LOPC) mode and its line shape analysis. The peak frequency and band width of LOPC mode varied with carrier density in the range from 1016 to 1019 cm-3. The line shape analysis revealed that the carrier density in the SiC crystals can be simply estimated from measured frequency shift of LOPC mode for 4H- and 6H-SiC crystals.

Quantitative Characterization of Individual Microdroplets using Surface-Enhanced Resonance Raman Scattering Spectroscopy

2012 ◽  
Vol 84 (3) ◽  
pp. 1491-1495 ◽  
Author(s):  
Christopher D. Syme ◽  
Chiara Martino ◽  
Rama Yusvana ◽  
Narayana M. S. Sirimuthu ◽  
Jonathan M. Cooper
Keyword(s):  
Raman Scattering ◽  
Resonance Raman ◽  
Resonance Raman Scattering ◽  
Quantitative Characterization ◽  
Raman Scattering Spectroscopy ◽  
Surface Enhanced
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