Polyaniline Surface Morphology During The Doping Process Using Atomic Force Microscopy

1993 ◽  
Vol 328 ◽  
Author(s):  
Leonard J. Buckley

ABSTRACTChemically synthesized polyaniline films were studied during the doping and dedoping process by imaging the polymer surface using in-situ Atomic Force Microscopy (AFM). The polymer, which was initially in the base non-conducting form was doped using aqueous acidic solutions of both tosylic (pH=0.2) and HCl (pH of 0.2 and 1.0). Dedoping was accomplished by exposing the same doped polymer surface to NH4OH (pH=12) base solution. AFM images showed that it was necessary to cycle the polymer surface 3 times between acid and base before a reproducible surface morphology was established between the doped and dedoped states. For the case of doping with tosylic acid AFM images showed that the polyaniline surface was immediately roughened. In addition there appeared to be an increase in the size of surface channels and cracks. When doping with HC1 (pH=1.0), no change in surface morphology was observed; however, noticeable surface roughening occurred over 10 Minutes for the case of the lower pH=0.2 solution. The complex permittivity and DC conductivity was measured to estimate the level of protonation in the AFM samples.

1992 ◽  
Author(s):  
Mark R. Kozlowski ◽  
Michael C. Staggs ◽  
Mehdi Balooch ◽  
Robert J. Tench ◽  
Wigbert J. Siekhaus

1995 ◽  
Vol 413 ◽  
Author(s):  
V. Shivshankar ◽  
C. Sung ◽  
J. Kumar ◽  
S. K. Tripathy ◽  
D. J. Sandman

ABSTRACTWe have studied the surface morphology of free standing single crystals of thermochromic polydiacetylenes (PDAs), namely, ETCD and IPUDO (respectively, the ethyl and isopropyl urethanes of 5,7-dodecadiyn-1,12-diol), by Atomic Force Microscopy (AFM) under ambient conditions. Micron scale as well as molecularly resolved images were obtained. The micron scale images indicate a variable surface, and the molecularly resolved images show a well defined 2-D lattice that is interpreted in terms of molecular models and known crystallographic data. Thereby information about surface morphology, which is crucial to potential optical device or chromic sensor performance is available. We also report the observation of a “macroscopic shattering” of the IPUDO monomer crystal during in-situ UV polymerization studies.


2002 ◽  
Vol 09 (05n06) ◽  
pp. 1729-1733
Author(s):  
W. LOPERA ◽  
D. GIRATÁ ◽  
F. PÉREZ ◽  
L. F. CASTRO ◽  
E. BACA ◽  
...  

Surface topography on epitaxial HoBa 2 Cu 3 O 7-δ (HBCO) and Bi 2 Sr 2 CaCu 2 O 8+δ (BSCCO) thin films analysis by using the atomic force microscopy (AFM) technique was carried out. The films were deposited in situ on SrTiO 3 substrates with thicknesses ranging from 100 to 300 nm by a high-pressure sputtering process. Chemical etching with a nonaqueous solution of Br-ethanol was used to modify the surface of the samples. HBCO films showed spiral grains, while BSCCO samples exhibited a terraced growth. Etching with Br-ethanol has different effects on HBCO and BSCCO. In HBCO, etching produces clean surfaces with light changes on the surface morphology, whereas in BSCCO it conduces to strong changes in the structure and the roughness of the film surface.


2019 ◽  
Vol 954 ◽  
pp. 21-25
Author(s):  
Zhi Fei Zhao ◽  
Yun Li ◽  
Yi Wang ◽  
Ping Zhou ◽  
Wu Yun ◽  
...  

The morphology of the in-situ etching process on Si-face and C-face 4H-SiC, by annealing in a hydrogen environment, is studied by atomic force microscopy (AFM). The uniform step-terrace morphology of both the Si-face and C-face 4H-SiC is achieved with the assistance of carbon/silicon flux. The full width at half maximum (FWHM) of Raman 2D peak for the graphene grown on the uniform step-terrace morphology of the Si-face and C-face is 36.2 and 22 cm-1, respectively.


1995 ◽  
Vol 73 (3) ◽  
pp. 205-208 ◽  
Author(s):  
Jamshid K. Avlyanov ◽  
Jack Y. Josefowicz ◽  
Alan G. MacDiarmid

1998 ◽  
Vol 66 (7) ◽  
pp. S591-S596 ◽  
Author(s):  
F. Tian ◽  
C. Wang ◽  
Z. Lin ◽  
J.W. Li ◽  
C.L. Bai

1999 ◽  
Vol 353 (1-2) ◽  
pp. 194-200 ◽  
Author(s):  
C. Coupeau ◽  
J.F. Naud ◽  
F. Cleymand ◽  
P. Goudeau ◽  
J. Grilhé

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