Grain Boundary Phase Analysis of Silicon Nitride by a Newly
Developed 300kv Field-Emission Electron Microscope
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ABSTRACTThe grain boundary phase of silicon nitride containing additives Y2O3 and Nd2O3 has been studied by means of a newly developed 300kV field emission ATEM. The composition of the two-grain boundary phase of about 1 nm thick is successfully determined. It is then found that the compositions among the grain boundaries are not the same and the additives of Y2O3-Nd2O3 are poor in the two-grain boundary, while they are rich in the triple points.
1975 ◽
Vol 33
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pp. 144-145
1975 ◽
Vol 33
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pp. 60-61
1955 ◽
Vol 23
(7)
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pp. 1323-1330
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1995 ◽
Vol 14
(19)
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pp. 1362-1365
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1991 ◽
Vol 05
(19)
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pp. 2989-3028
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2006 ◽
Vol 45
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pp. 148-155
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