Observation of Semiconductor Superstructures With Backscattered Electrons in a Scanning Electron Microscope
Keyword(s):
AbstractObservations of semiconductor superstructures with backscattered electrons in a scanning electron microscope have been used to revisit the concept of resolution of the backscattering imaging mode. It will be shown that the generation volume doesn't represent in itself a limit to the resolution, which depends only on the beam size and the signal to noise ratio.
1985 ◽
Vol 18
(7)
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pp. 598-603
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2000 ◽
Vol 199
(2)
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pp. 115-123
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