Surface Effects During Ion Beam Processing of Materials

1995 ◽  
Vol 396 ◽  
Author(s):  
R.S. Averback ◽  
Mai Ghaly ◽  
H. Zhu

AbstractMicrostructural changes of surfaces during ion implantation have been investigated on the atomic level by molecular dynamics computer simulations. Unlike past surface studies, which have been focused on the problem of sputtering, the current work examines the effects of collective materials response on surface topography. Collective behavior has been noted for the crystal interior in the context of thermal spikes, but we show here that it can lead to far more dramatic consequences at the surface. The investigation includes implantation in several metals, but emphasizing Pt, Si and Ge. In addition, the study includes the first simulations of implantations of a metallic glass, CuTi, and amorphous Si.

1991 ◽  
Vol 230 ◽  
Author(s):  
Tomonori Yamaoka ◽  
Keiji Oyoshi ◽  
Takashi Tagami ◽  
Yasunori Arima ◽  
Shuhei Tanaka

AbstractCrystallization of amorphous Si films on a glass substrate using Si+ ion implantation is investigated. 100keV and 180keV Si+ ion implantations into 600nm-thick amorphous Si layers crystallize half and almost all of the film thicknesses, respectively. This result demonstrates that crystallization by ion implantation, which contains both crystal nucleation and grain growth, is due to ion-solid interaction, and not to “pure” thermal effect by ion beam heating. Furthermore, two distinct regions are observed in transmission electron microscopy investigation of grain size at different depths of crystallized Si/SiO2 multi-layer specimens. The deep region below the projected range is composed of grains smaller than in the shallow region. This result is strongly related with crystal nucleation and growth kinetics by ion implantation.


2016 ◽  
Vol 443 ◽  
pp. 136-142 ◽  
Author(s):  
S. Trady ◽  
M. Mazroui ◽  
A. Hasnaoui ◽  
K. Saadouni

Author(s):  
P.G. Pawar ◽  
P. Duhamel ◽  
G.W. Monk

A beam of ions of mass greater than a few atomic mass units and with sufficient energy can remove atoms from the surface of a solid material at a useful rate. A system used to achieve this purpose under controlled atmospheres is called an ion miliing machine. An ion milling apparatus presently available as IMMI-III with a IMMIAC was used in this investigation. Unless otherwise stated, all the micro milling operations were done with Ar+ at 6kv using a beam current of 100 μA for each of the two guns, with a specimen tilt of 15° from the horizontal plane.It is fairly well established that ion bombardment of the surface of homogeneous materials can produce surface topography which resembles geological erosional features.


2021 ◽  
Vol 182 ◽  
pp. 109275
Author(s):  
Mao Zhang ◽  
Hongjun Cai ◽  
Jiacheng Zhang ◽  
Qiaomin Li ◽  
Ying Wang ◽  
...  

2021 ◽  
Author(s):  
Hongyu Jiang ◽  
Jiyu Xu ◽  
Qinghua Zhang ◽  
Qian Yu ◽  
Laiquan Shen ◽  
...  

2010 ◽  
Vol 64 (1) ◽  
pp. 96-98 ◽  
Author(s):  
T.L. Wang ◽  
W.T. Huang ◽  
W.C. Wang ◽  
B.X. Liu

1996 ◽  
Vol 436 ◽  
Author(s):  
J. N. Glosli ◽  
M. R. Philpott ◽  
J. Belak

AbstractMolecular dynamics computer simulations are used to study the effect of substrate temperature on the microstructure of deposited amorphous hydrogenated carbon (a:CH) films. A transition from dense diamond-like films to porous graphite-like films is observed between substrate temperatures of 400K and 600K for a deposition energy of 20 eV. The dense a:CH film grown at 300K and 20 eV has a hardness (˜50 GPa) about half that of a pure carbon (a:C) film grown under the same conditions.


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