Crystal Nucleation in Amorphous Si Films on Glass Substrate by Si+ Ion Implantation

1991 ◽  
Vol 230 ◽  
Author(s):  
Tomonori Yamaoka ◽  
Keiji Oyoshi ◽  
Takashi Tagami ◽  
Yasunori Arima ◽  
Shuhei Tanaka
Keyword(s):  
Ion Implantation ◽  
Glass Substrate ◽  
Ion Beam ◽  
Crystal Nucleation ◽  
Projected Range ◽  
Transmission Electron ◽  
Microscopy Investigation ◽  
Amorphous Si ◽  
Si Films ◽  
Almost All

AbstractCrystallization of amorphous Si films on a glass substrate using Si+ ion implantation is investigated. 100keV and 180keV Si+ ion implantations into 600nm-thick amorphous Si layers crystallize half and almost all of the film thicknesses, respectively. This result demonstrates that crystallization by ion implantation, which contains both crystal nucleation and grain growth, is due to ion-solid interaction, and not to “pure” thermal effect by ion beam heating. Furthermore, two distinct regions are observed in transmission electron microscopy investigation of grain size at different depths of crystallized Si/SiO2 multi-layer specimens. The deep region below the projected range is composed of grains smaller than in the shallow region. This result is strongly related with crystal nucleation and growth kinetics by ion implantation.

Crystal Nucleation in Amorphous Si Thin Films During Ion Irradiation

1990 ◽  
Vol 187 ◽  
Author(s):  
James S. Im ◽  
Harry A. Atwater
Keyword(s):  
Nucleation Rate ◽  
Ion Irradiation ◽  
High Energy ◽  
Crystal Nucleation ◽  
Transmission Electron ◽  
Crystal Transition ◽  
Amorphous Si ◽  
Si Films ◽  
Kinetics Of

AbstractThe nucleation and transformation kinetics of the amorphous-to-crystal transition in Si films under 1.5 MeV Xe+ irradiation have been investigated by means of in situ transmission electron microscopy in the temperature range T = 480–580°C. After an incubation period during which negligible nucleation occurs, a constant nucleation rate was observed in steady state, suggesting homogeneous nucleation. A significant enhancement in nucleation rate during high energy ion irradiation (6 orders of magnitude) was observed as compared with thermal crystallization, with an apparent activation energy of Qn = 3.9 ± 0.75 eV. Independent analyses of the temperature dependence of the incubation time, the crystal growth rate, and nucleation rate suggest that interface rearrangement kinetics and not the thermodynamic barrier to crystallization, are affected by ion irradiation.

Lateral Solid Phase Epitaxy of Evaporated Amorphous Si Films onto SiO2 Patterns

1983 ◽  
Vol 25 ◽  
Author(s):  
H. Yamamoto ◽  
H. Ishiwara ◽  
S. Furukawa ◽  
M. Tamura ◽  
T. Tokuyama
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Si Substrates ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Si Films ◽  
Kinetics Of

ABSTRACTLateral solid phase epitaxy (L-SPE) of amorphous Si (a-Si) films vacuum-evaporated on Si substrates with SiO2 patterns has been investigated, in which the film first grows vertically in the regions directly contacted to the Si substrates and then grows laterally onto SiO2 patterns. It has been found from transmission electron microscopy and Nomarski optical microscopy that use of dense a-Si films, which are formed by evaporation on heated substrates and subsequent amorphization by Si+ ion implantation, is essentially important for L-SPE. The maximum L-SPE length of 5–6μm was obtained along the <010> direction after 10hourannealing at 600°C. The kinetics of the L-SPE growth has also been investigated.

Nucleation And Growth Rates in Isothermal Crystallization Op Amorphous Si50Ge50 Films

1993 ◽  
Vol 321 ◽  
Author(s):  
J. H. Song ◽  
James S. Im
Keyword(s):  
Growth Rate ◽  
Nucleation Rate ◽  
Growth Rates ◽  
Isothermal Crystallization ◽  
Nucleation And Growth ◽  
Crystal Nucleation ◽  
Two Dimensional ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Si Films

ABSTRACTIsothermal crystallization behavior of as-deposited thin amorphous Si50Ge50 films (∼1000Å-thick) at 580°C has been investigated using transmission electron Microscopy (TEM). The crystal counting method was employed in order to obtain directly the two-dimensional steady-state crystal nucleation rate of 3.9×103 #/cm2sec (equivalent volumetric nucleation rate of 3.4×108 #/cm3sec). The Modified two-dimensional Johnson-Mehl-Avrami analysis, in which the growth rate of the crystals was the only adjustable parameter, and in which the time-dependent nucleation rate and the size effect associated with the onset of the observation are considered, was developed in order to extract the crystal growth rate of 16.5 Å/sec. When compared to the crystallization of a-Si films, these nucleation and growth rates confirm the observation that it is possible to achieve significantly faster crystallization at lower temperatures while producing substantially better Microstructures (i.e., > 5 μ grain-sized poly-Si50Ge50 obtained within two hours at 580°C vs. 1–2Μm grain-sized poly-Si obtained in about > 10 hours at 600°C).

Growth of near noble metal Pd and Pt thin film silicides morphology and structure

1984 ◽  
Vol 42 ◽  
pp. 498-499
Author(s):  
E. I. Alessandrini ◽  
M. O. Aboelfotoh
Keyword(s):  
Noble Metals ◽  
Annealing Temperature ◽  
Chemical Compounds ◽  
Barrier Properties ◽  
Solid State Reactions ◽  
Transmission Electron ◽  
Stable Chemical ◽  
Metal Thickness ◽  
Amorphous Si ◽  
Si Films

Considerable interest has been generated in solid state reactions between thin films of near noble metals and silicon. These metals deposited on Si form numerous stable chemical compounds at low temperatures and have found applications as Schottky barrier contacts to silicon in VLSI devices. Since the very first phase that nucleates in contact with Si determines the barrier properties, the purpose of our study was to investigate the silicide formation of the near noble metals, Pd and Pt, at very thin thickness of the metal films on amorphous silicon.Films of Pd and Pt in the thickness range of 0.5nm to 20nm were made by room temperature evaporation on 40nm thick amorphous Si films, which were first deposited on 30nm thick amorphous Si3N4 membranes in a window configuration. The deposition rate was 0.1 to 0.5nm/sec and the pressure during deposition was 3 x 10 -7 Torr. The samples were annealed at temperatures in the range from 200° to 650°C in a furnace with helium purified by hot (950°C) Ti particles. Transmission electron microscopy and diffraction techniques were used to evaluate changes in structure and morphology of the phases formed as a function of metal thickness and annealing temperature.

Suppression of Crystal Nucleation in Amorphous Si Thin Films by High Energy Ion Irradiation at Intermediate Temperatures

1990 ◽  
Vol 201 ◽  
Author(s):  
James S. Im ◽  
Jung H. Shin ◽  
Harry A. Atwater
Keyword(s):  
Ion Irradiation ◽  
High Energy ◽  
Intermediate Temperature ◽  
Crystal Nucleation ◽  
Potential Applications ◽  
Annealing Cycle ◽  
Amorphous Si ◽  
Si Films ◽  
Device Technology

AbstractIn situ electron microscopy has been used to observe crystal nucleation and growth in amorphous Si films. Results demonstrate that a repeated intermediate temperature ion irradiation/thermal annealing cycle can lead to suppression of nucleation in amorphous regions without inhibition of crystal growth of existing large crystals. Fundamentally, the experimental results indicate that the population of small crystal clusters near the critical cluster size is affected by intermediate temperature ion irradiation. Potential applications of the intermediate temperature irradiation/thermal anneal cycle to lateral solid epitaxy of Si and thin film device technology are discussed.

scholarly journals Binding of Copper and Nickel to Cavities in Silicon Formed by Helium Ion Implantation

1993 ◽  
Vol 316 ◽  
Author(s):  
S.M. Myers ◽  
D.M. Follstaedt ◽  
D.M. Bishop
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Internal Surfaces ◽  
Transmission Electron ◽  
Beam Analysis ◽  
Helium Ion ◽  
Saturation Coverage ◽  
Order Of Magnitude ◽  
Metallic Impurities ◽  
Initial Results

ABSTRACTCavities formed in Si by He ion implantation and annealing are shown be strong traps for Cu and Ni impurities. Experiments utilizing ion-beam analysis and transmission electron microscopy indicate that Cu is trapped at the internal surfaces of cavities up to ≈1 monolayer coverage with a binding energy of 2.2±0.2 eV relative to solution. This is greater than the heat of solution from the precipitated Cu3Si phase, determined to be 1.7 eV in agreement with earlier work. Copper at cavity-wall sites is reversibly replaced by H during heating in H2 gas, indicating the relative stability of the two surface terminations. Initial results for Ni impurities indicate that trapping at cavities is again energetically preferred to suicide formation. The saturation coverage of Ni on the internal surfaces, however, is an order of magnitude smaller for Ni than Cu, consistent with published studies of external-surface adsorption. These results suggest that cavity trapping may getter metallic impurities in Si more effectively than methods based on suicide precipitation.

Surface Effects During Ion Beam Processing of Materials

1995 ◽  
Vol 396 ◽  
Author(s):  
R.S. Averback ◽  
Mai Ghaly ◽  
H. Zhu
Keyword(s):  
Molecular Dynamics ◽  
Metallic Glass ◽  
Ion Implantation ◽  
Surface Topography ◽  
Computer Simulations ◽  
Collective Behavior ◽  
Ion Beam ◽  
Atomic Level ◽  
Surface Studies ◽  
Amorphous Si

AbstractMicrostructural changes of surfaces during ion implantation have been investigated on the atomic level by molecular dynamics computer simulations. Unlike past surface studies, which have been focused on the problem of sputtering, the current work examines the effects of collective materials response on surface topography. Collective behavior has been noted for the crystal interior in the context of thermal spikes, but we show here that it can lead to far more dramatic consequences at the surface. The investigation includes implantation in several metals, but emphasizing Pt, Si and Ge. In addition, the study includes the first simulations of implantations of a metallic glass, CuTi, and amorphous Si.

Crystallization of amorphous Si on a glass substrate through nucleation by Si+ion implantation

1990 ◽  
Vol 57 (19) ◽  
pp. 1970-1972 ◽  
Author(s):  
Tomonori Yamaoka ◽  
Keiji Oyoshi ◽  
Takashi Tagami ◽  
Yasunori Arima ◽  
Ken Yamashita ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Glass Substrate ◽  
Amorphous Si ◽  
Si Ion Implantation

Ion Beam Induced Structural and Electrical Modifications in Crystalline and Amorphous Silicon

1993 ◽  
Vol 316 ◽  
Author(s):  
S. Coffa ◽  
A. Battaglia ◽  
F. Priolo
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Ion Irradiation ◽  
Deep Level ◽  
Ion Beam ◽  
Defect Structures ◽  
Transmission Electron ◽  
Defect Accumulation ◽  
Amorphous Si ◽  
Transient Spectroscopy

ABSTRACTThe mechanisms of defect accumulation and dynamic annealing in ion-implanted crystalline and amorphous Si are elucidated by performing conductivity and Raman spec-trascopy measurements in-situ during ion irradiation. In amorphous Si the entire gamut of defect structures has been characterized by analyzing the annealing kinetics from 77 K to ~ 800 K both during and after irradiation. Moreover the modifications in the electronic properties of crystalline Si produced by ion-irradiation have been investigated. The use of in-situ techniques in combination with transmission electron microscopy and deep-level transient spectroscopy allowed us to demonstrate the correlation between structural and electrical defects produced by ion-irradiation in Si.

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