Ferroelectric Properties and Microstructures of Bi4-xDyxTi3O12 Thin Films
Keyword(s):
Dy-doped Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique, and the structures and electrical properties of the films were investigated. XRD results indicated that all of Bi4-xDyxTi3O12 films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the Bi4-xDyxTi3O12 Film with x=0.75 were 25μC/cm2 and 85KV/cm , respectively.
2010 ◽
Vol 105-106
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pp. 259-262
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2012 ◽
Vol 512-515
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pp. 1325-1328
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2010 ◽
Vol 123-125
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pp. 375-378
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2010 ◽
Vol 434-435
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pp. 281-284
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