Quenched-In Defects in CW Laser-Annealed Si

1981 ◽  
Vol 4 ◽  
Author(s):  
N.H. Sheng ◽  
J.L. Merz
Keyword(s):  
Laser Power ◽  
Room Temperature ◽  
Laser Annealing ◽  
Minority Carrier ◽  
Deep Hole ◽  
Carrier Injection ◽  
Furnace Annealing ◽  
Shallow Level ◽  
Cw Laser ◽  
Induced Defects

ABSTRACTDLTS has been used to investigate the nature of CW laser-induced defects in ion-implanted Si. A dominant hole trap (∼Ev + 0.45 eV), whose concentration depends on laser power, was observed immediately after sample preparation. This defect is not stable at room temperature; instead, it decays as a function of time, transmuting to a shallow level at Ev + 0.10 eV. The recovery of the Ev + 0.45 eV level can be stimulated by low temperature thermal annealing or by minority carrier injection. By comparing these defects in laser-annealed samples with defects produced by furnace annealing followed by rapid cooling, and with other published results, the laser-induced defects have beenidentified as interstitial Fe and Fe-B pairs. Experiments suggest that elevated substrate temperature during laser annealing may inhibit the formation of these deep hole traps.

Room-temperature minority-carrier injection-enhanced recovery of radiation-induced defects in p-InGaP and solar cells

2000 ◽  
Vol 76 (18) ◽  
pp. 2559-2561 ◽  
Author(s):  
Aurangzeb Khan ◽  
Masafumi Yamaguchi ◽  
Jacques C. Bourgoin ◽  
N. de Angelis ◽  
Tatsuya Takamoto
Keyword(s):  
Solar Cells ◽  
Room Temperature ◽  
Minority Carrier ◽  
Enhanced Recovery ◽  
Carrier Injection ◽  
Radiation Induced ◽  
Induced Defects

Minority-Carrier Injection-Enhanced Recovery of Radiation-Induced Defects in n+p AlInGaP Solar Cells

2006 ◽  
Author(s):  
Hae-seok Lee ◽  
Masafumi Yamaguchi ◽  
Nicholas J. Ekins-daukes ◽  
Aurangzeb Khan ◽  
Tatsuya Takamoto ◽  
...  
Keyword(s):  
Solar Cells ◽  
Minority Carrier ◽  
Enhanced Recovery ◽  
Carrier Injection ◽  
Radiation Induced ◽  
Induced Defects

A comparison of furnace annealing and CW laser annealing of Yb+implants in CdTe

1987 ◽  
Vol 102 (1-4) ◽  
pp. 69-82
Author(s):  
D. Wood ◽  
D. Shaw ◽  
F. J. Bryant
Keyword(s):  
Laser Annealing ◽  
Furnace Annealing ◽  
Cw Laser

Solid-Phase-Epitaxial Growth of Ion Implanted Silicon Using CW Laser and Electron Beam Annealing

1982 ◽  
Vol 13 ◽  
Author(s):  
J. Narayan ◽  
O. W. Holland ◽  
G. L. Olson
Keyword(s):  
Laser Annealing ◽  
Solid Phase ◽  
Furnace Annealing ◽  
Plan View ◽  
Dopant Segregation ◽  
Cw Laser ◽  
Retrograde Solubility ◽  
Section Electron ◽  
Residual Damage ◽  
Section Electron Microscopy

ABSTRACTThe nature of residual damage in As+, Sb+, and In+ implanted silicon after CW laser and e− beam annealing has been studied using plan-view and cross-section electron microscopy. Lattice location of implanted atoms and their concentrations were determined by Rutherford backscattering and channeling techniques. Maximum substitutional concentrations achieved by furnace annealing in a temperature range of 500–600°C have been previously reported [1] and greatly exceeded the retrograde solubility limits for all dopants studied. Higher temperatures and SPE growth rates characteristic of electron or cw laser annealing did not lead to greater incorporation of dopant within the lattice and often resulted in dopant precipitation. Dopant segregation at the surface was sometimes observed at higher temperatures.

Radiation-Resistant Properties of Inp-Related Materials

1994 ◽  
Vol 373 ◽  
Author(s):  
Masafumi Yamaguchi ◽  
Koshi Ando ◽  
Hidehiko Kamada
Keyword(s):  
Gamma Rays ◽  
Minority Carrier ◽  
Deep Level ◽  
High Energy ◽  
Carrier Injection ◽  
High Energy Electrons ◽  
Radiation Resistant ◽  
Radiation Induced ◽  
Transient Spectroscopy ◽  
Induced Defects

AbstractIrradiation effects of high-energy electrons and protons, and 60Co gamma-rays on InP-related materials have been examined in comparison with those of GaAs and Si. Superior radiation-resistance of InP-related materials and their devices compared to GaAs and Si has been found by using deep-level transient spectroscopy (DLTS), photoluminescence (PL) and properties of devices such as solar cells and lightemitting devices. Moreover, minority-carrier injection enhanced annealing phenomena of radiation-induced defects in InP-related materials have also been observed even at low temperature of around 150K.

CW Laser Annealing of Polycrystalline Silicon on SiO2and Effects of Successive Furnace Annealing

1982 ◽  
Vol 21 (Part 2, No. 1) ◽  
pp. L19-L21 ◽  
Author(s):  
Koichi Kugimiya ◽  
Genshu Fuse ◽  
Kaoru Inoue
Keyword(s):  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Furnace Annealing ◽  
Cw Laser

Minority‐carrier injection annealing of electron irradiation‐induced defects in InP solar cells

1984 ◽  
Vol 44 (4) ◽  
pp. 432-434 ◽  
Author(s):  
M. Yamaguchi ◽  
K. Ando ◽  
A. Yamamoto ◽  
C. Uemura
Keyword(s):  
Solar Cells ◽  
Electron Irradiation ◽  
Minority Carrier ◽  
Carrier Injection ◽  
Induced Defects ◽  
Irradiation Induced Defects

Room Temperature Steady State and Time Resolved PL Characterization of Ion Irradiation Induced Defects in 6H-SiC

2005 ◽  
Vol 483-485 ◽  
pp. 373-376
Author(s):  
Ricardo Reitano ◽  
M. Zimbone ◽  
Paolo Musumeci ◽  
P. Baeri
Keyword(s):  
Room Temperature ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Ion Irradiation ◽  
Minority Carrier Lifetime ◽  
Time Resolved ◽  
Induced Defects ◽  
Irradiation Induced Defects ◽  
Photoluminescence Peak

Photoluminescence (PL) and time resolved PL are well established as important experimental techniques to study electronic properties of SiC. We studied the influence of ionimplantation on the photoluminescence peak at 423nm and the variation of the minority carrier lifetime (MCL).

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