Radiation-Resistant Properties of Inp-Related Materials
Keyword(s):
AbstractIrradiation effects of high-energy electrons and protons, and 60Co gamma-rays on InP-related materials have been examined in comparison with those of GaAs and Si. Superior radiation-resistance of InP-related materials and their devices compared to GaAs and Si has been found by using deep-level transient spectroscopy (DLTS), photoluminescence (PL) and properties of devices such as solar cells and lightemitting devices. Moreover, minority-carrier injection enhanced annealing phenomena of radiation-induced defects in InP-related materials have also been observed even at low temperature of around 150K.
2005 ◽
Vol 483-485
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pp. 365-368
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2007 ◽
Vol 131-133
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pp. 363-368
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2013 ◽
Vol 205-206
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pp. 181-190
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2002 ◽
Vol 389-393
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pp. 489-492
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2015 ◽
Vol 66
(6)
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pp. 323-328
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