Solid-Phase-Epitaxial Growth of Ion Implanted Silicon Using CW Laser and Electron Beam Annealing

1982 ◽  
Vol 13 ◽  
Author(s):  
J. Narayan ◽  
O. W. Holland ◽  
G. L. Olson
Keyword(s):  
Laser Annealing ◽  
Solid Phase ◽  
Furnace Annealing ◽  
Plan View ◽  
Dopant Segregation ◽  
Cw Laser ◽  
Retrograde Solubility ◽  
Section Electron ◽  
Residual Damage ◽  
Section Electron Microscopy

ABSTRACTThe nature of residual damage in As+, Sb+, and In+ implanted silicon after CW laser and e− beam annealing has been studied using plan-view and cross-section electron microscopy. Lattice location of implanted atoms and their concentrations were determined by Rutherford backscattering and channeling techniques. Maximum substitutional concentrations achieved by furnace annealing in a temperature range of 500–600°C have been previously reported [1] and greatly exceeded the retrograde solubility limits for all dopants studied. Higher temperatures and SPE growth rates characteristic of electron or cw laser annealing did not lead to greater incorporation of dopant within the lattice and often resulted in dopant precipitation. Dopant segregation at the surface was sometimes observed at higher temperatures.

Comparison of Pulsed Laser and Furnace Annealing of Nitrogen Implanted Silicon

1983 ◽  
Vol 23 ◽  
Author(s):  
T. P. Smith ◽  
P. J. Stiles ◽  
W. M. Augustyniak ◽  
W. L. Brown ◽  
D. C. Jacobson ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Semiconductor Device ◽  
Solid Phase ◽  
Pulsed Laser ◽  
Nitride Layer ◽  
High Dose ◽  
Infrared Transmission ◽  
Furnace Annealing

ABSTRACTFormation of buried insulating layers and redistribution of impurities during annealing are important processes in new semiconductor device technologies. We have studied pulsed ruby laser and furnace annealing of high dose (D>1017 N/cm2) 50 KeV nitrogen implanted silicon. Using He Back scattering and channeling, X-ray diffraction, transmission electron microscopy, and infrared transmission spectroscopy, we have compared liquid and solid phase regrowth, diffusion, impurity segregation and nitride formation. As has been previously reported, during furnace annealing at or above 1200C nitrogen redistributes and forms a polycrystalline silicon nitride (Si3N4 ) layer. [1–4] In contrast, pulsed laser annealing produces a buried amorphous silicon nitride layer filled with voids or bubbles below a layer of polycrystalline silicon.

Solute Segregation and Dynamics of Solid-Phase Crystallization In in and Sb-Implanted Silicon

1981 ◽  
Vol 4 ◽  
Author(s):  
J. Narayan ◽  
G. L. Olson ◽  
O. W. Holland
Keyword(s):  
Laser Power ◽  
Solid Phase ◽  
Solute Segregation ◽  
Dislocation Loops ◽  
Solid Phase Crystallization ◽  
Time Resolved ◽  
Plan View ◽  
Ion Channeling ◽  
Retrograde Solubility ◽  
Transmission Electron

ABSTRACTTime-resolved-reflectivity measurements have been combined with transmission electron microscopy (cross-section and plan-view), Rutherford backscattering and ion channeling techniques to study the details of laser induced solid phase epitaxial growth in In+ and Sb+ implanted silicon in the temperature range from 725 to 1500 °K. The details of microstructures including the formation of polycrystals, precipitates, and dislocations have been correlated with the dynamics of crystallization. There were limits to the dopant concentrations which could be incorporated into substitutional lattice sites; these concentrations exceeded retrograde solubility limits by factors up to 70 in the case of the Si-In system. The coarsening of dislocation loops and the formation of a/2<110>, 90° dislocations in the underlying dislocation-loop bands are described as a function of laser power.

Transient and Furnace Annealing of Ion Implanted Gallium Arsenide

1980 ◽  
Vol 1 ◽  
Author(s):  
J. S. Williams ◽  
H. B. Harrison
Keyword(s):  
Gallium Arsenide ◽  
Solid Phase ◽  
Pulsed Lasers ◽  
Physical Processes ◽  
Furnace Annealing ◽  
Annealing Behaviour ◽  
Cw Laser ◽  
Similarities And Differences ◽  
Solid Phase Regrowth ◽  
Ion Implanted

ABSTRACTThis review examines the annealing behaviour of ion implanted gallium arsenide during furance, laser and e-beam processing.The two annealing regimes, namely solid phase regrowth via furnace or CW laser/e-beam annealing and liquid phase epitaxy produced by pulsed lasers/e-beam, are examined in some detail.Emphasis is placed upon an understanding of the physical processes which are important during the various annealing modes.Comparison with the annealing behaviour of ion implantedelemental semiconductors(notably silicon) is made throughout the review to highlight relevant similarities and differences between compound and elemental semiconductors.The electrical properties of annealed gallium arsenide layers are not treatedin any detail, although particular observations which are relevant to the annealing processes are briefly discussed.

A comparison of furnace annealing and CW laser annealing of Yb+implants in CdTe

1987 ◽  
Vol 102 (1-4) ◽  
pp. 69-82
Author(s):  
D. Wood ◽  
D. Shaw ◽  
F. J. Bryant
Keyword(s):  
Laser Annealing ◽  
Furnace Annealing ◽  
Cw Laser

CW Laser Annealing of Polycrystalline Silicon on SiO2and Effects of Successive Furnace Annealing

1982 ◽  
Vol 21 (Part 2, No. 1) ◽  
pp. L19-L21 ◽  
Author(s):  
Koichi Kugimiya ◽  
Genshu Fuse ◽  
Kaoru Inoue
Keyword(s):  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Furnace Annealing ◽  
Cw Laser

Quenched-In Defects in CW Laser-Annealed Si

1981 ◽  
Vol 4 ◽  
Author(s):  
N.H. Sheng ◽  
J.L. Merz
Keyword(s):  
Laser Power ◽  
Room Temperature ◽  
Laser Annealing ◽  
Minority Carrier ◽  
Deep Hole ◽  
Carrier Injection ◽  
Furnace Annealing ◽  
Shallow Level ◽  
Cw Laser ◽  
Induced Defects

ABSTRACTDLTS has been used to investigate the nature of CW laser-induced defects in ion-implanted Si. A dominant hole trap (∼Ev + 0.45 eV), whose concentration depends on laser power, was observed immediately after sample preparation. This defect is not stable at room temperature; instead, it decays as a function of time, transmuting to a shallow level at Ev + 0.10 eV. The recovery of the Ev + 0.45 eV level can be stimulated by low temperature thermal annealing or by minority carrier injection. By comparing these defects in laser-annealed samples with defects produced by furnace annealing followed by rapid cooling, and with other published results, the laser-induced defects have beenidentified as interstitial Fe and Fe-B pairs. Experiments suggest that elevated substrate temperature during laser annealing may inhibit the formation of these deep hole traps.

Study of the Crystalline to Amorphous Silicon Boundary Following Laser Induced Solid Phase Epitaxy.

1981 ◽  
Vol 4 ◽  
Author(s):  
J. P. Gonchond ◽  
G. A. Rozgonyi ◽  
D. Bois
Keyword(s):  
Chemical Etching ◽  
Laser Annealing ◽  
Solid Phase ◽  
Electrical Activation ◽  
Solid Phase Epitaxy ◽  
Si Substrate ◽  
Implantation Damage ◽  
Cw Laser ◽  
Higher Power ◽  
Voltage Contrast

ABSTRACTEBIC and voltage contrast SEM microscopy, combined with optical microscopy. chemical etching and Talystep profiling have been used to investigate cw laser annealing of a-Si in the slip-free SPE regime. Special attention is devoted to the edges and extremities of the line scans, i.e. to the c-to a-Si boundary. At very low power, evidence is given for an initial reordering and thus electrical activation stage of the a-Si. For the higher power range regrowth occurs through two different processes. The EBIC yield is interpreted in terms of a balance between annealing of the ion implantation damage and defect generation in the si substrate during the laser annealing. These results are extended to the case of a scanned electron beam annealing.

Analysis of Defects in Laser Annealed GaAs

1980 ◽  
Vol 2 ◽  
Author(s):  
John Fletcher ◽  
J. Narayan ◽  
D. H. Lowndes
Keyword(s):  
Laser Annealing ◽  
Laser Energy ◽  
Threshold Energy ◽  
High Dose ◽  
Surface Degradation ◽  
Plan View ◽  
Implantation Damage ◽  
Transmission Electron ◽  
Residual Damage ◽  
Good Agreement

ABSTRACTThe nature and depth distributions of residual damage in ion implanted and pulsed ruby laser annealed GaAs have been studied using both plan-view and cross-section transmission electron microscopy (TEM) specimens for high dose (1.0 × 1015 cm−2) Zn+, Se+ and Mg+ implants. It was found that laser energy densities above 0.36 J/cm2 were required to remove the implantation damage, this threshold energy density giving good agreement with that indicated by electrical activation measurements. Laser induced surface degradation of the GaAs was present even for energy densities as low as 0.25 J/cm2, and more severe damage, with the introduction of dislocations near the surface, was present for energy densities above 0.8 J/cm2. The use of thin SiO2 layers for encapsulation during laser annealing was found to substantially reduce this surface degradation.

Nucleation-Control and Enhancement of Solid-Phase-Crystallization of SiGe-Heterostructure

2000 ◽  
Vol 638 ◽  
Author(s):  
S. Yamaguchi ◽  
S. K. Park ◽  
N. Sugii
Keyword(s):  
Free Energy ◽  
Nucleation Rate ◽  
Laser Annealing ◽  
Solid Phase ◽  
Quartz Substrate ◽  
Alloy Layer ◽  
The Other ◽  
Solid Phase Crystallization ◽  
Furnace Annealing ◽  
Crystallization Property

AbstractThe crystallization of SiGe-heterostructure in which a thin Ge layer put between Si layers has been investigated. When the Ge layer is inside the Si layer, the crystallization phenomena are similar to those of SiGe alloy layer; Ge completely diffuses in Si layer during the crystallization. When the Ge layer is at the interface between the Si layer and the quartz substrate, significant enhancement of crystallization has been found. In this structure, decrease in surface free-energy increases the nucleation rate at the interface and causes anomalous localization of Ge at the interface. When the Ge layer is on the surface of the Si layer, the crystallization property is quite different from the other structures. The underlying Si layer has large and aligned grains when the furnace annealing is assisted by the laser-annealing.A part of this work was carried out under the ASET program supported by NEDO, Japan.

Radiation Damage and its Annealing in Semiconductors

1980 ◽  
Vol 2 ◽  
Author(s):  
J. Narayan ◽  
J. Fletcher
Keyword(s):  
Conventional Heating ◽  
Plan View ◽  
Defect Clusters ◽  
Section Electron ◽  
Residual Damage ◽  
Point Defect Clusters ◽  
Microscopy Techniques ◽  
Flame Annealing ◽  
Pulsed Laser Irradiation

ABSTRACTResidual damage in the form of point defect clusters and amorphous regions has been investigated in ion and neutron irradiated silicon specimens. Annealing of this damage during conventional heating, flame annealing, and pulsed laser irradiation has been studied by plan-view and cross-section electron microscopy techniques. These results provide detailed information on annealing mechanisms, and emphasize the characterization of damage in the as-irradiated state.

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