Material-Process Interactions in the Annealing of Gallium Arsenide
Keyword(s):
ABSTRACTThis review article provides an overview of the current understanding of the physical mechanisms involved in the annealing of ion implanted GaAs by thermal techniques and by CW and pulsed laser and electron beams. The successfulness of these techniques is evaluated in terms of the electrical and optical properties of the annealed layers. Promising areas of investigation for the improvement of the electrical properties of n-type layers produced by pulsed annealing are identified.
1974 ◽
Vol 16
(1)
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pp. 143-147
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2007 ◽
Vol 131-133
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pp. 225-232
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2008 ◽
Vol 23
(2-4)
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pp. 497-501
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2009 ◽
Vol 42
(16)
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pp. 165405
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Keyword(s):
2007 ◽
Vol 561-565
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pp. 1233-1236