The Electrical and Optical Properties of Point and Extended Defects in Silicon Arising from Oxygen Precipitation
2007 ◽
Vol 131-133
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pp. 225-232
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Keyword(s):
Oxygen precipitation in Si is a complex set of processes which has been studied over many years. Here we review theoretical work relating to the precipitation process. At temperatures around 450°C oxygen atoms become mobile and form a family of thermal double donors. The structure of these defects and the origin of their electrical activity is discussed. At temperature around 650°C these donors disappear and there is a growth of SiO2 precipitates along with rod like defects which are extended defects involving Si interstitials. At higher temperatures these collapse into dislocation loops. The structure and electrical properties of the rod like defect are described and compared with those of dislocations.
2007 ◽
Vol 561-565
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pp. 1233-1236
2012 ◽
Vol 189
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pp. 110-114
2017 ◽
Vol 2017
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pp. 1-9
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1968 ◽
Vol 27
(2)
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pp. 723-731
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