Grain Orientation Mapping and Spatially Resolved Strain Measurements for Polycrystalline Films by X-Ray Microdiffraction

1995 ◽  
Vol 403 ◽  
Author(s):  
P.-C. Wang ◽  
G. S. Cargill ◽  
I. C. Noyan ◽  
E. G. Liniger

AbstractWe describe spatially resolved grain orientation mapping of polycrystalline films using a synchrotron-based x-ray microdiffraction system. The system consists of a tapered glass capillary as a white x-ray concentrator, an energy-dispersive solid state detector and an x-y-z sample stage. Two mapping modes are discussed: reciprocal-space mapping and real-space mapping. Information about the orientations of grains within the irradiated volume is determined by reciprocal-space mapping. The locations of grains having a specified orientation are determined by real-space mapping. Examples are shown for blanket films of AI(4 wt.% Cu) 4μm-thick and 0.5μm thick. Results are also shown for 10μm-wide and μm-wide pure lines. X-ray beams of 10inm diameter were used for these measurements. Spatially resolved thermal strain measurements were made for a single 10μm-wide, 200μm-long passivated Al line, and they were found to be consistent with calculations based on equi-biaxial thermal stress within the line.

2018 ◽  
Vol 189 (02) ◽  
pp. 187-194 ◽  
Author(s):  
Nikita V. Marchenkov ◽  
Anton G. Kulikov ◽  
Ivan I. Atknin ◽  
Arsen A. Petrenko ◽  
Alexander E. Blagov ◽  
...  

2005 ◽  
Vol 97 (10) ◽  
pp. 103904 ◽  
Author(s):  
Satoru Kaneko ◽  
Kensuke Akiyama ◽  
Yoshitada Shimizu ◽  
Hiroyasu Yuasa ◽  
Yasuo Hirabayashi ◽  
...  

1997 ◽  
Vol 71 (13) ◽  
pp. 1822-1824 ◽  
Author(s):  
M. Li ◽  
C. R. Becker ◽  
R. Gall ◽  
W. Faschinger ◽  
G. Landwehr

2003 ◽  
Vol 798 ◽  
Author(s):  
K. Tachibana ◽  
Y. Harada ◽  
S. Saito ◽  
S. Nunoue ◽  
H. Katsuno ◽  
...  

ABSTRACTCharacterization by reciprocal space mapping of x-ray diffraction (XRD) intensity was carried out for epitaxial layers of GaN-based laser structures on two GaN substrates: GaN substrate and GaN template on sapphire substrate. The difference between these two substrates was shown clearly. The distribution of XRD intensity of the epitaxial layers on GaN substrate was smaller than that of the epitaxial layers on GaN template on sapphire substrate. In the lasers with the epitaxial structure on GaN substrate, the light output power was as high as 200 mW under continuous-wave operation at room temperature. Excellent noise characteristics with relative intensity noise of -132 dB/Hz were also obtained at a low light output power of 3 mW without any high-frequency modulation. These results support that GaN substrates are promising for realizing GaN-based lasers with high performance.


1996 ◽  
Vol 79 (7) ◽  
pp. 3578-3584 ◽  
Author(s):  
J. A. Olsen ◽  
E. L. Hu ◽  
S. R. Lee ◽  
I. J. Fritz ◽  
A. J. Howard ◽  
...  

1999 ◽  
Vol 32 (10A) ◽  
pp. A26-A31 ◽  
Author(s):  
H R Reß ◽  
T Gerhard ◽  
C Schumacher ◽  
V Hock ◽  
M Li ◽  
...  

1997 ◽  
Vol 12 (2) ◽  
pp. 541-545 ◽  
Author(s):  
T. Manabe ◽  
I. Yamaguchi ◽  
W. Kondo ◽  
S. Mizuta ◽  
T. Kumagai

La1−xSrxMnO3 (LSMO) (x = 0−0.3) films were prepared on SrTiO3(001) substrates by the dipping-pyrolysis process using metal naphthenates as starting materials. Epitaxially grown LSMO films were obtained by heat treatment at 800–1200 °C; the fluctuation of alignment of these films, evaluated by reciprocal-space mapping of asymmetric x-ray diffraction, was markedly small, as comparable to that of the substrates. The LSMO films with x = 0.1−0.3 showed metallic conduction behavior at 25–300 K, and the resistivity was as low as that of LSMO single crystals, e.g., 4.5 × 10−4 Ω · cm at 150 K for the film with x = 0.3.


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