A Perspective to Control Laser-Induced Periodic Surface Structure Formation at Glancing-Incident Femtosecond Laser-Processed Surfaces

The favorable combination of high material removal rate and low influence on the material beneath the ultra-short pulsed laser-processed surface are of particular advantage for sample preparation. This is especially true at the micrometer scale or for the pre-preparation for a subsequent focused ion beam milling process. Specific surface features, the laser-induced periodic surface structures, are generated on femtosecond laser-irradiated surfaces in most cases, which pose an issue for surface-sensitive mechanical testing or microstructural investigations. This work strives for an approach to enhance the surface quality of glancing-incident laser-processed surfaces on the model material copper with two distinctly different grain sizes. A new generalized perspective is presented, in which optimized parameter selection serves to counteract the formation of the laser-induced periodic surface structures, enabling, for example, grain orientation mapping directly on femtosecond laser processed surfaces.

Recent Developments for the Characterization of Crystals and Defects at the Nanoscale using On-Axis TKD in SEM

The development of advanced nanomaterials and nanodevices is dependent on the availability of powerful and reliable characterization techniques. In this context, we developed hardware and software capabilities to help push the spatial resolution limit during orientation mapping in a Scanning Electron Microscope (SEM).

Automated Crystal Orientation Mapping by Precession Electron Diffraction-Assisted Four-Dimensional Scanning Transmission Electron Microscopy Using a Scintillator-Based CMOS Detector

The recent development of electron-sensitive and pixelated detectors has attracted the use of four-dimensional scanning transmission electron microscopy (4D-STEM). Here, we present a precession electron diffraction-assisted 4D-STEM technique for automated orientation mapping using diffraction spot patterns directly captured by an in-column scintillator-based complementary metal-oxide-semiconductor (CMOS) detector. We compare the results to a conventional approach, which utilizes a fluorescent screen filmed by an external charge charge-coupled device camera. The high-dynamic range and signal-to-noise characteristics of the detector greatly improve the image quality of the diffraction patterns, especially the visibility of diffraction spots at high scattering angles. In the orientation maps reconstructed via the template matching process, the CMOS data yield a significant reduction of false indexing and higher reliability compared to the conventional approach. The angular resolution of misorientation measurement could also be improved by masking reflections close to the direct beam. This is because the orientation sensitive, weak, and small diffraction spots at high scattering angles are more significant. The results show that fine details, such as nanograins, nanotwins, and sub-grain boundaries, can be resolved with a sub-degree angular resolution which is comparable to orientation mapping using Kikuchi diffraction patterns.