Fim/Iap/Tem Studies of Ion Implanted Nickel Emitters

1984 ◽  
Vol 41 ◽  
Author(s):  
S. D. Walck ◽  
J. J. Hren
Keyword(s):  
Electric Fields ◽  
Depth Profiling ◽  
Atom Probe ◽  
Hydrogen Trapping ◽  
Transmission Electron ◽  
Microscope Imaging ◽  
Important Field ◽  
High Electric Fields ◽  
Field Ion Microscope

AbstractAccurate depth profiling of implanted hydrogen and its isotopes in metals is extremely important. Field ion microscopy and atom-probe techniques provide the most accurate depth profiling analytical method of any available. In addition, they are extremely sensitive to hydrogen. This paper reports our early work on hydrogen trapping at defects in metals using the Field Ion Microscope/Imaging Atom Probe (FIM/IAP). Our results deal primarily with the control experiments required to overcome instrumental difficulties associated with in situ implantation and the influence of a high electric field. Transmission Electron Microscopy (TEM) has been used extensively to independently examine the influence of high electric fields on emitters.

Atomic Spectroscopy in the FIM

1986 ◽  
Vol 44 ◽  
pp. 758-761
Author(s):  
J. J. Hren ◽  
S. D. Walck
Keyword(s):  
Electron Microscope ◽  
Electric Fields ◽  
Atom Probe ◽  
Atomic Spectroscopy ◽  
Single Atom ◽  
Statistical Sampling ◽  
Commercial Instrument ◽  
Available Technology ◽  
High Electric Fields ◽  
Field Ion Microscope

The field ion microscope (FIM) has had the ability to routinely image the surface atoms of metals since Mueller perfected it in 1956. Since 1967, the TOF Atom Probe has had single atom sensitivity in conjunction with the FIM. “Why then hasn't the FIM enjoyed the success of the electron microscope?” The answer is closely related to the evolution of FIM/Atom Probe techniques and the available technology. This paper will review this evolution from Mueller's early discoveries, to the development of a viable commercial instrument. It will touch upon some important contributions of individuals and groups, but will not attempt to be all inclusive. Variations in instrumentation that define the class of problems for which the FIM/AP is uniquely suited and those for which it is not will be described. The influence of high electric fields inherent to the technique on the specimens studied will also be discussed. The specimen geometry as it relates to preparation, statistical sampling and compatibility with the TEM will be examined.

A field ion microscope — imaging atom probe study of the underpotential deposition of copper on platinum

1984 ◽  
Vol 145 (1) ◽  
pp. L475-L480 ◽  
Author(s):  
K.G. Everett ◽  
S.D. Walck ◽  
G.M. Schmid ◽  
J.J. Hren
Keyword(s):  
Underpotential Deposition ◽  
Atom Probe ◽  
Microscope Imaging ◽  
Field Ion Microscope ◽  
Imaging Atom Probe

Displacement Charge Patterns and Ferroelectric Domain Wall Dynamics Studied by In-Situ Tem

1999 ◽  
Vol 596 ◽  
Author(s):  
A. Krishnan ◽  
M. M. J. Treacy ◽  
M. E. Bisher ◽  
P. Chandra ◽  
P. B. Littlewood
Keyword(s):  
Electric Fields ◽  
Domain Walls ◽  
Energy State ◽  
Ferroelectric Domain ◽  
Potassium Niobate ◽  
In Situ Tem ◽  
Domain Wall Dynamics ◽  
Transmission Electron ◽  
Energy Domain

AbstractWe have observed the growth of domains in ferroelectric barium titanate and potassium niobate using a transmission electron microscope. When domains move in response to electric fields we see a scaling effect where the fine scale domain structure is activated first, followed by larger length-scale patterns. Curvature and tilting of domain walls leads to local uncompensated displacement charge and external fields can interact with these charged walls. In this paper, we posit that the presence of displacement charge on domain walls is important for polarization switching. Charge-neutral domain configurations are in a lower energy state and are harder to switch. We argue that the number of charge-neutral, low energy domain configurations can increase with time. This mechanism provides an intrinsic contribution to ferroelectric fatigue.

The Application of Atom-Probe Techniques in Materials Science and Technology

1981 ◽  
Vol 39 ◽  
pp. 12-15
Author(s):  
Brian Ralph ◽  
A.R. Waugh ◽  
S.A. Hill ◽  
M.J. Southon ◽  
M.P. Thomas
Keyword(s):  
Electron Microscopy ◽  
Materials Science ◽  
Atom Probe ◽  
Original Form ◽  
Surface Process ◽  
Fine Scale ◽  
Probe Field ◽  
Transmission Electron ◽  
Field Ion Microscope ◽  
Imaging Atom Probe

This brief review attempts to summarize the main uses to which the atom-probe field-ion microscope and its variants have been put in the examination of materials. No attempt is made to produce a comprehensive list of all the studies made to date, rather the type of application is illustrated from recent studies.The original form of the field-ion microscope was really limited to the acquisition of geometrical and crystallographic information on the fine scale distribution of defects and phases (e.g. 1). Even in these early applications, the study proved considerably more fruitful when other microstructural techniques, such as transmission electron microscopy, were applied in parallel. The advent of the atom-probe (AP) and imaging atom-probe (IAP) instruments allowed precise microchemical information to be obtained and these instruments have now been used for a number of detailed investigations of materials. In the main, these have divided into (I) studies of surface process and films (e.g. 2) and (II) investigations of phase distributions and segregation in the bulk (e.g. 3).

In-Situ TEM Study of Domain Propagation in Ferroelectric Barium Titanate, and Its Role in Fatigue

1998 ◽  
Vol 541 ◽  
Author(s):  
A. Krishnan ◽  
M.E. Bisher ◽  
M.M.J. Treacy
Keyword(s):  
Barium Titanate ◽  
Electric Fields ◽  
Uv Irradiation ◽  
Domain Wall Motion ◽  
Domain Growth ◽  
In Situ Tem ◽  
Domain Motion ◽  
Transmission Electron ◽  
Temperature Electron

AbstractWe have conducted in-situ transmission electron microscopy (TEM) experiments on thinned single crystal barium titanate in order to study the effects of applied electric field, temperature, electron beam irradiation and UV irradiation on domain nucleation and propagation. We observe two basic modes of domain wall motion; (i) a lateral motion which uniformly widens or narrows the total domain width; (ii) a “zipping” motion in which one end of a domain narrows to a point, which then propagates lengthwise, widening (or narrowing) the domain behind it. Both domain creation and destruction can occur by this latter process. When cooling from above Tc, domain growth usually occurs by the “zipping” motion. We believe that both the lateral and “zipping” modes of motion are related. The “zipping” mode tends to occur in the presence of inhomogeneous long-range strain fields, or when trapped charges are present locally. In some instances, the trapped charge is strong enough to show significant image contrast in bright-field. Domain motion, initiated by heat, electric fields or UV irradiation, moves such charges. A model of domain motion is presented which shows how displacement charge can be injected into the ferroelectric, and which may contribute to the fatigue of these materials.

A field ion microscope — imaging atom probe study of the underpotential deposition of copper on platinum

1984 ◽  
Vol 145 (1) ◽  
pp. L475-L480
Author(s):  
K.G. Everett ◽  
S.D. Walck ◽  
G.M. Schmid ◽  
J.J. Hren
Keyword(s):  
Underpotential Deposition ◽  
Atom Probe ◽  
Microscope Imaging ◽  
Field Ion Microscope ◽  
Imaging Atom Probe

scholarly journals In-Situ Electrical Biasing of Electrically Connected TEM Lamellae with Embedded Nanodevices

2021 ◽  
Author(s):  
Maria Brodovoi ◽  
Kilian Gruel ◽  
Lucas Chapuis ◽  
Aurélien Masseboeuf ◽  
Cécile Marcelot ◽  
...  
Keyword(s):  
Electric Fields ◽  
High Performance ◽  
Low Cost ◽  
Electron Holography ◽  
Device Architecture ◽  
Quantitative Studies ◽  
Transmission Electron ◽  
Microelectronics Industry

Abstract In response to a continually rising demand for high performance and low-cost devices, and equally driven by competitivity, the microelectronics industry excels in meeting innovation challenges and further miniaturizing products. However, device shrinkage and the increasing complexity of device architecture require local quantitative studies. In this paper, we demonstrate with a case study on a nanocapacitor, the capability of transmission electron microscopy in electron holography mode to be a unique in-situ technique for mapping electric fields and charge distributions on a single device.

Scanning EM in very high electric fields near field ion/emission specimens

1995 ◽  
Vol 53 ◽  
pp. 624-625
Author(s):  
David J. Larson ◽  
Patrick P. Camus ◽  
Thomas F. Kelly
Keyword(s):  
Electron Microscope ◽  
Field Emission ◽  
Electric Fields ◽  
Near Field ◽  
Atom Probe ◽  
Emission Source ◽  
Probe Field ◽  
High Electric Fields ◽  
Scanning Em ◽  
Ion Emission

An atom probe field ion microscope (APFIM) has been constructed inside a NORAN Instruments Automated Digital Electron Microscope (ADEM). The ADEM is a scanning electron microscope (SEM) with a field emission source and a very large vacuum chamber. The APFIM has positive and negative high voltage capability and uses a microchannel-plate/phosphor screen assembly as an imaging and single-ion detector. The APFIM specimen can be cooled by a cryogenic refrigerator. The motivation for this study was the need to deliver an electron beam to the apex of an APFIM specimen while a high field is applied. The beam will be used to thermally pulse the field evaporation rate. The expected field-induced image shift and distortion has been studied previously in a transmission EM with a liquid metal field emission source as a specimen.Fig. 1 shows the interior of the instrument. Computer simulations were done for electron trajectories with negative and positive voltages applied to the emitter based on a simple paraboloidal electric field model described previously.

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