A Study of Local and Extended Migration of H and Defects in a-Si by Molecular Dynamics Simulations
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AbstractWe report on extensive molecular dynamics (MD) simulations on a-Si:H for up to 5 Ps using the ab initio code of Sankey and Drabold. The supercells contain about 70 atoms and only one defect in order to minimize defect-defect interaction. Simulations on supercell samples that originally contain one bond centered (BC) H in an otherwise defect free sample exhibit BC to BC diffusion as in c-Si. However, we also observe localized motion of defects and H atoms on a very fast time scale that probably has been observed in several experiments.
2020 ◽
Vol 22
(12)
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pp. 6690-6697
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2012 ◽
Vol 18
(18)
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pp. 5612-5619
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2016 ◽
Vol 18
(37)
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pp. 25806-25816
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