Low Temperature Polysilicon Materials and Devices

1996 ◽  
Vol 424 ◽  
Author(s):  
D. Pribat ◽  
P. Legagneux ◽  
F. Plais ◽  
C. Reita ◽  
F. Petinot ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Solid Phase ◽  
Thin Film Transistor ◽  
Pulsed Laser ◽  
Large Area ◽  
Thermal Budget ◽  
Polysilicon Films ◽  
The Way ◽  
Large Area Electronics

AbstractIn this paper, we essentially discuss the material aspects of low temperature (≤ 600 °C) polysilicon technologies. Emphasis is put on the properties of polysilicon films, depending on the way they are obtained. Solid phase crystallisation as well as pulsed laser crystallisation processes are presented in some detail, together with thin film transistor characteristics. Although not yet stabilised and despite uniformity and reproducibility problems, laser crystallisation will probably end up being the technology of choice for the manufacture of large area electronics products, because it allows the fabrication of devices exhibiting superior properties, with a reduced thermal budget.

Large Area Electronics for Flat Panel Imagers Progress and Challenges

2002 ◽  
Vol 715 ◽  
Author(s):  
J.P. Lu ◽  
K. Van Schuylenbergh ◽  
J. Ho ◽  
Y. Wang ◽  
J. B. Boyce ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Large Area ◽  
Flat Panel ◽  
Excimer Laser Annealing ◽  
And Performance ◽  
Flat Panel Imagers ◽  
Large Area Electronics

AbstractThe technology of large area electronics has made significant progress in recent years because of the fast maturing excimer laser annealing process. The new thin film transistors based on laser processed poly silicon provide unprecedented performance over the traditional thin film transistors using amorphous silicon. They open up the possibility of building flat panel displays and imagers with higher integration and performance. In this paper, we will review the progress of poly-Si thin film transistor technology with emphasis on imager applications. We also discuss the challenges of future improvement of flat panel imagers based on this technology.

Polycrystalline silicon thin film transistor technology for flexible large-area electronics

2001 ◽  
Author(s):  
YehJiun Tung ◽  
Paul G. Carey ◽  
Patrick M. Smith ◽  
Steven D. Theiss ◽  
Paul Wickboldt ◽  
...  
Keyword(s):  
Thin Film ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Large Area ◽  
Silicon Thin Film ◽  
Large Area Electronics

Hybrid Amorphous and Polycrystalline Silicon Devices for Large-Area Electronics

1998 ◽  
Vol 508 ◽  
Author(s):  
P. Mei ◽  
J. B. Boyce ◽  
D. K. Fork ◽  
G. Anderson ◽  
J. Ho ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Large Area ◽  
Silicon Thin Film ◽  
Device Structure ◽  
Short Channel ◽  
Simple Modification ◽  
Large Area Electronics

AbstractDistinct features of amorphous and polycrystalline silicon are attractive for large-area electronics. These features can be utilized in a hybrid structure which consists of both amorphous and polycrystalline silicon materials. For example, an extension of active matrix technology is the integration of peripheral drivers for the improvement of reliability, cost reduction and compactness of the packaging for large-area electronics. This goal can be approached by a combination of amorphous silicon pixel switches and polysilicon drivers. A monolithic fabrication process has been developed based on a simple modification of the amorphous silicon transistor process which uses selective area laser crystallization. This approach allows us to share many of the process steps involved in making both the amorphous and polysilicon devices. Another example of the hybrid device structure is a self-aligned amorphous silicon thin film transistor with polysilicon source and drain contacts. The advantages of the self-aligned transistor are reduction of the parasitic capacitance and scaling down of the device dimension. With a selective laser doping technique, self-aligned and short-channel amorphous silicon thin film transistors have been demonstrated.

scholarly journals Nondegenerate Polycrystalline Hydrogen-Doped Indium Oxide (InOx:H) Thin Films Formed by Low-Temperature Solid-Phase Crystallization for Thin Film Transistors

Materials ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 187
Author(s):  
Taiki Kataoka ◽  
Yusaku Magari ◽  
Hisao Makino ◽  
Mamoru Furuta
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Carrier Density ◽  
Solid Phase ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Solid Phase Crystallization ◽  
Metal Insulator ◽  
Fully Depleted ◽  
Oxide Tfts

We successfully demonstrated a transition from a metallic InOx film into a nondegenerate semiconductor InOx:H film. A hydrogen-doped amorphous InOx:H (a-InOx:H) film, which was deposited by sputtering in Ar, O2, and H2 gases, could be converted into a polycrystalline InOx:H (poly-InOx:H) film by low-temperature (250 °C) solid-phase crystallization (SPC). Hall mobility increased from 49.9 cm2V−1s−1 for an a-InOx:H film to 77.2 cm2V−1s−1 for a poly-InOx:H film. Furthermore, the carrier density of a poly-InOx:H film could be reduced by SPC in air to as low as 2.4 × 1017 cm−3, which was below the metal–insulator transition (MIT) threshold. The thin film transistor (TFT) with a metallic poly-InOx channel did not show any switching properties. In contrast, that with a 50 nm thick nondegenerate poly-InOx:H channel could be fully depleted by a gate electric field. For the InOx:H TFTs with a channel carrier density close to the MIT point, maximum and average field effect mobility (μFE) values of 125.7 and 84.7 cm2V−1s−1 were obtained, respectively. We believe that a nondegenerate poly-InOx:H film has great potential for boosting the μFE of oxide TFTs.

Hybrid Amorphous and Polycrystalline Silicon Devices For Large-Area Electronics

1998 ◽  
Vol 507 ◽  
Author(s):  
P. Mei ◽  
J. B. Boyce ◽  
D. K. Fork ◽  
G. Anderson ◽  
J. Ho ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Hybrid Structure ◽  
Large Area ◽  
Silicon Thin Film ◽  
Device Structure ◽  
Simple Modification ◽  
Large Area Electronics

ABSTRACTDistinct features of amorphous and polycrystalline silicon are attractive for large-area electronics. These features can be utilized in a hybrid structure which consists of both amorphous and polycrystalline silicon materials. For example, an extension of active matrix technology is the integration of peripheral drivers for the improvement of reliability, cost reduction and compactness of the packaging for large-area electronics. This goal can be approached by a combination of amorphous silicon pixel switches and polysilicon drivers. A monolithic fabrication process has been developed based on a simple modification of the amorphous silicon transistor process which uses selective area laser crystallization. This approach allows us to share many of the process steps involved in making both the amorphous and polysilicon devices. Another example of the hybrid device structure is a self-aligned amorphous silicon thin film transistor with polysilicon source and drain contacts. The advantages of the self-aligned transistor are reduction of the parasitic capacitance and scaling down of the device dimension. With a selective laser doping technique, self-aligned and shortchannel amorphous silicon thin film transistors have been demonstrated.

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