a-Si/c-Si Solar Cells: Effect of Preparation and Processing Techniques on the Photovoltaic Properties

1996 ◽  
Vol 426 ◽  
Author(s):  
B. Jagannathan ◽  
W. A. Anderson
Keyword(s):  
Solar Cells ◽  
Carrier Transport ◽  
Crystalline Silicon ◽  
Spectral Response ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Photovoltaic Properties ◽  
Si Solar Cells ◽  
Processing Techniques

AbstractThe photovoltaic (PV) properties of undoped amorphous silicon (a-Si)/ p-type crystalline silicon (c-Si) solar cells were found to improve by a hydrofluoric acid treatment of c-Si just prior to glow discharge deposition of a-Si. The short circuit current density (Jsc) improved from 2.7 to 23.5 mA/cm2 for an 0.1 μm thick a-Si layer. This also resulted in an improved spectral response of the solar cell in the violet region of the spectrum. The enhanced properties have been attributed to the improved carrier transport across the interface, as seen in the current-voltage-temperature relationships, and also PC-1D simulation of the devices. Solar cells of a similar type were also fabricated by dc magnetron sputtering of the a-Si layer. HF passivated cells (area ∼ 0.24 cm2) yielded about 9.5 % efficiency with Jsc of 30 mA/cm2 and a FF of 0.6, without use of an A/R coating. The variation of the PV properties of these cells was investigated as a function of a-Si thickness and c-Si doping.

Photogeneration and Carrier Transport in Amorphous Silicon/Crystalline Silicon Devices

1997 ◽  
Vol 467 ◽  
Author(s):  
B. Jagannathan ◽  
W. A. Anderson
Keyword(s):  
Amorphous Silicon ◽  
Carrier Transport ◽  
Crystalline Silicon ◽  
Plasma Deposition ◽  
Spectral Response ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Silicon Devices

ABSTRACTHydrogenated amorphous silicon (a-Si:H)/ crystalline silicon (c-Si) type heterodiodes in solar cell structures have been studied by rf glow discharge, dc magnetron sputtering, and a remote plasma deposition of a-Si:H onto p type c-Si. Carrier transport and photogeneration in such structures have been investigated by current-voltage-temperature, thermally stimulated capacitance (TSCAP), and spectral response experiments. Dark carrier conduction is found to be a combination of tunneling and interface recombination, but is dominated by either one depending on the deposition/sputtering conditions. The conditions investigated include energy of the plasma species, type of plasma cleaning, and substrate preparation techniques. For each of the conditions, the trap type, energy and concentration have been identified by TSCAP. Solar cells fabricated by the optimized fabrication scheme routinely yield 10.5% efficient devices having a short circuit current density (Jsc) of 30 mA/cm2, a open circuit voltage of 0.55 volts and a fill factor (FF) of 0.64, without an AR coating, over 0.3 cm2 area.

Photovoltaic Characteristics of Ultra-Thin Single Crystalline Silicon Solar Cells

2016 ◽  
Vol 25 (01n02) ◽  
pp. 1640008
Author(s):  
R. Miyazawa ◽  
H. Wakabayashi ◽  
K. Tsutsui ◽  
H. Iwai ◽  
K. Kakushima
Keyword(s):  
Solar Cells ◽  
Crystalline Silicon ◽  
Spectral Response ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Response Measurement ◽  
Single Crystalline ◽  
Si Solar Cells ◽  
Photovoltaic Characteristics

Photovoltaic characteristics of ultra-thin single crystalline Si solar cells with thicknesses ranging from 7.6 to 3.3 nm are presented. While the short-circuit current (ISC) AM1.5 illumination has shown a linear relationship with the volume of the Si layer, a gradual increase in the open-circuit voltage (VOC) with thinner Si layer has been confirmed, implying the bandgap enlargement of the Si layer due to quantum confinement. Spectral response measurement has revealed an increased optical bandgap of 1.3 eV for 3.3-nm-thick Si solar cells, which is wider than that of 7.6-nm-thick Si ones. Although some process related issues have become clear during the fabrication of solar cells, they can be utilized as top cells for tandem configurations, exceeding the limit of the bulk Si solar cells.

scholarly journals Analytical Study of the Electrical Output Characteristics of c-Si Solar Cells by Cut and Shading Phenomena

Energies ◽  
2018 ◽  
Vol 11 (12) ◽  
pp. 3397 ◽  
Author(s):  
Jong Lim ◽  
Woo Shin ◽  
Hyemi Hwang ◽  
Young-Chul Ju ◽  
Suk Ko ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Incident Light ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Si Solar Cell ◽  
Si Solar Cells ◽  
Electrical Output

Cut solar cells have received considerable attention recently as they can reduce electrical output degradation when the c-Si solar cells (crystalline-silicon solar cells) are shaded. Cut c-Si solar cells have a lower short-circuit current than normal solar cells and the decrease in short-circuit currents is similar to the shading effect of c-Si solar cells. However, the results of this study’s experiment show that the shadow effect of a c-Si solar cell reduces the V o c (open circuit voltage) in the c-Si solar cell but the V o c does not change when the c-Si solar cell is cut because the amount of incident light does not change. In this paper, the limitations of the electrical power analysis of the cut solar cells were identified when only photo current was considered and the analysis of the electric output of the cut c-Si solar cells was interpreted with a method different from that used in previous analyses. Electrical output was measured when the shaded and cut rates of c-Si solar cells were increased from 0% to 25, 50 and 75%, and a new theoretical model was compared with the experimental results using MATLAB.

scholarly journals Realization of Colored Multicrystalline Silicon Solar Cells with SiO2/SiNx:H Double Layer Antireflection Coatings

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Minghua Li ◽  
Libin Zeng ◽  
Yifeng Chen ◽  
Lin Zhuang ◽  
Xuemeng Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Double Layer ◽  
Short Circuit ◽  
Single Layer ◽  
Short Circuit Current ◽  
Industrial Applications ◽  
Short Circuit Current Density ◽  
Multicrystalline Silicon ◽  
Antireflection Coatings ◽  
Si Solar Cells

We presented a method to use SiO2/SiNx:H double layer antireflection coatings (DARC) on acid textures to fabricate colored multicrystalline silicon (mc-Si) solar cells. Firstly, we modeled the perceived colors and short-circuit current density (Jsc) as a function of SiNx:H thickness for single layer SiNx:H, and as a function of SiO2thickness for the case of SiO2/SiNx:H (DARC) with fixed SiNx:H (refractive indexn=2.1at 633 nm, and thickness = 80 nm). The simulation results show that it is possible to achieve various colors by adjusting the thickness of SiO2to avoid significant optical losses. Therefore, we carried out the experiments by using electron beam (e-beam) evaporation to deposit a layer of SiO2over the standard SiNx:H for156×156 mm2mc-Si solar cells which were fabricated by a conventional process. Semisphere reflectivity over 300 nm to 1100 nm andI-Vmeasurements were performed for grey yellow, purple, deep blue, and green cells. The efficiency of colored SiO2/SiNx:H DARC cells is comparable to that of standard SiNx:H light blue cells, which shows the potential of colored cells in industrial applications.

Enhanced Light Absorption in a-Si:H Layers of Solar Cells by Applying Tco/Metal Back Contacts

1993 ◽  
Vol 297 ◽  
Author(s):  
G. Tao ◽  
B.S. Girwar ◽  
G.E.N. Landweer ◽  
M. Zeman ◽  
J.W. Metselaar
Keyword(s):  
Solar Cells ◽  
Metal Layer ◽  
Spectral Response ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Back Contact ◽  
Flat Substrate ◽  
Metal Layers ◽  
Metal Back

The optimization of the back contact reflectivity for thin film a-Si:H solar cells has been performed. The results of optical calculations show that a-Si:H/TCO/Metal interfaces with a proper TCO thickness reflect much more than their a-Si:H/Metal counterparts. We compared solar cells which were deposited on a flat substrate with different back contacts. The back contacts consisted of a metal layer (aluminum, silver/aluminum) or combined TCO/metal layers (TCO/Al, TCO/Ag/Al). The same was done with solar cells which were deposited on a textured substrate. The solar cells with a TCO/metal back contact showed not only a significantly increased short-circuit current density but also an increase in the spectral response. The cells with TCO/Ag/Al back contact showed the best result.

Effect of CdCl2 Treatment of CdS Films on CdTe/CdS Solar Cells

1996 ◽  
Vol 426 ◽  
Author(s):  
W. Song ◽  
D. Mao ◽  
L. Feng ◽  
Y. Zhu ◽  
M. H. Aslan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Spectral Response ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
X Ray Diffraction ◽  
Cdcl2 Treatment ◽  
The Difference ◽  
Cds Films

AbstractWe investigated the effect of CdCl2 treatment of CdS films on the photovoltaic performance of polycrystalline CdTe/CdS solar cells. X-ray diffraction studies indicated that the diffusion of S into CdTe is qualitatively the same for CdTe/CdS films fabricated with both as-deposited and CdCl2-treated CdS. A major difference was observed in the extent of Te diffusion into CdS for the two types of CdS films. Full conversion of CdS into CdS1-yTey; was observed for films prepared with asdeposited CdS, while the formation of the ternary phase was below the detection limit for films prepared with CdCl2-treated CdS. Photoluminescence measurements confirmed this result. The difference in interdiffusion leads to differences in optical transmission of CdS films and spectral response of CdTe/CdS solar cells. An increase of 2.7 mA/cm2 in short-circuit current density was observed as a result of improved spectral response in the wavelength range of 500–600 nm for the CdCl2-treated CdS.

scholarly journals Effect of the Phosphorus Gettering on Si Heterojunction Solar Cells

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Hyomin Park ◽  
Sung Ju Tark ◽  
Chan Seok Kim ◽  
Sungeun Park ◽  
Young Do Kim ◽  
...  
Keyword(s):  
Solar Cells ◽  
Current Density ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Solar Simulator ◽  
Heterojunction Solar Cells ◽  
Crystalline Silicon Solar Cells

To improve the efficiency of crystalline silicon solar cells, should be collected the excess carrier as much as possible. Therefore, minimizing the recombination both at the bulk and surface regions is important. Impurities make recombination sites and they are the major reason for recombination. Phosphorus (P) gettering was introduced to reduce metal impurities in the bulk region of Si wafers and then to improve the efficiency of Si heterojunction solar cells fabricated on the wafers. Resistivity of wafers was measured by a four-point probe method. Fill factor of solar cells was measured by a solar simulator. Saturation current and ideality factor were calculated from a dark current density-voltage graph. External quantum efficiency was analyzed to assess the effect of P gettering on the performance of solar cells. Minority bulk lifetime measured by microwave photoconductance decay increases from 368.3 to 660.8 μs. Open-circuit voltage and short-circuit current density increase from 577 to 598 mV and 27.8 to 29.8 mA/cm2, respectively. The efficiency of solar cells increases from 11.9 to 13.4%. P gettering will be feasible to improve the efficiency of Si heterojunction solar cells fabricated on P-doped Si wafers.

scholarly journals Fabrication and Characterization of CH3NH3PbI3 Perovskite Solar Cells Added with Polysilanes

2018 ◽  
Vol 2018 ◽  
pp. 1-7 ◽  
Author(s):  
Takeo Oku ◽  
Junya Nomura ◽  
Atsushi Suzuki ◽  
Hiroki Tanaka ◽  
Sakiko Fukunishi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Short Circuit ◽  
Perovskite Solar Cells ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Interfacial Structure ◽  
Perovskite Layer ◽  
Photovoltaic Properties ◽  
Coating Method

Effects of polysilane additions on CH3NH3PbI3 perovskite solar cells were investigated. Photovoltaic cells were fabricated by a spin-coating method using perovskite precursor solutions with polymethyl phenylsilane, polyphenylsilane, or decaphenyl cyclopentasilane (DPPS), and the microstructures were examined by X-ray diffraction and optical microscopy. Open-circuit voltages were increased by introducing these polysilanes, and short-circuit current density was increased by the DPPS addition, which resulted in the improvement of the photoconversion efficiencies to 10.46%. The incident photon-to-current conversion efficiencies were also increased in the range of 400~750 nm. Microstructure analysis indicated the formation of a dense interfacial structure by grain growth and increase of surface coverage of the perovskite layer with DPPS, and the formation of PbI2 was suppressed, leading to the improvement of photovoltaic properties.

Preparation of Narrow-gap a-Si:H Solar Cells by VHF-PECVD Technique

2010 ◽  
Vol 1245 ◽  
Author(s):  
Do Yun Kim ◽  
Ihsanul Afdi Yunaz ◽  
Shunsuke Kasashima ◽  
Shinsuke Miyajima ◽  
Makoto Konagai
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Spectral Response ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Hydrogen Flow ◽  
Long Wavelength

AbstractOptical, electrical and structural properties of silicon films depending on hydrogen flow rate (RH), substrate temperature (TS), and deposition pressure (PD) were investigated. By decreasing RH and increasing TS and PD, the optical band gap (Eopt) of silicon thin films drastically declined from 1.8 to 1.63 eV without a big deterioration in electrical properties. We employed all the investigated Si thin films for p-i-n structured solar cells as absorbers with i-layer thickness of 300 nm. From the measurement of solar cell performances, it was clearly observed that spectral response in long wavelength was enhanced as Eopt of absorber layers decreased. Using the solar cell whose Eopt of i-layer was 1.65 eV, the highest QE at long wavelength with the short circuit current density (Jsc) of 16.34 mA/cm2 was achieved, and open circuit voltage (Voc), fill factor (FF), and conversion efficiency (η) were 0.66 V, 0.57, and 6.13%, respectively.

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