Low Temperature Growth of PZT(52/48) Thin Films using Rf Magnetron Sputtering Method

1996 ◽  
Vol 433 ◽  
Author(s):  
Tae Song Kim ◽  
Dong Joo Kim ◽  
Jeon Kook Lee ◽  
Hyung Jin Jung
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Perovskite Phase ◽  
Rf Magnetron Sputtering ◽  
Grown Film ◽  
Temperature Growth ◽  
Low Temperature Growth

AbstractComparatively low temperature growth of Pb(Zr0.52Ti0.48)O3 thin films was accomplished by using rf magnetron sputtering process. Well crystallized PZT thin films (4000Å thickness) were synthesized on Pt/Ti/SiO2/Si(100) substrate at the temperature as low as 5200°C. The polycrystalline PZT perovskite phase formation was confirmed with XRD analysis. Remanent polarization(Pr) and coercive field(Ec) of as-grown film (4000Å) were 8–30 μC/cm2 and 24–64 kV/cm with the applied voltage variation(5–17 V). The post annealing enhances the electrical properties even at 500°C, which is below the as-grown temperature(520°C). The increase of annealing temperature resulted in the consequent increase of remanent polarization and the decrease of coercive field. The values of dielectric constant(ε′ ) and tan δ measured with small signal sign wave(1V, 10kHz) were 1207 and 0.066 in case of as-grown film (4000Å).

LOW-TEMPERATURE GROWTH AND PHOTOLUMINESCENCE OF SiCN NANOPARTICLE FILM BY CONSECUTIVE RF MAGNETRON SPUTTERING

2004 ◽  
Vol 11 (06) ◽  
pp. 515-519 ◽  
Author(s):  
M. XU ◽  
V. M. NG ◽  
S. Y. HUANG ◽  
S. Y. XU
Keyword(s):  
Low Temperature ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Diffraction Intensity ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Pl Intensity ◽  
Aln Buffer ◽  
Nanoparticle Film

Low-temperature growth of SiCN nanoparticle films on an AlN buffer layer on Si (100) by consecutive RF magnetron sputtering is reported. The visible photoluminescence (PL) is observed between 620 and 670 nm using a single photo excitation at 514.5 nm. The growth of film at room temperature is found to yield the strongest PL intensity, whereas the film grown at 200°C corresponds to the lowest PL intensity. A similar variation of SiC diffraction intensity is also observed in XRD spectra. The photoluminescence of the SiCN film is discussed on the base of the morphological, structural and elemental analyse.

In situ low temperature growth of poly-crystalline germanium thin film on glass by RF magnetron sputtering

2010 ◽  
Vol 94 (9) ◽  
pp. 1501-1505 ◽  
Author(s):  
Chao-Yang Tsao ◽  
Jürgen W. Weber ◽  
Patrick Campbell ◽  
Gavin Conibeer ◽  
Dengyuan Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Crystalline Germanium

Electrical Characteristics and Microstructures of Ce-Doped Bi4Ti3O12 Films

2008 ◽  
Vol 368-372 ◽  
pp. 91-94
Author(s):  
S. Chen ◽  
A.H. Cai ◽  
X.A. Mei ◽  
Chong Qing Huang ◽  
W.K. An ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Coercive Field ◽  
Marked Improvement ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Electrical Characteristics ◽  
Si Substrates

Sm-doped bismuth titanate and random oriented Bi4-xCexTi3O12 (BCT) thin films were fabricated on Pt/Ti/SiO2/Si substrates rf magnetron sputtering technique. The structures and the ferroelectric properties of the films were investigated. Ce doping leads to a marked improvement in the remanent polarization (Pr) and the coercive field (Ec). At the applied electric field of 100 kV/cm, Pr and Ec of the BCT (x = 0.8) film annealed at 650 oC are 20.5 μC/cm2 and 60 KV/cm, respectively. However, after 3 × 1010 switching cycles, 20% degradation of 2Pr is observed in the film.

A novel low-temperature growth of uniform CuInS2 thin films and their application in selenization/sulfurization-free CuInS2 solar cells

2021 ◽  
Vol 26 ◽  
pp. 102050
Author(s):  
Mehdi Dehghani ◽  
Ershad Parvazian ◽  
Nastaran Alamgir Tehrani ◽  
Nima Taghavinia ◽  
Mahmoud Samadpour
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Low Temperature ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Cuins2 Thin Films

Low-Temperature Growth of Ferroelectric Hf0.5Zr0.5O2 Thin Films Assisted by Deep Ultraviolet Light Irradiation

2021 ◽  
Vol 3 (3) ◽  
pp. 1244-1251
Author(s):  
Hyunjin Joh ◽  
Gopinathan Anoop ◽  
Won-June Lee ◽  
Dipjyoti Das ◽  
Jun Young Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Ultraviolet Light ◽  
Light Irradiation ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Ultraviolet Light Irradiation ◽  
Deep Ultraviolet
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