Multilevel Approaches Toward Monitoring and Control of Semiconductor Epitaxy
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AbstractVarious optical techniques have been developed over the last few years to allow real-time analysis of regions of importance for semiconductor epitaxy, in particular the unreacted and reacted parts of the surface reaction layer (SRL) and the near-surface region of the sample. When coupled with emerging microscopic methods of calculating optical properties, these approaches will allow several levels of control beyond that which has been currently demonstrated.
2019 ◽
Vol 1409
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pp. 012007
2011 ◽
Vol 6
(1)
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pp. 10-12
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An Interactive Minicomputer Program for the Indexing and Simulation of Electron Diffraction Patterns
1976 ◽
Vol 34
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pp. 542-543
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One Step
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2018 ◽
Vol 6
(3)
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pp. 491-494
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2017 ◽
Vol 34
(1)
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pp. 75
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2015 ◽
Vol 3
(2)
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pp. 9-22
2020 ◽
Vol 67
(4)
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pp. 1197-1205
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2020 ◽
Vol 286
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pp. 116832
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