Ab Initio Calculations for Grain Boundaries in Covalent Ceramics
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ABSTRACTAb initio calculations of grain boundaries in SiC have been performed for the first time by using the first-principles molecular dynamics (FPMD) method. Four-fold coordinated models of polar and non-polar interfaces of the {122}Σ = 9 boundary in SiC have been examined. Interfacial C-C and Si-Si wrong bonds have bond lengths and bond charges similar to those in bulk diamond and Si. The C-C bonds generate greatly localized states at the valence-band edges, which have features similar to the bulk band-edge states of diamond. The wrong bonds have significant effects on the properties of grain boundaries in SiC.
2004 ◽
pp. 129-157
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2008 ◽
Vol 128
(24)
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pp. 244304
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2012 ◽
Vol 116
(28)
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pp. 14883-14891
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2002 ◽
Vol 4
(11)
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pp. 2119-2122
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2019 ◽
2018 ◽
Vol 20
(20)
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pp. 13944-13951
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