Characteristics of Y2O3 films on Si(100) by ionized cluster beam deposition

ABSTRACTIn this study, the Y2O3 films on p-type Si(100) have been fabricated by UHV reactive ionized cluster beam deposition(r-ICB) systems. The crystallinity of the films was investigated by glancing X-ray diffraction(GXRD) and in-situ reflection of high energy electron diffraction(RHEED) analyses. The results show that the preferentially oriented crystallinity of the films was increased with acceleration voltages as well as substrate temperatures. Especially, at the substrate temperature of 700 °C and the acceleration voltage of 5kV, the Y2O3 films grow epitaxially in direction of Y2O3(110)//Si(100). The characteristics of Al/Y2O3/Si MIS structure were obtained by C-V, and I-V measurements. The breakdown field strength of the epitaxially grown films increases up to 2MV/cm without any interface silicon oxide layer, and the dielectric constant is found to be ε=15.6. these results demonstrated that the yttrium oxide films have potential application to the gate insulator of the future VLSI/ULSI devices.

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Aluminum surface mobility on two types of silicon oxide during ionized cluster beam deposition

Surface and Interface Analysis ◽

10.1002/sia.740150216 ◽

1990 ◽

Vol 15 (2) ◽

pp. 159-162 ◽

Cited By ~ 2

Author(s):

L. L. Levenson ◽

A. B. Swartzlander ◽

H. Usui ◽

I. Yamada

Keyword(s):

Silicon Oxide ◽

Aluminum Surface ◽

Cluster Beam ◽

Surface Mobility ◽

Cluster Beam Deposition ◽

Beam Deposition

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XPS Spectra of Cu Thin Films Prepared by Ionized Cluster Beam Deposition

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.549.720 ◽

2012 ◽

Vol 549 ◽

pp. 720-723

Author(s):

Bo Cao ◽

Tong Rui Yang ◽

Gong Ping Li ◽

Seong Jin Cho ◽

Hee Kim

Keyword(s):

Thin Films ◽

Binding Energy ◽

Photoelectron Spectroscopy ◽

Copper Films ◽

Cluster Beam ◽

Xps Spectra ◽

P Type ◽

Cluster Beam Deposition ◽

Atomic Binding Energy ◽

Beam Deposition

The Cu thin films were deposited on P type Si (111) substrates by ionized cluster beam (ICB) technique. The surface properties and atomic binding energy of Cu thin films were studied by X-ray Photoelectron Spectroscopy (XPS). The results show that for all XPS spectra of Cu/SiO2/Si (111) samples deposited by neutral cluster and ionized cluster beam (Va=5 kV), the atomic binding energy of the films was no differences with bulk materials. The reason may be that the local energy deposition and atomic restructuring caused by surface treatment process resulting in the XPS spectra of the copper films was similar with bulk standard copper.

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Stabilization of Metastable Zinc-Blende Phase MnTe by Ionized Cluster Beam Deposition

MRS Proceedings ◽

10.1557/proc-279-855 ◽

1992 ◽

Vol 279 ◽

Author(s):

K. Ando ◽

K. Takahashi ◽

Y. Takeuchi

Keyword(s):

Ion Beam ◽

High Energy ◽

Cluster Beam ◽

Bulk Crystals ◽

Film Properties ◽

Zinc Blende ◽

Cluster Ion ◽

Cluster Beam Deposition ◽

Acceleration Voltage ◽

Beam Deposition

ABSTRACTThe ionized cluster beam (ICB) deposition was use to stabilize the metastable zinc-blende (ZB) MnTe films directly on GaAs (100) substrates at 300 °C with MnTe cluster ion beam. Influences of the ionization and the acceleration voltage on film properties were investigated by the reflection high-energy electron diffraction (RHEED), optical reflection, Raman scattering, and photoluminescence. The ZB-MnTe was stabilized by 3kV acceleration of the MnTe cluster beam. These results showed that the ICB deposition is useful to get compounds having crystalline phase different from the structures observed io equilibrium-grown bulk crystals.

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