Stabilization of Metastable Zinc-Blende Phase MnTe by Ionized Cluster Beam Deposition

1992 ◽  
Vol 279 ◽  
Author(s):  
K. Ando ◽  
K. Takahashi ◽  
Y. Takeuchi
Keyword(s):  
Ion Beam ◽  
High Energy ◽  
Cluster Beam ◽  
Bulk Crystals ◽  
Film Properties ◽  
Zinc Blende ◽  
Cluster Ion ◽  
Cluster Beam Deposition ◽  
Acceleration Voltage ◽  
Beam Deposition

ABSTRACTThe ionized cluster beam (ICB) deposition was use to stabilize the metastable zinc-blende (ZB) MnTe films directly on GaAs (100) substrates at 300 °C with MnTe cluster ion beam. Influences of the ionization and the acceleration voltage on film properties were investigated by the reflection high-energy electron diffraction (RHEED), optical reflection, Raman scattering, and photoluminescence. The ZB-MnTe was stabilized by 3kV acceleration of the MnTe cluster beam. These results showed that the ICB deposition is useful to get compounds having crystalline phase different from the structures observed io equilibrium-grown bulk crystals.

Aluminum Atom Surface Mobility on SiO2 During Ionized Cluster Beam Deposition

1988 ◽  
Vol 128 ◽  
Author(s):  
Leonard L. Levenson ◽  
Amy B. Swartzlander ◽  
Hiroaki Usui ◽  
Isao Yamada ◽  
Toshinori Takagi
Keyword(s):  
Aluminum Atom ◽  
Chamber Pressure ◽  
Cluster Beam ◽  
Diffusion Distance ◽  
Surface Mobility ◽  
Scanning Auger Microprobe ◽  
Cluster Beam Deposition ◽  
Acceleration Voltage ◽  
Mask Edge ◽  
Beam Deposition

ABSTRACTAn ionized cluster beam (ICB) source was used to deposit Al onto SiO2 substrates. A 60 gtm diameter wire held at the substrate served as a mask. After Al deposition, the wire was removed and the masked area was examined by scanning electron microscopy (SEM) and by scanning Auger microprobe (SAM). The ICB source was operated at 0, 3, and 6 kV acceleration voltages. The substrate was held at 80°, 200°, and 400°C during Al depositions. The Al deposition rate averaged 240 A per min. The chamber pressure during deposition was 2×10-6 Torr. The diffusion distance of Al under the mask edge was determined from the SEM micrographs and SAM line scans. The maximum diffusion distance for all acceleration voltages occured at a substate temperature of 200°C. The maximum diffusion distance at 200°C was 29 μm at 6 kV acceleration voltage. The minimum diffusion distance was 12 μm at 400°C for an acceleration voltage of 6 kV.

Crystalline Polyimide Thin Film Deposition by Ionized Cluster Bean

1989 ◽  
Vol 157 ◽  
Author(s):  
S.J. Cho ◽  
H.S. Choe ◽  
H.G. Jang ◽  
S.S. Iim ◽  
C.N. Whang
Keyword(s):  
Crystal Orientation ◽  
Thin Film Deposition ◽  
Polyimide Film ◽  
Film Deposition ◽  
Ion Acceleration ◽  
Cluster Beam ◽  
Cluster Beam Deposition ◽  
Acceleration Voltage ◽  
Preferential Crystal Orientation ◽  
Beam Deposition

ABSTRACTPolyimide thin films are deposited by the ionized cluster beam deposition( ICBD ) technique. Polymerization and crystallization of polyimide were investigated using TEN, IR, and the electronic structure of the polyimide film was investigated using XPS. Films deposited at optimum ion acceleration voltage showed strong preferential crystal orientation. Crystalline polyimide film was obtained at ion acceleration voltage of 700 V.

Characteristics of Y2O3 films on Si(100) by ionized cluster beam deposition

1997 ◽  
Vol 474 ◽  
Author(s):  
M. H. Cho ◽  
S. W. Whangbo ◽  
C. N. Whang ◽  
S. C. Choi ◽  
S. B. Kang ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
High Energy ◽  
Gate Insulator ◽  
Breakdown Field ◽  
Mis Structure ◽  
Cluster Beam ◽  
Silicon Oxide Layer ◽  
P Type ◽  
Cluster Beam Deposition ◽  
Beam Deposition

ABSTRACTIn this study, the Y2O3 films on p-type Si(100) have been fabricated by UHV reactive ionized cluster beam deposition(r-ICB) systems. The crystallinity of the films was investigated by glancing X-ray diffraction(GXRD) and in-situ reflection of high energy electron diffraction(RHEED) analyses. The results show that the preferentially oriented crystallinity of the films was increased with acceleration voltages as well as substrate temperatures. Especially, at the substrate temperature of 700 °C and the acceleration voltage of 5kV, the Y2O3 films grow epitaxially in direction of Y2O3(110)//Si(100). The characteristics of Al/Y2O3/Si MIS structure were obtained by C-V, and I-V measurements. The breakdown field strength of the epitaxially grown films increases up to 2MV/cm without any interface silicon oxide layer, and the dielectric constant is found to be ε=15.6. these results demonstrated that the yttrium oxide films have potential application to the gate insulator of the future VLSI/ULSI devices.

XPS and FTIR Study of the Thin Polyimide Films Fabricated by Ionized Cluster Beam Deposition

1991 ◽  
Vol 235 ◽  
Author(s):  
K. W. Kim ◽  
K. H. Chae ◽  
S. C. Choi ◽  
S. J. Cho ◽  
Y. W. Vahc ◽  
...  
Keyword(s):  
High Surface ◽  
Chemical Properties ◽  
Surface Cleaning ◽  
Cluster Beam ◽  
Polyimide Films ◽  
Surface Migration ◽  
Cluster Ion ◽  
Ft Ir ◽  
Cluster Beam Deposition ◽  
Beam Deposition

ABSTRACTThe ionized cluster beam deposition (ICBD) technique has been employed to fabricate high-purity polyimide (PI) films. The pyromellitic dianhydride (PMDA) and oxydianiline (ODA) were deposited using dual ionized cluster beam (ICB) sources. Fourier transform infrared spectroscopy (FT-IR) and X-ray photoemission spectroscopy (XPS) studies show that the bulk and surface chemical properties are very sensitive to the ICBD conditions such as cluster ion acceleration voltage and ionization voltage. At optimum ICBD conditions, the PI films have a maximum imidization and negligible impurities(∼;1% isoimide) probably due to the high surface migration energy and surface cleaning effect.

scholarly journals Arrays of Size-Selected Metal Nanoparticles Formed by Cluster Ion Beam Technique

MRS Advances ◽  
2018 ◽  
Vol 3 (45-46) ◽  
pp. 2771-2776 ◽  
Author(s):  
Florian A. Ceynowa ◽  
Manohar Chirumamilla ◽  
Vladimir A. Zenin ◽  
Vladimir N. Popok
Keyword(s):  
Ion Beam ◽  
Cluster Beam ◽  
Coinage Metal ◽  
Plasmonic Structures ◽  
Surface Enhanced ◽  
Surface Enhanced Raman ◽  
Cluster Ion ◽  
Enhanced Raman Scattering ◽  
Cluster Beam Deposition ◽  
Beam Technique

ABSTRACTDeposition of size-selected copper and silver nanoparticles (NPs) on polymers using cluster beam technique is studied. It is shown that ratio of particle embedment in the film can be controlled by simple thermal annealing. Combining electron beam lithography, cluster beam deposition, and heat treatment allows to form specific patterns (arrays) of metal NPs on polymer films. Plasticity and flexibility of polymer host and specific properties added by coinage metal NPs open a way for different applications of such composite materials, in particular, for the formation of plasmonic structures with required configurations which can be applied for wave-guiding, resonators, in sensor technologies, and surface enhanced Raman scattering.

Analysis of Voltage Contrast in Secondary Electron Images Using a High-Energy Electron Spectrometer

2019 ◽  
Author(s):  
Natsuko Asano ◽  
Shunsuke Asahina ◽  
Natasha Erdman
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Sample Surface ◽  
High Energy ◽  
Secondary Electrons ◽  
Analysis Technique ◽  
Quantitative Understanding ◽  
Voltage Contrast ◽  
Acceleration Voltage ◽  
Failure Localization

Abstract Voltage contrast (VC) observation using a scanning electron microscope (SEM) or a focused ion beam (FIB) is a common failure analysis technique for semiconductor devices.[1] The VC information allows understanding of failure localization issues. In general, VC images are acquired using secondary electrons (SEs) from a sample surface at an acceleration voltage of 0.8–2.0 kV in SEM. In this study, we aimed to find an optimized electron energy range for VC acquisition using Auger electron spectroscopy (AES) for quantitative understanding.

Mass selection of neutral clusters in Low‐Energy Cluster Beam Deposition experiments: Is it realistic?

1994 ◽  
Vol 64 (10) ◽  
pp. 1212-1214 ◽  
Author(s):  
J. F. Roux ◽  
B. Cabaud ◽  
G. Fuchs ◽  
D. Guillot ◽  
A. Hoareau ◽  
...  
Keyword(s):  
Low Energy ◽  
Mass Selection ◽  
Cluster Beam ◽  
Cluster Beam Deposition ◽  
Energy Cluster ◽  
Selection Of ◽  
Beam Deposition
Sign in / Sign up

Export Citation Format

Share Document