XPS Spectra of Cu Thin Films Prepared by Ionized Cluster Beam Deposition

2012 ◽  
Vol 549 ◽  
pp. 720-723
Author(s):  
Bo Cao ◽  
Tong Rui Yang ◽  
Gong Ping Li ◽  
Seong Jin Cho ◽  
Hee Kim

The Cu thin films were deposited on P type Si (111) substrates by ionized cluster beam (ICB) technique. The surface properties and atomic binding energy of Cu thin films were studied by X-ray Photoelectron Spectroscopy (XPS). The results show that for all XPS spectra of Cu/SiO2/Si (111) samples deposited by neutral cluster and ionized cluster beam (Va=5 kV), the atomic binding energy of the films was no differences with bulk materials. The reason may be that the local energy deposition and atomic restructuring caused by surface treatment process resulting in the XPS spectra of the copper films was similar with bulk standard copper.

1996 ◽  
Vol 68 (16) ◽  
pp. 2192-2194 ◽  
Author(s):  
H. J. Gao ◽  
Z. Q. Xue ◽  
K. Z. Wang ◽  
Q. D. Wu ◽  
S. Pang

1999 ◽  
Vol 581 ◽  
Author(s):  
P. Milanil ◽  
S. Iannotta ◽  
F. Biasioli ◽  
P. Piseri ◽  
E. Barborini

ABSTRACTWe present the characterization of supersonic cluster beam deposition as a viable technique for the synthesis of nanostructured materials. Stable and intense cluster beams can be obtained with a pulsed microplasma cluster source. This technique has been applied to produce TiNi nanostructured thin films on various substrates at room temperature. The morphology and the structure of the film are strongly influenced by the precursor clusters. Films characterized by crystallite sizes of a few tens of nanometers can be grown without recrystallization by thermal annealing. The stoichiometry of the original TiNi alloy is maintained.


1994 ◽  
Vol 349 ◽  
Author(s):  
Zhong-Min Ren ◽  
Yuan-Cheng Du ◽  
Zhi-Feng Ying ◽  
Xia-Xing Xiong ◽  
Mao-Qi He ◽  
...  

ABSTRACTFilms (with thicknesses about thousands A) of a new form of carbon allotrope, CIO also known as Fullerenes, are deposited on Si(111) substrates using ionized cluster beam deposition (ICBD) technique at low (65V) accelerating voltage V. X-ray &-20 diffraction (XRD) have been used to investigate the structural properties of C6Ofi lms, indicating hexagonal close-packed structure with strong (002) XRD assignment together with weak (100), (112) and(004) assignments. Raman spectra, X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) are carried out to make detailed studies of the electronic properties of the films and to illustrate differences between CO films and amorphous carbon films which are deposited by ICBD at high accelerating voltage V >400V. Cio soccer-balls are found to be broken into fragments as accelerating field overtakes about 400V, indicated by the results of XPS, Raman spectra, XRD, and UV/visible absorption spectra.


1982 ◽  
Vol 21 (Part 2, No. 9) ◽  
pp. L551-L552 ◽  
Author(s):  
Yasushi Ohkawa ◽  
Ken'ichi Oki ◽  
Masayuki Wakitani ◽  
Shoshin Miura ◽  
Shozo Umeda

Vacuum ◽  
1990 ◽  
Vol 41 (7-9) ◽  
pp. 1971-1973 ◽  
Author(s):  
M. Koshinaka ◽  
H. Fujii ◽  
K. Nakanishi ◽  
Y. Shibuya

2015 ◽  
Vol 16 (1) ◽  
pp. 13
Author(s):  
Iwan Sugihartono ◽  
Esmar Budi ◽  
Agus Setyo Budi

Undoped ZnO and ZnO:Er  thin films were deposited on p-type Si substrates by ultrasonic spray pyrolisis (USP). Undoped and ZnO:Er thin films have been analyzed by using X-ray Photoelectron Spectroscopy (XPS). The results show that the XPS spectrum has two Er peak at ∼157 eV and ∼168 eV. The XPS Zn 2p spectrum of undoped ZnO and ZnO:Er thin films have binding energy for Zn 2p3/2 (~ 1021 eV) and Zn 2p1/2 (~1045eV) were found no shift in binding energy after the incorporation of Er. Meanwhile, after Er incorporates into ZnO, the O 1s spectrum is composed two peak of binding energy (BE) at ~530.5eV and the shoulder about 532.5 eV.Keywords: ZnO thin films, ZnO:Er, XPS, binding energy


2009 ◽  
pp. 309-309-11
Author(s):  
EM Waddell ◽  
BC Monachan ◽  
KL Lewis ◽  
T Wyatt-Davies ◽  
AM Pitt

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