Growth and Composition of LPCVD Silicon Oxynitride Films

1985 ◽  
Vol 48 ◽  
Author(s):  
F. H. P. M. Habraken ◽  
A. E. T. Kuiper
Keyword(s):  
Chemical Vapour Deposition ◽  
Growth Kinetics ◽  
Vapour Deposition ◽  
Ion Beam ◽  
Chemical Vapour ◽  
Deposition Process ◽  
High Energy ◽  
Silicon Oxynitride ◽  
Chemical Compositions ◽  
Pressure Chemical

ABSTRACTSilicon oxynitride films with various O/N concentration ratios were deposited in a Low Pressure Chemical Vapour Deposition process from SiH2Cl2, N2O and NH3 or ND3. The resulting films were analysed with respect to their chemical compositions using a number of high energy ion beam methods. The results of the analysis are related to the growth kinetics. It is suggested that the SiH2Cl2 decomposes more difficult on growth surfaces which contain more oxygen. The effect is attributed to the larger electronegativity of oxygen compared to nitrogen.

Silicon oxynitride from microwave plasma: fabrication and characterization

1989 ◽  
Vol 67 (4) ◽  
pp. 190-194 ◽  
Author(s):  
S. Blain ◽  
J. E. Klemberg-Sapieha ◽  
M. R. Wertheimer ◽  
S. C. Gujrathi
Keyword(s):  
Chemical Vapour Deposition ◽  
Photoelectron Spectroscopy ◽  
Vapour Deposition ◽  
Microwave Plasma ◽  
Chemical Vapour ◽  
Silicon Oxynitride ◽  
Intrinsic Stress ◽  
Elastic Recoil ◽  
Detection Analysis ◽  
Pressure Chemical

Plasma silicon nitride (P-SiN), oxynitride (P-SiON), and silicon dioxide (P-SiO2) films have been prepared from SiH4–NH3–N2O mixtures in a large volume microwave plasma (LMPR, 2.45 GHz) apparatus at TS = 280 °C. Film compositions, determined by X-ray photoelectron spectroscopy and nuclear elastic recoil detection analysis, reveal about 15 at.% hydrogen in P-SiN, <2% in P-SiO2, and intermediate values in P-SiON. Various physicochemical and electrical properties (density, refractive index, intrinsic stress, permittivity, and conductivity) vary systematically with film composition, O/(O + N), determined from the above analyses. The present microwave plasma enhanced chemical vapour deposition (PECVD) films compare favorably with the best PECVD and low pressure chemical vapour deposition (LPCVD) materials reported in the literature.

Low-pressure chemical vapour deposition of mullite coatings in a cold-wall reactor

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-395-Pr8-402 ◽  
Author(s):  
B. Armas ◽  
M. de Icaza Herrera ◽  
C. Combescure ◽  
F. Sibieude ◽  
D. Thenegal
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Cold Wall ◽  
Pressure Chemical ◽  
Mullite Coatings
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