Silicon oxynitride from microwave plasma: fabrication and characterization

Plasma silicon nitride (P-SiN), oxynitride (P-SiON), and silicon dioxide (P-SiO2) films have been prepared from SiH4–NH3–N2O mixtures in a large volume microwave plasma (LMPR, 2.45 GHz) apparatus at TS = 280 °C. Film compositions, determined by X-ray photoelectron spectroscopy and nuclear elastic recoil detection analysis, reveal about 15 at.% hydrogen in P-SiN, <2% in P-SiO2, and intermediate values in P-SiON. Various physicochemical and electrical properties (density, refractive index, intrinsic stress, permittivity, and conductivity) vary systematically with film composition, O/(O + N), determined from the above analyses. The present microwave plasma enhanced chemical vapour deposition (PECVD) films compare favorably with the best PECVD and low pressure chemical vapour deposition (LPCVD) materials reported in the literature.

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An X-ray photoelectron spectroscopy study of the surface layers between diamond crystallites and silicon substrate deposited by microwave-plasma-assisted chemical vapour deposition

Diamond and Related Materials ◽

10.1016/0925-9635(93)90120-q ◽

1993 ◽

Vol 2 (2-4) ◽

pp. 558-561 ◽

Cited By ~ 5

Author(s):

S. Haq ◽

C. Somerton ◽

D. Tunnicliffe ◽

J.A. Savage ◽

P. John ◽

...

Keyword(s):

Chemical Vapour Deposition ◽

Silicon Substrate ◽

Photoelectron Spectroscopy ◽

Vapour Deposition ◽

Microwave Plasma ◽

Chemical Vapour ◽

Spectroscopy Study ◽

Surface Layers ◽

X Ray

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Electrical characterisation of thin silicon oxynitride films deposited by low pressure chemical vapour deposition

Thin Solid Films ◽

10.1016/s0040-6090(99)00650-1 ◽

1999 ◽

Vol 354 (1-2) ◽

pp. 9-12 ◽

Cited By ~ 20

Author(s):

B. Hajji ◽

P. Temple-Boyer ◽

F. Olivié ◽

A. Martinez

Keyword(s):

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Low Pressure ◽

Silicon Oxynitride ◽

Pressure Chemical ◽

Thin Silicon

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A Comparison of the Surface Properties of DLC and Nanocrystalline Diamond

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.336-338.1776 ◽

2007 ◽

Vol 336-338 ◽

pp. 1776-1779

Author(s):

Chong Mu Lee ◽

Kyung Ha Kim

Keyword(s):

Chemical Vapour Deposition ◽

Amorphous Carbon ◽

Photoelectron Spectroscopy ◽

Vapour Deposition ◽

Microwave Plasma ◽

Diamond Films ◽

Chemical Vapour ◽

Scanning Force Microscopy ◽

Nanocrystalline Diamond ◽

Hard Coatings

Diamond-like carbon (DLC) films have been deposited by radio frequency plasma enhanced chemical vapour deposition (rf-PECVD) with different Ar-CH4 mixtures. Nanocrystalline diamond films have been deposited by microwave plasma-enhanced chemical vapour deposition (MPCVD), using Ar-H2-CH4 mixtures. X-ray photoelectron spectroscopy (XPS) and nanotribological investigation (by scanning force microscopy) have been used to compare the mechanical properties and structures of these films. Highly orientated and non-orientated microcrystalline diamond films and MPCVD-produced amorphous carbon have also been studied by way of comparison. The diamond films exhibit a linear relationship between roughness and the coefficient of friction. The DLC and amorphous carbon have higher friction coefficients than the best performing diamond film, but may more easily be deposited as smooth coating. Possible applications for these various carbon-based films include microelectromechanical components, for which smooth, hard coatings are required.

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Growth and Composition of LPCVD Silicon Oxynitride Films

MRS Proceedings ◽

10.1557/proc-48-395 ◽

1985 ◽

Vol 48 ◽

Cited By ~ 2

Author(s):

F. H. P. M. Habraken ◽

A. E. T. Kuiper

Keyword(s):

Chemical Vapour Deposition ◽

Growth Kinetics ◽

Vapour Deposition ◽

Ion Beam ◽

Chemical Vapour ◽

Deposition Process ◽

High Energy ◽

Silicon Oxynitride ◽

Chemical Compositions ◽

Pressure Chemical

ABSTRACTSilicon oxynitride films with various O/N concentration ratios were deposited in a Low Pressure Chemical Vapour Deposition process from SiH2Cl2, N2O and NH3 or ND3. The resulting films were analysed with respect to their chemical compositions using a number of high energy ion beam methods. The results of the analysis are related to the growth kinetics. It is suggested that the SiH2Cl2 decomposes more difficult on growth surfaces which contain more oxygen. The effect is attributed to the larger electronegativity of oxygen compared to nitrogen.

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