Wide Gan Stripes by Lateral Growth in Metalorganic Vapor Phase Epitaxy
Keyword(s):
AbstractWe investigated the growth conditions for enhancing epitaxial lateral overgrowth (ELO) of GaN stripes selectively grown by low-pressure metalorganic vapor phase epitaxy. The ELO was enhanced for GaN <1100> stripes and with a small trimethylgallium flow-rate. This tendency did not depend on mask materials. The cross-sectional shape of the GaN <1100> stripes was trapezoidal for SiO2 masks, and rectangular for silicon nitride (SiN2) masks in a certain growth condition. A low dislocation density in the ELO region was obtained not only for the SiO2 masks but also for the SiN2 masks.
1999 ◽
Vol 4
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pp. 118-123
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1999 ◽
Vol 176
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pp. 561-565
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1999 ◽
Vol 59
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pp. 104-111
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1998 ◽
Vol 189-190
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pp. 78-82
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